Using the Schottky Barrier principle with a Molybdenum barrier metal. These state-of-the-art geometry features epitaxial construction with oxide passivation and metal overly contact. Ideally suited for low voltage, high frequency rectification, or as free wheeling and polarity protection diodes.

Features

* Low Forward Voltag.

* Low Switching noise.

* High current capacity

* Guarantee Reverse Avalance.

* Guard-Ring for Stress Protection.

* Low Power Loss & High efficiency.

* 150 °C Operating Junction Temperature.

* Low Stored Charge Majority Carrier Conduction.

* Plastic Material used Carries Underwriters Laboratory

Flammability Classification 94V-O