Hex Buffer

The MC14049B Hex Inverter/Buffer and MC14050B Noninverting Hex Buffer are constructed with MOS P–Channel and N–Channel enhancement mode devices in a single monolithic structure. These complementary MOS devices find primary use where low power dissipation and/or high noise immunity is desired. Thes

Hex Buffer

The MC14049B Hex Inverter/Buffer and MC14050B Noninverting Hex Buffer are constructed with MOS P–Channel and N–Channel enhancement mode devices in a single monolithic structure. These complementary MOS devices find primary use where low power dissipation and/or high noise immunity is desired. Thes

Hex Buffer

The MC14049B Hex Inverter/Buffer and MC14050B Noninverting Hex Buffer are constructed with MOS P−Channel and N−Channel enhancement mode devices in a single monolithic structure. These complementary MOS devices find primary use where low power dissipation and/or high noise immunity is desired.

六路逆变器

The MC14049B Hex Inverter/Buffer and MC14050B Noninverting Hex Buffer are constructed with MOS P-Channel and N-Channel enhancement mode devices in a single monolithic structure. These complementary MOS devices find primary use where low power dissipation and/or high noise immunity is desired. These • High Source and Sink Currents\n• High-to-Low Level Converter\n• Supply Voltage Range = 3.0 V to 18 V\n• VIN can exceed VDD\n• Meets JEDEC B Specifications\n• Improved ESD Protection On All Inputs\n• Pb-Free Packages are Available*;

Hex Buffer

The MC14049B Hex Inverter/Buffer and MC14050B Noninverting Hex Buffer are constructed with MOS P−Channel and N−Channel enhancement mode devices in a single monolithic structure. These complementary MOS devices find primary use where low power dissipation and/or high noise immunity is desired.

MC14049, MC14050 / Hex buffer

Hex Buffer

The MC14049B Hex Inverter/Buffer and MC14050B Noninverting Hex Buffer are constructed with MOS P–Channel and N–Channel enhancement mode devices in a single monolithic structure. These complementary MOS devices find primary use where low power dissipation and/or high noise immunity is desired. Thes

Hex Buffer

The MC14049B Hex Inverter/Buffer and MC14050B Noninverting Hex Buffer are constructed with MOS P–Channel and N–Channel enhancement mode devices in a single monolithic structure. These complementary MOS devices find primary use where low power dissipation and/or high noise immunity is desired. Thes

Hex Buffer

The MC14049B Hex Inverter/Buffer and MC14050B Noninverting Hex Buffer are constructed with MOS P–Channel and N–Channel enhancement mode devices in a single monolithic structure. These complementary MOS devices find primary use where low power dissipation and/or high noise immunity is desired. Thes

Hex Buffer

The MC14049B Hex Inverter/Buffer and MC14050B Noninverting Hex Buffer are constructed with MOS P–Channel and N–Channel enhancement mode devices in a single monolithic structure. These complementary MOS devices find primary use where low power dissipation and/or high noise immunity is desired. Thes

Hex Buffer

The MC14049B Hex Inverter/Buffer and MC14050B Noninverting Hex Buffer are constructed with MOS P−Channel and N−Channel enhancement mode devices in a single monolithic structure. These complementary MOS devices find primary use where low power dissipation and/or high noise immunity is desired.

Hex Buffer

The MC14049B Hex Inverter/Buffer and MC14050B Noninverting Hex Buffer are constructed with MOS P–Channel and N–Channel enhancement mode devices in a single monolithic structure. These complementary MOS devices find primary use where low power dissipation and/or high noise immunity is desired. Thes

Hex Buffer

The MC14049B Hex Inverter/Buffer and MC14050B Noninverting Hex Buffer are constructed with MOS P–Channel and N–Channel enhancement mode devices in a single monolithic structure. These complementary MOS devices find primary use where low power dissipation and/or high noise immunity is desired. Thes

Hex Buffer

The MC14049B Hex Inverter/Buffer and MC14050B Noninverting Hex Buffer are constructed with MOS P−Channel and N−Channel enhancement mode devices in a single monolithic structure. These complementary MOS devices find primary use where low power dissipation and/or high noise immunity is desired.

Hex Buffer

The MC14049B Hex Inverter/Buffer and MC14050B Noninverting Hex Buffer are constructed with MOS P–Channel and N–Channel enhancement mode devices in a single monolithic structure. These complementary MOS devices find primary use where low power dissipation and/or high noise immunity is desired. Thes

Hex Buffers

The MC14049UB hex inverter/buffer is constructed with MOS P−channel and N−channel enhancement mode devices in a single monolithic structure. This complementary MOS device finds primary use where low power dissipation and/or high noise immunity is desired. This device provides logic−level conversio

Hex Buffers

The MC14049UB hex inverter/buffer is constructed with MOS P−channel and N−channel enhancement mode devices in a single monolithic structure. This complementary MOS device finds primary use where low power dissipation and/or high noise immunity is desired. This device provides logic−level conve

六路逆变器

The MC14049UB hex inverter buffer is constructed with MOS P channel and N channel enhancement mode devices in a single monolithic structure.This complementary MOS device finds primaryuse where low power dissipation and or high noise immunity is desired. This device provides logic level conversion us • High Source and Sink Currents\n• High-to-Low Level Converter\n• Supply Voltage Range = 3.0 V to 18 V\n• Meets JEDEC UB Specifications\n• VIN can exceed VDD\n• Improved ESD Protection on All Inputs\n• Pb-Free Packages are Available*;

Hex Buffers

The MC14049UB hex inverter/buffer is constructed with MOS P−channel and N−channel enhancement mode devices in a single monolithic structure. This complementary MOS device finds primary use where low power dissipation and/or high noise immunity is desired. This device provides logic−level conve

Hex Buffers

The MC14049UB hex inverter/buffer is constructed with MOS P−channel and N−channel enhancement mode devices in a single monolithic structure. This complementary MOS device finds primary use where low power dissipation and/or high noise immunity is desired. This device provides logic−level conversio

Hex Buffers

The MC14049UB hex inverter/buffer is constructed with MOS P−channel and N−channel enhancement mode devices in a single monolithic structure. This complementary MOS device finds primary use where low power dissipation and/or high noise immunity is desired. This device provides logic−level conversio

Hex Buffers

The MC14049UB hex inverter/buffer is constructed with MOS P−channel and N−channel enhancement mode devices in a single monolithic structure. This complementary MOS device finds primary use where low power dissipation and/or high noise immunity is desired. This device provides logic−level conve

Hex Buffers

The MC14049UB hex inverter/buffer is constructed with MOS P−channel and N−channel enhancement mode devices in a single monolithic structure. This complementary MOS device finds primary use where low power dissipation and/or high noise immunity is desired. This device provides logic−level conversio

Hex Buffers

The MC14049UB hex inverter/buffer is constructed with MOS P−channel and N−channel enhancement mode devices in a single monolithic structure. This complementary MOS device finds primary use where low power dissipation and/or high noise immunity is desired. This device provides logic−level conve

Hex Buffers

The MC14049UB hex inverter/buffer is constructed with MOS P−channel and N−channel enhancement mode devices in a single monolithic structure. This complementary MOS device finds primary use where low power dissipation and/or high noise immunity is desired. This device provides logic−level conversio

Hex Buffers

The MC14049UB hex inverter/buffer is constructed with MOS P−channel and N−channel enhancement mode devices in a single monolithic structure. This complementary MOS device finds primary use where low power dissipation and/or high noise immunity is desired. This device provides logic−level conversio

Hex Buffers

The MC14049UB hex inverter/buffer is constructed with MOS P−channel and N−channel enhancement mode devices in a single monolithic structure. This complementary MOS device finds primary use where low power dissipation and/or high noise immunity is desired. This device provides logic−level conve

Hex Buffers

The MC14049UB hex inverter/buffer is constructed with MOS P−channel and N−channel enhancement mode devices in a single monolithic structure. This complementary MOS device finds primary use where low power dissipation and/or high noise immunity is desired. This device provides logic−level conversio

Hex Buffers

The MC14049UB hex inverter/buffer is constructed with MOS P−channel and N−channel enhancement mode devices in a single monolithic structure. This complementary MOS device finds primary use where low power dissipation and/or high noise immunity is desired. This device provides logic−level conversio

Hex Buffer

文件：131.31 Kbytes Page：8 Pages

Hex Buffer

文件：156.13 Kbytes Page：9 Pages

Hex Buffer

文件：148.25 Kbytes Page：9 Pages

Hex Buffer

文件：131.31 Kbytes Page：8 Pages

Hex Buffer

文件：148.25 Kbytes Page：9 Pages

Hex Buffer

文件：131.31 Kbytes Page：8 Pages

Hex Buffer

文件：148.25 Kbytes Page：9 Pages

封装/外壳：16-SOIC（0.154"，3.90mm 宽） 包装：卷带（TR）剪切带（CT）Digi-Reel® 得捷定制卷带 描述：IC INVERTER 6CH 1-INP 16SOIC 集成电路（IC） 门和反相器

封装/外壳：16-SOIC（0.154"，3.90mm 宽） 包装：卷带（TR）剪切带（CT）Digi-Reel® 得捷定制卷带 描述：IC INVERTER 6CH 1-INP 16SOIC 集成电路（IC） 门和反相器

Hex Buffer

文件：131.31 Kbytes Page：8 Pages

Hex Buffer

文件：148.25 Kbytes Page：9 Pages

Hex Buffer

文件：148.25 Kbytes Page：9 Pages

Hex Buffer

文件：131.31 Kbytes Page：8 Pages

Hex Buffers

文件：155.8 Kbytes Page：8 Pages

Hex Buffers

文件：107 Kbytes Page：7 Pages

Hex Buffers

文件：106.84 Kbytes Page：7 Pages

W Semiconductor Components Industries, LLC, 2004

文件：113.31 Kbytes Page：8 Pages

W Semiconductor Components Industries, LLC, 2004

文件：113.31 Kbytes Page：8 Pages

Hex Buffers

文件：107 Kbytes Page：7 Pages

Hex Buffers

文件：106.84 Kbytes Page：7 Pages

W Semiconductor Components Industries, LLC, 2004

文件：113.31 Kbytes Page：8 Pages

W Semiconductor Components Industries, LLC, 2004

文件：113.31 Kbytes Page：8 Pages

Hex Buffers

文件：155.8 Kbytes Page：8 Pages

W Semiconductor Components Industries, LLC, 2004

文件：113.31 Kbytes Page：8 Pages

W Semiconductor Components Industries, LLC, 2004

文件：113.31 Kbytes Page：8 Pages

Hex Buffers

文件：155.8 Kbytes Page：8 Pages

Hex Buffers

文件：107 Kbytes Page：7 Pages

Hex Buffers

文件：106.84 Kbytes Page：7 Pages

W Semiconductor Components Industries, LLC, 2004

文件：113.31 Kbytes Page：8 Pages

W Semiconductor Components Industries, LLC, 2004

文件：113.31 Kbytes Page：8 Pages

Hex Buffers

文件：155.8 Kbytes Page：8 Pages

CMOS HEX BUFFERS/CONVERTERS

CMOS HEX BUFFERS/CONVERTERS

CMOS HEX BUFFERS/CONVERTERS

CMOS Hex Buffer/Converters

CMOS HEX BUFFERS/CONVERTERS

CMOS Hex Buffer/Converters

CMOS HEX BUFFERS/CONVERTERS

Hex Inverter/Buffer

Hex inverting buffers

C-2MOS DIGITAL INTEGRATED CIRCUIT SILICON MONOLITHIC

Hex Buffer/Converter

HEX BUFFER/CONVERTER (INVERTING TYPE, NON-INVERTING TYPE)