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MC14049B价格

参考价格:¥0.5889

型号:MC14049BDG 品牌:ON 备注:这里有MC14049B多少钱,2026年最近7天走势,今日出价,今日竞价,MC14049B批发/采购报价,MC14049B行情走势销售排行榜,MC14049B报价。
型号 功能描述 生产厂家 企业 LOGO 操作
MC14049B

Hex Buffer

The MC14049B Hex Inverter/Buffer and MC14050B Noninverting Hex Buffer are constructed with MOS P–Channel and N–Channel enhancement mode devices in a single monolithic structure. These complementary MOS devices find primary use where low power dissipation and/or high noise immunity is desired. Thes

ONSEMI

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MC14049B

Hex Buffer

The MC14049B Hex Inverter/Buffer and MC14050B Noninverting Hex Buffer are constructed with MOS P−Channel and N−Channel enhancement mode devices in a single monolithic structure. These complementary MOS devices find primary use where low power dissipation and/or high noise immunity is desired.

ONSEMI

安森美半导体

MC14049B

六路逆变器

The MC14049B Hex Inverter/Buffer and MC14050B Noninverting Hex Buffer are constructed with MOS P-Channel and N-Channel enhancement mode devices in a single monolithic structure. These complementary MOS devices find primary use where low power dissipation and/or high noise immunity is desired. These • High Source and Sink Currents\n• High-to-Low Level Converter\n• Supply Voltage Range = 3.0 V to 18 V\n• VIN can exceed VDD\n• Meets JEDEC B Specifications\n• Improved ESD Protection On All Inputs\n• Pb-Free Packages are Available*;

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MC14049B

Hex Buffer

文件:131.31 Kbytes Page:8 Pages

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MC14049B

Hex Buffer

文件:156.13 Kbytes Page:9 Pages

ONSEMI

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Hex Buffer

The MC14049B Hex Inverter/Buffer and MC14050B Noninverting Hex Buffer are constructed with MOS P−Channel and N−Channel enhancement mode devices in a single monolithic structure. These complementary MOS devices find primary use where low power dissipation and/or high noise immunity is desired.

ONSEMI

安森美半导体

MC14049, MC14050 / Hex buffer

ETC

知名厂家

Hex Buffer

The MC14049B Hex Inverter/Buffer and MC14050B Noninverting Hex Buffer are constructed with MOS P–Channel and N–Channel enhancement mode devices in a single monolithic structure. These complementary MOS devices find primary use where low power dissipation and/or high noise immunity is desired. Thes

ONSEMI

安森美半导体

Hex Buffer

The MC14049B Hex Inverter/Buffer and MC14050B Noninverting Hex Buffer are constructed with MOS P–Channel and N–Channel enhancement mode devices in a single monolithic structure. These complementary MOS devices find primary use where low power dissipation and/or high noise immunity is desired. Thes

ONSEMI

安森美半导体

Hex Buffer

The MC14049B Hex Inverter/Buffer and MC14050B Noninverting Hex Buffer are constructed with MOS P–Channel and N–Channel enhancement mode devices in a single monolithic structure. These complementary MOS devices find primary use where low power dissipation and/or high noise immunity is desired. Thes

ONSEMI

安森美半导体

Hex Buffer

The MC14049B Hex Inverter/Buffer and MC14050B Noninverting Hex Buffer are constructed with MOS P–Channel and N–Channel enhancement mode devices in a single monolithic structure. These complementary MOS devices find primary use where low power dissipation and/or high noise immunity is desired. Thes

ONSEMI

安森美半导体

Hex Buffer

The MC14049B Hex Inverter/Buffer and MC14050B Noninverting Hex Buffer are constructed with MOS P−Channel and N−Channel enhancement mode devices in a single monolithic structure. These complementary MOS devices find primary use where low power dissipation and/or high noise immunity is desired.

ONSEMI

安森美半导体

Hex Buffer

The MC14049B Hex Inverter/Buffer and MC14050B Noninverting Hex Buffer are constructed with MOS P–Channel and N–Channel enhancement mode devices in a single monolithic structure. These complementary MOS devices find primary use where low power dissipation and/or high noise immunity is desired. Thes

ONSEMI

安森美半导体

Hex Buffer

The MC14049B Hex Inverter/Buffer and MC14050B Noninverting Hex Buffer are constructed with MOS P–Channel and N–Channel enhancement mode devices in a single monolithic structure. These complementary MOS devices find primary use where low power dissipation and/or high noise immunity is desired. Thes

ONSEMI

安森美半导体

Hex Buffer

The MC14049B Hex Inverter/Buffer and MC14050B Noninverting Hex Buffer are constructed with MOS P−Channel and N−Channel enhancement mode devices in a single monolithic structure. These complementary MOS devices find primary use where low power dissipation and/or high noise immunity is desired.

ONSEMI

安森美半导体

Hex Buffer

The MC14049B Hex Inverter/Buffer and MC14050B Noninverting Hex Buffer are constructed with MOS P–Channel and N–Channel enhancement mode devices in a single monolithic structure. These complementary MOS devices find primary use where low power dissipation and/or high noise immunity is desired. Thes

ONSEMI

安森美半导体

Hex Buffer

文件:148.25 Kbytes Page:9 Pages

ONSEMI

安森美半导体

Hex Buffer

文件:131.31 Kbytes Page:8 Pages

ONSEMI

安森美半导体

Hex Buffer

文件:148.25 Kbytes Page:9 Pages

ONSEMI

安森美半导体

Hex Buffer

文件:131.31 Kbytes Page:8 Pages

ONSEMI

安森美半导体

Hex Buffer

文件:148.25 Kbytes Page:9 Pages

ONSEMI

安森美半导体

封装/外壳:16-SOIC(0.154",3.90mm 宽) 包装:卷带(TR)剪切带(CT)Digi-Reel® 得捷定制卷带 描述:IC INVERTER 6CH 1-INP 16SOIC 集成电路(IC) 门和反相器

ONSEMI

安森美半导体

Hex Buffer

文件:131.31 Kbytes Page:8 Pages

ONSEMI

安森美半导体

Hex Buffer

文件:148.25 Kbytes Page:9 Pages

ONSEMI

安森美半导体

封装/外壳:16-SOIC(0.154",3.90mm 宽) 包装:卷带(TR)剪切带(CT)Digi-Reel® 得捷定制卷带 描述:IC INVERTER 6CH 1-INP 16SOIC 集成电路(IC) 门和反相器

ONSEMI

安森美半导体

Hex Buffer

文件:148.25 Kbytes Page:9 Pages

ONSEMI

安森美半导体

Hex Buffer

文件:131.31 Kbytes Page:8 Pages

ONSEMI

安森美半导体

Hex Buffers

The MC14049UB hex inverter/buffer is constructed with MOS P−channel and N−channel enhancement mode devices in a single monolithic structure. This complementary MOS device finds primary use where low power dissipation and/or high noise immunity is desired. This device provides logic−level conversio

ONSEMI

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Hex Buffers

The MC14049UB hex inverter/buffer is constructed with MOS P−channel and N−channel enhancement mode devices in a single monolithic structure. This complementary MOS device finds primary use where low power dissipation and/or high noise immunity is desired. This device provides logic−level conversio

ONSEMI

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Hex Buffers

The MC14049UB hex inverter/buffer is constructed with MOS P−channel and N−channel enhancement mode devices in a single monolithic structure. This complementary MOS device finds primary use where low power dissipation and/or high noise immunity is desired. This device provides logic−level conversio

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替换型号 功能描述 生产厂家 企业 LOGO 操作

CMOS HEX BUFFERS/CONVERTERS

TI

德州仪器

CMOS HEX BUFFERS/CONVERTERS

TI

德州仪器

CMOS HEX BUFFERS/CONVERTERS

TI

德州仪器

CMOS HEX BUFFERS/CONVERTERS

TI

德州仪器

CMOS Hex Buffer/Converters

HARRIS

CMOS Hex Buffer/Converters

HARRIS

CMOS HEX BUFFERS/CONVERTERS

TI

德州仪器

Hex Inverter/Buffer

HITACHIHitachi Semiconductor

日立日立公司

Hex inverting buffers

ETC

Hex Buffer

ONSEMI

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W Semiconductor Components Industries, LLC, 2004

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Hex Buffers

ONSEMI

安森美半导体

Hex Buffers

ONSEMI

安森美半导体

W Semiconductor Components Industries, LLC, 2004

ONSEMI

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C-2MOS DIGITAL INTEGRATED CIRCUIT SILICON MONOLITHIC

ETC1

HEX BUFFER/CONVERTER (INVERTING TYPE, NON-INVERTING TYPE)

TOSHIBA

东芝

Hex Buffer/Converter

TOSHIBA

东芝

MC14049B产品属性

  • 类型

    描述

  • Pb-free:

    Pb

  • AEC Qualified:

    A

  • Halide free:

    H

  • PPAP Capablee:

    P

  • Status:

    Active

  • Channels:

    6

  • Output:

    CMOS

  • VCC Min (V):

    3

  • VCC Max (V):

    18

  • tpd Max (ns):

    80

  • IO Max (mA):

    16

  • Package Type:

    SOIC-16

更新时间:2026-5-14 22:59:00
IC供应商 芯片型号 品牌 批号 封装 库存 备注 价格
ON(安森美)
24+
标准封装
8382
全新原装正品/价格优惠/质量保障
ON/安森美
23+
DIP
50000
原装正品 支持实单
ONSEMI/安森美
25+
DIP
12360
ONSEMI/安森美原装特价MC14049BCP即刻询购立享优惠#长期有货
原厂
2540+
CDIP16
6852
只做原装正品假一赔十为客户做到零风险!!
ON(安森美)
25+
标准封装
20000
原装,请咨询
MOTOROLA/摩托罗拉
QQ咨询
DIP
600
全新原装 研究所指定供货商
MOTORALA
23+
DIP-16
1200
绝对全新原装!优势供货渠道!特价!请放心订购!
ON(安森美)
23+
PDIP-16
12447
公司只做原装正品,假一赔十
ON(安森美)
24+
N/A
18000
原装正品现货支持实单
ON(安森美)
26+
NA
60000
只有原装 可配单

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