Hex Buffer

The MC14049B Hex Inverter/Buffer and MC14050B Noninverting Hex Buffer are constructed with MOS P–Channel and N–Channel enhancement mode devices in a single monolithic structure. These complementary MOS devices find primary use where low power dissipation and/or high noise immunity is desired. Thes

Hex Buffer

The MC14049B Hex Inverter/Buffer and MC14050B Noninverting Hex Buffer are constructed with MOS P−Channel and N−Channel enhancement mode devices in a single monolithic structure. These complementary MOS devices find primary use where low power dissipation and/or high noise immunity is desired.

六路逆变器

Hex Buffer

文件：131.31 Kbytes Page：8 Pages

Hex Buffer

文件：156.13 Kbytes Page：9 Pages

Hex Buffer

The MC14049B Hex Inverter/Buffer and MC14050B Noninverting Hex Buffer are constructed with MOS P–Channel and N–Channel enhancement mode devices in a single monolithic structure. These complementary MOS devices find primary use where low power dissipation and/or high noise immunity is desired. Thes

Hex Buffer

The MC14049B Hex Inverter/Buffer and MC14050B Noninverting Hex Buffer are constructed with MOS P−Channel and N−Channel enhancement mode devices in a single monolithic structure. These complementary MOS devices find primary use where low power dissipation and/or high noise immunity is desired.

Hex Buffer

The MC14049B Hex Inverter/Buffer and MC14050B Noninverting Hex Buffer are constructed with MOS P–Channel and N–Channel enhancement mode devices in a single monolithic structure. These complementary MOS devices find primary use where low power dissipation and/or high noise immunity is desired. Thes

Hex Buffer

The MC14049B Hex Inverter/Buffer and MC14050B Noninverting Hex Buffer are constructed with MOS P–Channel and N–Channel enhancement mode devices in a single monolithic structure. These complementary MOS devices find primary use where low power dissipation and/or high noise immunity is desired. Thes

Hex Buffer

The MC14049B Hex Inverter/Buffer and MC14050B Noninverting Hex Buffer are constructed with MOS P–Channel and N–Channel enhancement mode devices in a single monolithic structure. These complementary MOS devices find primary use where low power dissipation and/or high noise immunity is desired. Thes

Hex Buffer

The MC14049B Hex Inverter/Buffer and MC14050B Noninverting Hex Buffer are constructed with MOS P−Channel and N−Channel enhancement mode devices in a single monolithic structure. These complementary MOS devices find primary use where low power dissipation and/or high noise immunity is desired.

Hex Buffer

The MC14049B Hex Inverter/Buffer and MC14050B Noninverting Hex Buffer are constructed with MOS P–Channel and N–Channel enhancement mode devices in a single monolithic structure. These complementary MOS devices find primary use where low power dissipation and/or high noise immunity is desired. Thes

Hex Buffer

The MC14049B Hex Inverter/Buffer and MC14050B Noninverting Hex Buffer are constructed with MOS P–Channel and N–Channel enhancement mode devices in a single monolithic structure. These complementary MOS devices find primary use where low power dissipation and/or high noise immunity is desired. Thes

Hex Buffer

The MC14049B Hex Inverter/Buffer and MC14050B Noninverting Hex Buffer are constructed with MOS P–Channel and N–Channel enhancement mode devices in a single monolithic structure. These complementary MOS devices find primary use where low power dissipation and/or high noise immunity is desired. Thes

Hex Buffer

The MC14049B Hex Inverter/Buffer and MC14050B Noninverting Hex Buffer are constructed with MOS P−Channel and N−Channel enhancement mode devices in a single monolithic structure. These complementary MOS devices find primary use where low power dissipation and/or high noise immunity is desired.

Hex Buffer

The MC14049B Hex Inverter/Buffer and MC14050B Noninverting Hex Buffer are constructed with MOS P–Channel and N–Channel enhancement mode devices in a single monolithic structure. These complementary MOS devices find primary use where low power dissipation and/or high noise immunity is desired. Thes

Hex Buffer

文件：148.25 Kbytes Page：9 Pages

Hex Buffer

文件：131.31 Kbytes Page：8 Pages

MC14049, MC14050 / Hex buffer

Hex Buffer

文件：148.25 Kbytes Page：9 Pages

封装/外壳：16-SOIC（0.154"，3.90mm 宽） 包装：卷带（TR）剪切带（CT）Digi-Reel® 得捷定制卷带 描述：IC INVERTER 6CH 1-INP 16SOIC 集成电路（IC） 门和反相器

Hex Buffer

文件：131.31 Kbytes Page：8 Pages

Hex Buffer

文件：148.25 Kbytes Page：9 Pages

Hex Buffer

文件：131.31 Kbytes Page：8 Pages

封装/外壳：16-SOIC（0.154"，3.90mm 宽） 包装：卷带（TR）剪切带（CT）Digi-Reel® 得捷定制卷带 描述：IC INVERTER 6CH 1-INP 16SOIC 集成电路（IC） 门和反相器

Hex Buffer

文件：148.25 Kbytes Page：9 Pages

Hex Buffer

文件：148.25 Kbytes Page：9 Pages

Hex Buffer

文件：131.31 Kbytes Page：8 Pages

Hex Inverter/Buffer

Flat cylinder

文件：87.65 Kbytes Page：1 Pages

SAW Filter Electrical Characteristic

文件：47.32 Kbytes Page：1 Pages

CMOS HEX BUFFERS/CONVERTERS

CMOS HEX BUFFERS/CONVERTERS

CMOS HEX BUFFERS/CONVERTERS

CMOS HEX BUFFERS/CONVERTERS

CMOS Hex Buffer/Converters

CMOS Hex Buffer/Converters

CMOS HEX BUFFERS/CONVERTERS

Hex Inverter/Buffer

Hex inverting buffers

Hex Buffer

W Semiconductor Components Industries, LLC, 2004

Hex Buffers

Hex Buffers

W Semiconductor Components Industries, LLC, 2004

C-2MOS DIGITAL INTEGRATED CIRCUIT SILICON MONOLITHIC

HEX BUFFER/CONVERTER (INVERTING TYPE, NON-INVERTING TYPE)

Hex Buffer/Converter