MC14049价格

参考价格:¥0.5889

型号:MC14049BDG 品牌:ON 备注:这里有MC14049多少钱,2025年最近7天走势,今日出价,今日竞价,MC14049批发/采购报价,MC14049行情走势销售排行榜,MC14049报价。
型号 功能描述 生产厂家 企业 LOGO 操作
MC14049

Hex Buffer

The MC14049B Hex Inverter/Buffer and MC14050B Noninverting Hex Buffer are constructed with MOS P–Channel and N–Channel enhancement mode devices in a single monolithic structure. These complementary MOS devices find primary use where low power dissipation and/or high noise immunity is desired. Thes

ONSEMI

安森美半导体

Hex Buffer

The MC14049B Hex Inverter/Buffer and MC14050B Noninverting Hex Buffer are constructed with MOS P–Channel and N–Channel enhancement mode devices in a single monolithic structure. These complementary MOS devices find primary use where low power dissipation and/or high noise immunity is desired. Thes

ONSEMI

安森美半导体

Hex Buffer

The MC14049B Hex Inverter/Buffer and MC14050B Noninverting Hex Buffer are constructed with MOS P−Channel and N−Channel enhancement mode devices in a single monolithic structure. These complementary MOS devices find primary use where low power dissipation and/or high noise immunity is desired.

ONSEMI

安森美半导体

Hex Buffer

The MC14049B Hex Inverter/Buffer and MC14050B Noninverting Hex Buffer are constructed with MOS P−Channel and N−Channel enhancement mode devices in a single monolithic structure. These complementary MOS devices find primary use where low power dissipation and/or high noise immunity is desired.

ONSEMI

安森美半导体

Hex Buffer

The MC14049B Hex Inverter/Buffer and MC14050B Noninverting Hex Buffer are constructed with MOS P–Channel and N–Channel enhancement mode devices in a single monolithic structure. These complementary MOS devices find primary use where low power dissipation and/or high noise immunity is desired. Thes

ONSEMI

安森美半导体

Hex Buffer

The MC14049B Hex Inverter/Buffer and MC14050B Noninverting Hex Buffer are constructed with MOS P–Channel and N–Channel enhancement mode devices in a single monolithic structure. These complementary MOS devices find primary use where low power dissipation and/or high noise immunity is desired. Thes

ONSEMI

安森美半导体

Hex Buffer

The MC14049B Hex Inverter/Buffer and MC14050B Noninverting Hex Buffer are constructed with MOS P–Channel and N–Channel enhancement mode devices in a single monolithic structure. These complementary MOS devices find primary use where low power dissipation and/or high noise immunity is desired. Thes

ONSEMI

安森美半导体

Hex Buffer

The MC14049B Hex Inverter/Buffer and MC14050B Noninverting Hex Buffer are constructed with MOS P–Channel and N–Channel enhancement mode devices in a single monolithic structure. These complementary MOS devices find primary use where low power dissipation and/or high noise immunity is desired. Thes

ONSEMI

安森美半导体

Hex Buffer

The MC14049B Hex Inverter/Buffer and MC14050B Noninverting Hex Buffer are constructed with MOS P−Channel and N−Channel enhancement mode devices in a single monolithic structure. These complementary MOS devices find primary use where low power dissipation and/or high noise immunity is desired.

ONSEMI

安森美半导体

Hex Buffer

The MC14049B Hex Inverter/Buffer and MC14050B Noninverting Hex Buffer are constructed with MOS P–Channel and N–Channel enhancement mode devices in a single monolithic structure. These complementary MOS devices find primary use where low power dissipation and/or high noise immunity is desired. Thes

ONSEMI

安森美半导体

Hex Buffer

The MC14049B Hex Inverter/Buffer and MC14050B Noninverting Hex Buffer are constructed with MOS P–Channel and N–Channel enhancement mode devices in a single monolithic structure. These complementary MOS devices find primary use where low power dissipation and/or high noise immunity is desired. Thes

ONSEMI

安森美半导体

Hex Buffer

The MC14049B Hex Inverter/Buffer and MC14050B Noninverting Hex Buffer are constructed with MOS P−Channel and N−Channel enhancement mode devices in a single monolithic structure. These complementary MOS devices find primary use where low power dissipation and/or high noise immunity is desired.

ONSEMI

安森美半导体

Hex Buffer

The MC14049B Hex Inverter/Buffer and MC14050B Noninverting Hex Buffer are constructed with MOS P–Channel and N–Channel enhancement mode devices in a single monolithic structure. These complementary MOS devices find primary use where low power dissipation and/or high noise immunity is desired. Thes

ONSEMI

安森美半导体

Hex Buffers

The MC14049UB hex inverter/buffer is constructed with MOS P−channel and N−channel enhancement mode devices in a single monolithic structure. This complementary MOS device finds primary use where low power dissipation and/or high noise immunity is desired. This device provides logic−level conversio

ONSEMI

安森美半导体

Hex Buffers

The MC14049UB hex inverter/buffer is constructed with MOS P−channel and N−channel enhancement mode devices in a single monolithic structure. This complementary MOS device finds primary use where low power dissipation and/or high noise immunity is desired. This device provides logic−level conve

ONSEMI

安森美半导体

Hex Buffers

The MC14049UB hex inverter/buffer is constructed with MOS P−channel and N−channel enhancement mode devices in a single monolithic structure. This complementary MOS device finds primary use where low power dissipation and/or high noise immunity is desired. This device provides logic−level conve

ONSEMI

安森美半导体

Hex Buffers

The MC14049UB hex inverter/buffer is constructed with MOS P−channel and N−channel enhancement mode devices in a single monolithic structure. This complementary MOS device finds primary use where low power dissipation and/or high noise immunity is desired. This device provides logic−level conversio

ONSEMI

安森美半导体

Hex Buffers

The MC14049UB hex inverter/buffer is constructed with MOS P−channel and N−channel enhancement mode devices in a single monolithic structure. This complementary MOS device finds primary use where low power dissipation and/or high noise immunity is desired. This device provides logic−level conversio

ONSEMI

安森美半导体

Hex Buffers

The MC14049UB hex inverter/buffer is constructed with MOS P−channel and N−channel enhancement mode devices in a single monolithic structure. This complementary MOS device finds primary use where low power dissipation and/or high noise immunity is desired. This device provides logic−level conve

ONSEMI

安森美半导体

Hex Buffers

The MC14049UB hex inverter/buffer is constructed with MOS P−channel and N−channel enhancement mode devices in a single monolithic structure. This complementary MOS device finds primary use where low power dissipation and/or high noise immunity is desired. This device provides logic−level conversio

ONSEMI

安森美半导体

Hex Buffers

The MC14049UB hex inverter/buffer is constructed with MOS P−channel and N−channel enhancement mode devices in a single monolithic structure. This complementary MOS device finds primary use where low power dissipation and/or high noise immunity is desired. This device provides logic−level conve

ONSEMI

安森美半导体

Hex Buffers

The MC14049UB hex inverter/buffer is constructed with MOS P−channel and N−channel enhancement mode devices in a single monolithic structure. This complementary MOS device finds primary use where low power dissipation and/or high noise immunity is desired. This device provides logic−level conversio

ONSEMI

安森美半导体

Hex Buffers

The MC14049UB hex inverter/buffer is constructed with MOS P−channel and N−channel enhancement mode devices in a single monolithic structure. This complementary MOS device finds primary use where low power dissipation and/or high noise immunity is desired. This device provides logic−level conversio

ONSEMI

安森美半导体

Hex Buffers

The MC14049UB hex inverter/buffer is constructed with MOS P−channel and N−channel enhancement mode devices in a single monolithic structure. This complementary MOS device finds primary use where low power dissipation and/or high noise immunity is desired. This device provides logic−level conve

ONSEMI

安森美半导体

Hex Buffers

The MC14049UB hex inverter/buffer is constructed with MOS P−channel and N−channel enhancement mode devices in a single monolithic structure. This complementary MOS device finds primary use where low power dissipation and/or high noise immunity is desired. This device provides logic−level conversio

ONSEMI

安森美半导体

Hex Buffers

The MC14049UB hex inverter/buffer is constructed with MOS P−channel and N−channel enhancement mode devices in a single monolithic structure. This complementary MOS device finds primary use where low power dissipation and/or high noise immunity is desired. This device provides logic−level conversio

ONSEMI

安森美半导体

六路逆变器

ONSEMI

安森美半导体

Hex Buffer

文件:131.31 Kbytes Page:8 Pages

ONSEMI

安森美半导体

Hex Buffer

文件:156.13 Kbytes Page:9 Pages

ONSEMI

安森美半导体

Hex Buffer

文件:148.25 Kbytes Page:9 Pages

ONSEMI

安森美半导体

Hex Buffer

文件:131.31 Kbytes Page:8 Pages

ONSEMI

安森美半导体

MC14049, MC14050 / Hex buffer

ETC

知名厂家

Hex Buffer

文件:148.25 Kbytes Page:9 Pages

ONSEMI

安森美半导体

Hex Buffer

文件:131.31 Kbytes Page:8 Pages

ONSEMI

安森美半导体

Hex Buffer

文件:148.25 Kbytes Page:9 Pages

ONSEMI

安森美半导体

封装/外壳:16-SOIC(0.154",3.90mm 宽) 包装:卷带(TR)剪切带(CT)Digi-Reel® 得捷定制卷带 描述:IC INVERTER 6CH 1-INP 16SOIC 集成电路(IC) 门和反相器

ONSEMI

安森美半导体

封装/外壳:16-SOIC(0.154",3.90mm 宽) 包装:卷带(TR)剪切带(CT)Digi-Reel® 得捷定制卷带 描述:IC INVERTER 6CH 1-INP 16SOIC 集成电路(IC) 门和反相器

ONSEMI

安森美半导体

Hex Buffer

文件:148.25 Kbytes Page:9 Pages

ONSEMI

安森美半导体

Hex Buffer

文件:131.31 Kbytes Page:8 Pages

ONSEMI

安森美半导体

Hex Buffer

文件:148.25 Kbytes Page:9 Pages

ONSEMI

安森美半导体

Hex Buffer

文件:131.31 Kbytes Page:8 Pages

ONSEMI

安森美半导体

Hex Buffers

文件:155.8 Kbytes Page:8 Pages

ONSEMI

安森美半导体

Hex Buffers

文件:107 Kbytes Page:7 Pages

ONSEMI

安森美半导体

Hex Buffers

文件:106.84 Kbytes Page:7 Pages

ONSEMI

安森美半导体

六路逆变器

ONSEMI

安森美半导体

W Semiconductor Components Industries, LLC, 2004

文件:113.31 Kbytes Page:8 Pages

ONSEMI

安森美半导体

W Semiconductor Components Industries, LLC, 2004

文件:113.31 Kbytes Page:8 Pages

ONSEMI

安森美半导体

Hex Buffers

文件:107 Kbytes Page:7 Pages

ONSEMI

安森美半导体

Hex Buffers

文件:106.84 Kbytes Page:7 Pages

ONSEMI

安森美半导体

W Semiconductor Components Industries, LLC, 2004

文件:113.31 Kbytes Page:8 Pages

ONSEMI

安森美半导体

W Semiconductor Components Industries, LLC, 2004

文件:113.31 Kbytes Page:8 Pages

ONSEMI

安森美半导体

Hex Buffers

文件:155.8 Kbytes Page:8 Pages

ONSEMI

安森美半导体

W Semiconductor Components Industries, LLC, 2004

文件:113.31 Kbytes Page:8 Pages

ONSEMI

安森美半导体

W Semiconductor Components Industries, LLC, 2004

文件:113.31 Kbytes Page:8 Pages

ONSEMI

安森美半导体

Hex Buffers

文件:155.8 Kbytes Page:8 Pages

ONSEMI

安森美半导体

Hex Buffers

文件:107 Kbytes Page:7 Pages

ONSEMI

安森美半导体

Hex Buffers

文件:106.84 Kbytes Page:7 Pages

ONSEMI

安森美半导体

W Semiconductor Components Industries, LLC, 2004

文件:113.31 Kbytes Page:8 Pages

ONSEMI

安森美半导体

W Semiconductor Components Industries, LLC, 2004

文件:113.31 Kbytes Page:8 Pages

ONSEMI

安森美半导体

Hex Buffers

文件:107 Kbytes Page:7 Pages

ONSEMI

安森美半导体

替换型号 功能描述 生产厂家 企业 LOGO 操作

CMOS HEX BUFFERS/CONVERTERS

TI

德州仪器

CMOS HEX BUFFERS/CONVERTERS

TI

德州仪器

CMOS HEX BUFFERS/CONVERTERS

TI

德州仪器

CMOS Hex Buffer/Converters

HARRIS

CMOS HEX BUFFERS/CONVERTERS

TI

德州仪器

CMOS Hex Buffer/Converters

HARRIS

CMOS HEX BUFFERS/CONVERTERS

TI

德州仪器

Hex Inverter/Buffer

HitachiHitachi Semiconductor

日立日立公司

Hex inverting buffers

ETC

C-2MOS DIGITAL INTEGRATED CIRCUIT SILICON MONOLITHIC

ETC1

Hex Buffer/Converter

TOSHIBA

东芝

HEX BUFFER/CONVERTER (INVERTING TYPE, NON-INVERTING TYPE)

TOSHIBA

东芝

MC14049产品属性

  • 类型

    描述

  • 型号

    MC14049

  • 制造商

    ONSEMI

  • 制造商全称

    ON Semiconductor

  • 功能描述

    Hex Buffer

更新时间:2025-11-3 23:00:00
IC供应商 芯片型号 品牌 批号 封装 库存 备注 价格
ON(安森美)
24+
标准封装
31048
全新原装正品/价格优惠/质量保障
ON
2016+
DIP16
3500
只做原装,假一罚十,公司可开17%增值税发票!
ONSEMI/安森美
25+
SOP16
32000
ONSEMI/安森美全新特价MC14049UBDR2G即刻询购立享优惠#长期有货
ON/安森美
23+
SOP16
2000
ON
25+
750
公司原装现货常备库存!
ON(安森美)
23+
14437
公司只做原装正品,假一赔十
ON(安森美)
23+
NA
20094
正纳10年以上分销经验原装进口正品做服务做口碑有支持
ON
24+
SO-16
10000
一级代理进口原装现货假一赔十
MOT
23+
NA
549
专做原装正品,假一罚百!
MOTOROLA/摩托罗拉
22+
CDIP
12245
现货,原厂原装假一罚十!

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