High Linearity Cellular-Band MMIC Mixer

Product Description The MH205A is a passive GaAs MESFET mixer that provides high dynamic range performance in a low-cost lead-free/green/RoHS-compliant SOIC-8 package. WJ’s MH205A uses patented techniques to realize +35 dBm Input IP3 at an LO drive level of +17 dBm and can be used for upconvertin

High Linearity Cellular-Band MMIC Mixer

文件：192.45 Kbytes Page：4 Pages

Lightning Surge Protectors for Electronics Equipment M-RESTER

文件：106.75 Kbytes Page：3 Pages

High Linearity Cellular-Band MMIC Mixer

Product Description The MH205A is a passive GaAs MESFET mixer that provides high dynamic range performance in a low-cost lead-free/green/RoHS-compliant SOIC-8 package. WJ’s MH205A uses patented techniques to realize +35 dBm Input IP3 at an LO drive level of +17 dBm and can be used for upconvertin

High Linearity Cellular-Band MMIC Mixer

Product Description The MH205A is a passive GaAs MESFET mixer that provides high dynamic range performance in a low-cost lead-free/green/RoHS-compliant SOIC-8 package. WJ’s MH205A uses patented techniques to realize +35 dBm Input IP3 at an LO drive level of +17 dBm and can be used for upconvertin

High Linearity Cellular-Band MMIC Mixer

文件：192.45 Kbytes Page：4 Pages

High Linearity Cellular-Band MMIC Mixer

文件：192.45 Kbytes Page：4 Pages

High Linearity Cellular-Band MMIC Mixer

High Linearity Cellular-Band MMIC Mixer

文件：192.45 Kbytes Page：4 Pages

N-channel enhancement mode vertical D-MOS transistor

DESCRIPTION N-channel enhancement mode vertical D-MOS transistor in a SOT223 envelope, intended for use as a line current interruptor in telephone sets and for applications in relay, high-speed and line transformer drivers. FEATURES • Direct interface to C-MOS, TTL, etc. • High-speed switching

POWER TRANSISTORS(2.5A,1300-1500V,36W)

HORIZONTAL DEFLECTION TRANSISTOR 2.5 AMPERE POWER TRANSISTORS 1300-1500 VOLTS 36 WATTS

SMALL OUTLINE OPTOISOLATORS TRANSISTOR OUTPUT

These devices consist of a gallium arsenide infrared emitting diode optically coupled to a monolithic silicon phototransistor detector, in a surface mountable, small outline, plastic package. They are ideally suited for high density applications, and eliminate the need for through–the–board mounti

SCHOTTKY BARRIER RECTIFIERS(2.0A,20-60V)

Using the Schottky Barrier principle with a Molybdenum barrier metal. These state-of-the-art geometry features epitaxial construction with oxide passivation and metal overly contact. Ideally suited for low voltage, high frequency rectification, or as free wheeling and polarity protection diodes.

Alternate Source/ Second Source Photodiodes

PRODUCT DESCRIPTION Large area planar silicon photodiode in a waterclear, cast epoxy sidelooker, similar in outline to the TO-92 package. These diodes exhibit low dark current under reverse bias and fast speed of response.