SMALL OUTLINE OPTOISOLATORS TRANSISTOR OUTPUT

These devices consist of a gallium arsenide infrared emitting diode optically coupled to a monolithic silicon phototransistor detector, in a surface mountable, small outline, plastic package. They are ideally suited for high density applications, and eliminate the need for through–the–board mounti

SMALL OUTLINE OPTOCOUPLERS TRANSISTOR OUTPUT

DESCRIPTION These devices consist of a gallium arsenide infrared emitting diode optically coupled to a monolithic silicon phototransistor detector, in a surface mountable, small outline, plastic package. They are ideally suited for high density applications, and eliminate the need for through - t

SMALL OUTLINE OPTICALLY COUPLED ISOLATOR TRANSISTOR OUTPUT

DESCRIPTION\nThis series of optically coupled isolators consist of a Gallium Arsenide infrared emitting diode and NPN silicon photo transistor mounted in a standard 8 pin SOIC package,which makes them ideally suited for high density applications with limited space.FEATURES\n● Standard SOIC-8 Footpri ● Standard SOIC-8 Footprint with 0.05\" Lead Spacin\n● Specified min. and max. CTR at 10mA IF , 10V VCE\n   MOC205 , 40 - 80%\n   MOC206 , 63 - 125%\n   MOC207 , 100 - 200%\n   MOC208 , 160 - 320%\n● Specified minimum CTR at 10mA IF , 10V VCE\n   MOC211 , 20%\n   MOC212 , 50%;

SMALL OUTLINE OPTOCOUPLERS TRANSISTOR OUTPUT

SMALL OUTLINE OPTOISOLATORS TRANSISTOR OUTPUT

8-pin SOIC Single-Channel Phototransistor Output Optocoupler

Features • Closely Matched Current Transfer Ratios • Minimum BVCEO of 70 V Guaranteed – MOC205M, MOC206M, MOC207M • Minimum BVCEO of 30 V Guaranteed – MOC211M, MOC212M, MOC213M, MOC216M, MOC217M • Low LED Input Current Required for Easier Logic Interfacing – MOC216M, MOC217M • Convenient P

Small Outline Optocouplers Transistor Output

Description These devices consist of a gallium arsenide infrared emitting diode optically coupled to a monolithic silicon phototransistor detector, in a surface mountable, small outline, plastic package. They are ideally suited for high-density applications, and eliminate the need for through-the

SMALL OUTLINE OPTOCOUPLERS TRANSISTOR OUTPUT

DESCRIPTION These devices consist of a gallium arsenide infrared emitting diode optically coupled to a monolithic silicon phototransistor detector, in a surface mountable, small outline, plastic package. They are ideally suited for high density applications, and eliminate the need for through - t

SMALL OUTLINE OPTOCOUPLERS TRANSISTOR OUTPUT

DESCRIPTION These devices consist of a gallium arsenide infrared emitting diode optically coupled to a monolithic silicon phototransistor detector, in a surface mountable, small outline, plastic package. They are ideally suited for high density applications, and eliminate the need for through - t

8-pin SOIC Single-Channel Phototransistor Output Optocoupler

Features • Closely Matched Current Transfer Ratios • Minimum BVCEO of 70 V Guaranteed – MOC205M, MOC206M, MOC207M • Minimum BVCEO of 30 V Guaranteed – MOC211M, MOC212M, MOC213M, MOC216M, MOC217M • Low LED Input Current Required for Easier Logic Interfacing – MOC216M, MOC217M • Convenient P

8-pin SOIC Single-Channel Phototransistor Output Optocoupler

Features • Closely Matched Current Transfer Ratios • Minimum BVCEO of 70 V Guaranteed – MOC205M, MOC206M, MOC207M • Minimum BVCEO of 30 V Guaranteed – MOC211M, MOC212M, MOC213M, MOC216M, MOC217M • Low LED Input Current Required for Easier Logic Interfacing – MOC216M, MOC217M • Convenient P

8-pin SOIC Single-Channel Phototransistor Output Optocoupler

Features • Closely Matched Current Transfer Ratios • Minimum BVCEO of 70 V Guaranteed – MOC205M, MOC206M, MOC207M • Minimum BVCEO of 30 V Guaranteed – MOC211M, MOC212M, MOC213M, MOC216M, MOC217M • Low LED Input Current Required for Easier Logic Interfacing – MOC216M, MOC217M • Convenient P

Small Outline Optocouplers Transistor Output

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N-channel enhancement mode vertical D-MOS transistor

DESCRIPTION N-channel enhancement mode vertical D-MOS transistor in a SOT223 envelope, intended for use as a line current interruptor in telephone sets and for applications in relay, high-speed and line transformer drivers. FEATURES • Direct interface to C-MOS, TTL, etc. • High-speed switching

POWER TRANSISTORS(2.5A,1300-1500V,36W)

HORIZONTAL DEFLECTION TRANSISTOR 2.5 AMPERE POWER TRANSISTORS 1300-1500 VOLTS 36 WATTS

SCHOTTKY BARRIER RECTIFIERS(2.0A,20-60V)

Using the Schottky Barrier principle with a Molybdenum barrier metal. These state-of-the-art geometry features epitaxial construction with oxide passivation and metal overly contact. Ideally suited for low voltage, high frequency rectification, or as free wheeling and polarity protection diodes.

Alternate Source/ Second Source Photodiodes

PRODUCT DESCRIPTION Large area planar silicon photodiode in a waterclear, cast epoxy sidelooker, similar in outline to the TO-92 package. These diodes exhibit low dark current under reverse bias and fast speed of response.