Alternate Source/ Second Source Photodiodes

PRODUCT DESCRIPTION Large area planar silicon photodiode in a waterclear, cast epoxy sidelooker, similar in outline to the TO-92 package. These diodes exhibit low dark current under reverse bias and fast speed of response.

工业标准硅光电二极管

此硅光电二极管的感光面积为7.41 mm2，设计用于400 nm至1100 nm之间的光谱响应。\n\n我们的VTD系列光电二极管在众多应用中被用作同类竞争设备的替代品。此系列光电二极管在反向偏压下具有较弱的暗电流，并可提供快速响应。\n\n功能与优点：\n\n可见光至IR光谱范围\n\n峰值波长：925 nm\n\n中等感光面积\n\n低暗电流\n\n快速响应\n\n符合RoHS标准\n\n应用领域：\n\n硬币清点机\n\n汽车 • 感光面积=7.41mm2• 短路电流 = 最小值50 µA（1000 Lux，2850 K）• 暗电流=在10V反向偏压时，最大值为30nA• 结电容 = 典型值72 pF（偏压为0V时）• 上升/下降时间 = 典型值20 ns（50 Ω负载，5 V反向偏压，850 nm）• 光谱范围 = 400 nm至1100 nm• 峰值光谱响应=925 nm• 峰值波长的灵敏度=通常为0,60A/W• 角响应=50%响应时成±60度，;

N-channel enhancement mode vertical D-MOS transistor

DESCRIPTION N-channel enhancement mode vertical D-MOS transistor in a SOT223 envelope, intended for use as a line current interruptor in telephone sets and for applications in relay, high-speed and line transformer drivers. FEATURES • Direct interface to C-MOS, TTL, etc. • High-speed switching

POWER TRANSISTORS(2.5A,1300-1500V,36W)

HORIZONTAL DEFLECTION TRANSISTOR 2.5 AMPERE POWER TRANSISTORS 1300-1500 VOLTS 36 WATTS

SMALL OUTLINE OPTOISOLATORS TRANSISTOR OUTPUT

These devices consist of a gallium arsenide infrared emitting diode optically coupled to a monolithic silicon phototransistor detector, in a surface mountable, small outline, plastic package. They are ideally suited for high density applications, and eliminate the need for through–the–board mounti

SCHOTTKY BARRIER RECTIFIERS(2.0A,20-60V)

Using the Schottky Barrier principle with a Molybdenum barrier metal. These state-of-the-art geometry features epitaxial construction with oxide passivation and metal overly contact. Ideally suited for low voltage, high frequency rectification, or as free wheeling and polarity protection diodes.