SCHOTTKY ISOLATED PLASTIC RECTIFIER

FEATURES ♦ Isolated plastic package has Underwriters Laboratory Flammability Classifications 94V-0 ♦ Metal silicon junction, majority carrier conduction ♦ Low power loss, high efficiency ♦ High current capability, low forward voltage drop ♦ High surge capability ♦ For use in low voltage, hig

Schottky Barrier Rectifier

FEATURES • Low power loss, high efficiency • Low forward voltage drop • High forward surge capability • High frequency operation • Meets MSL level 1, per J-STD-020, LF maximum peak of 245 °C (for TO-263AB package) • Solder dip 260 °C, 40 s (for TO-220AC and ITO-220AC package) • Component in

SCHOTTKY BARRIER RECTIFIER

VOLTAGE RANGE: 30 - 100 V CURRENT: 10 A FEATURES High surge capacity. For use in low voltage, high frequency inverters, free 111wheeling, and polarity protection applications. Metal silicon junction, majority carrier conduction. High current capacity, low forward voltage drop.

Isolation 10.0 AMPS. Schottky Barrier Rectifiers

FEATURES - Low power loss, high efficiency - Guardring for overvoltage protection - High surge current capability - UL Recognized File # E-326243 - Compliant to RoHS Directive 2011/65/EU and in accordance to WEEE 2002/96/EC - Halogen-free according to IEC 61249-2-21 definition

Isolated plastic package has Underwriters Laboratory Flammability Classifications 94V-0

Features • Low Power Loss • High Efficiency • Low Forward Voltage , High Current Capability • High surge capacity • Case : ITO-220AC Full Molded Plastic Package

Isolated 10.0 AMPS. Schottky Barrier Rectifiers

Features ◇ Plastic material used carries Underwriters Laboratory Classifications 94V-0 ◇ Metal silicon junction, majority carrier conduction ◇ Low power loss, high efficiency ◇ High current capability, low forward voltage drop ◇ High surge capability ◇ For use in low voltage, high frequency

Schottky Barrier Rectifiers

Features ◇ High surge capacity. ◇ For use in low voltage, high frequency inverters, free wheeling, and polarity protection applications. ◇ Metal silicon junction, majority carrier conduction. ◇ High current capacity, low forward voltage drop. ◇ Guard ring for over voltage protection.

SCHOTTKY BARRIER RECTIFIERS

FEATURES ◇ High surge capacity. ◇ For use in low voltage, high frequency inverters, free wheeling, and polarity protection applications. ◇ Metal silicon junction, majority carrier conduction. ◇ High current capacity, low forward voltage drop. ◇ Guard ring for over voltage protection.

10A,35V,Schottky Barrier Rectifiers

Isolated plastic package has Underwriters Laboratory Flammability Classifications 94V-0

文件：110.39 Kbytes Page：2 Pages

Isolated 10.0 AMPS. Schottky Barrier Rectifiers

文件：327.97 Kbytes Page：2 Pages

Isolated Schottky Barrier Rectifiers

文件：226.05 Kbytes Page：4 Pages

10.0 AMPS. Isolated Schottky Barrier Rectifiers

文件：255.49 Kbytes Page：3 Pages

Isolated plastic package has Underwriters Laboratory Flammability Classifications 94V-0

文件：110.35 Kbytes Page：2 Pages

10.0 AMPS. Isolated Schottky Barrier Rectifiers

文件：150.28 Kbytes Page：2 Pages

Schottky Barrier Rectifiers

文件：255.85 Kbytes Page：3 Pages

Isolated 10.0 AMPS. Schottky Barrier Rectifiers

文件：140.27 Kbytes Page：2 Pages

Dual Schottky Rectifiers

[crownpo] Features • Plastic package has Underwriters Laboratory Flammability Classification 94V-0 • Dual rectifier construction, positive center tap • Metal silicon junction, majority carrier conduction • Low power loss, high efficiency • Guardring for overvoltage protection • For use in l

Isolated 10.0 AMPS. Schottky Barrier Rectifiers

FEATURES - Low power loss, high efficiency - Guardring for overvoltage protection - High surge current capability - UL Recognized File # E-326243 - Compliant to RoHS Directive 2011/65/EU and in accordance to WEEE 2002/96/EC - Halogen-free according to IEC 61249-2-21 definition

SCHOTTKY BARRIER RECTIFIERS

FEATURES ◇ High surge capacity. ◇ For use in low voltage, high frequency inverters, free wheeling, and polarity protection applications. ◇ Metal silicon junction, majority carrier conduction. ◇ High current capacity, low forward voltage drop. ◇ Guard ring for over voltage protection.

Plastic material used carries Underwriters Laboratory Classifications 94V-0

Features ◇ Plastic material used carries Underwriters Laboratory Classifications 94V-0 ◇ Metal silicon junction, majority carrier conduction ◇ Low power loss, high efficiency ◇ High current capability, low forward voltage drop ◇ High surge capability ◇ For use in low voltage, high frequency

Isolated 10.0 AMPS. Schottky Barrier Rectifiers

Features ◇ High surge capacity. ◇ For use in low voltage, high frequency inverters, free wheeling, and polarity protection applications. ◇ Metal silicon junction, majority carrier conduction. ◇ High current capacity, low forward voltage drop. ◇ Guard ring for over voltage protection.

TO-220F Plastic-Encapsulate Diodes

SCHOTTKY BARRIER RECTIFIER FEATURES ● Schottky Barrier Chip ● Guard Ring Die Construction for Transient Protection ● Low Power Loss,High Efficiency ● High Surge Capability ● High Current Capability and Low Forward Voltage Drop ● For Use in Low Voltage, High Frequency Inverters,Free Wheeling

SCHOTTKY BARRIER RECTIFIERS

FEATURES Metal silicon junction, majority carrier conduction. High current capacity, low forward voltage drop. Guard ring for over voltage protection. High surge capacity. For use in low voltage, high frequency inverters, free 111wheeling, and polarity protection applications.

Isolated 10.0 AMPS. Schottky Barrier Rectifiers

文件：327.97 Kbytes Page：2 Pages

Isolated 10.0 AMPS. Schottky Barrier Rectifiers

文件：140.27 Kbytes Page：2 Pages

10.0 AMPS. Isolated Schottky Barrier Rectifiers

文件：150.28 Kbytes Page：2 Pages

10.0 AMPS. Isolated Schottky Barrier Rectifiers

文件：255.49 Kbytes Page：3 Pages

Isolated Schottky Barrier Rectifiers

文件：226.05 Kbytes Page：4 Pages

Full Plastic Dual Schottky Barrier Power Rectifiers

文件：149.96 Kbytes Page：2 Pages

10.0 AMPS. Isolated Schottky Barrier Rectifiers

文件：187.65 Kbytes Page：2 Pages

包装：卷带（TR） 描述：DIODE SCHOTTKY ITO220AB 分立半导体产品 二极管 - 整流器 - 阵列

Dual Common Cathode Schottky Rectifier

文件：226.37 Kbytes Page：4 Pages

10A, 35V, Schottky Rectifier

封装/外壳：TO-220-3 全封装，隔离接片 包装：管件 描述：DIODE ARRAY SCHOTT 35V ITO220AB 分立半导体产品 二极管 - 整流器 - 阵列

10.0 AMPS. Isolated Schottky Barrier Rectifiers

文件：187.65 Kbytes Page：2 Pages

Dual Common Cathode Schottky Rectifier

文件：226.37 Kbytes Page：4 Pages

SCHOTTKY BARRIER RECTIFIERS 10 AMPERES 20 to 45 VOLTS

Switchmode Power Rectifiers . . . using the Schottky Barrier principle with a platinum barrier metal. These state–of–the–art devices have the following features: • Guardring for Stress Protection • Low Forward Voltage • 150°C Operating Junction Temperature • Guaranteed Reverse Avalanche • Ep

SWITCHMODE??Schottky Rectifier D2PAK Power Surface Mount Package

SWITCHMODE Schottky Power Rectifier DPAK Power Surface Mount Package . . . employing the Schottky Barrier principle in a large area metal–to–silicon power diode. State of the art geometry features epitaxial construction with oxide passivation and metal overlay contact. Ideally suited for low vol

MICROWAVE POWER TRANSISTOR

The RF Line Microwave Pulse Power Transistor Designed for 1025–1150 MHz pulse common base amplifier applications such as TCAS, TACAN and Mode–S transmitters. • Guaranteed Performance @ 1090 MHz Output Power = 350 Watts Peak Gain = 8.5 dB Min, 9.0 dB (Typ) • 100 Tested for Load Mismatch

MICROWAVE POWER TRANSISTORS

The RF Line Microwave Pulse Power Transistor Designed for Class B and C common base amplifier applications in short and long pulse TACAN, IFF, DME, and radar transmitters. • Guaranteed Performance @ 1090 MHz, 50 Vdc Output Power = 35 Watts Peak Minimum Gain = 10 dB • 100 Tested for Loa

SCHOTTKY BARRIER RECTIFIERS(10A,30-45V)

SWITCHMODE POWER RECTIFIERS D PAK SURFACE MOUNT POWER PACKAGE The D PAK Power rectifier employs the Schottky Barrier principle with a Molybdenum barrier metal. These state-of-the-art devices have the following features: * Low Forward Voltage * Low Switching noise * High Surge Capacity * Guara