M8050价格

参考价格:¥680.4674

型号:M8050 品牌:Microtran 备注:这里有M8050多少钱,2024年最近7天走势,今日出价,今日竞价,M8050批发/采购报价,M8050行情走势销售排行榜,M8050报价。
型号 功能描述 生产厂家&企业 LOGO 操作
M8050

NPNPlasticEncapsulateTransistor

FEATURES •Powerdissipation

SECOS

SeCoS Halbleitertechnologie GmbH

SECOS
M8050

TRANSISTOR(NPN)

TRANSISTOR(NPN) FEATURES Powerdissipation

HTSEMIShenzhen Jin Yu Semiconductor Co., Ltd.

金誉半导体深圳市金誉半导体股份有限公司

HTSEMI
M8050

SOT-23Plastic-EncapsulateTransistors

TRANSISTOR(NPN) FEATURES Powerdissipation

DAYADaya Electric Group Co., Ltd.

Daya Electric Group Co., Ltd.

DAYA
M8050

TRANSISTOR竊?NPN竊

TRANSISTOR(NPN) FEATURES Powerdissipation PCM:0.625W(Tamb=25℃) Collectorcurrent ICM:1A Collector-basevoltage V(BR)CBO:40V Operatingandstoragejunctiontemperaturerange TJ,Tstg:-55℃to+150℃

JIANGSU

Jiangsu Changjiang Electronics Technology Co., Ltd

JIANGSU
M8050

Powerdissipation

TRANSISTOR(NPN) FEATURES Powerdissipation

YEASHINYea Shin Technology Co., Ltd

亞昕科技亞昕科技股份有限公司

YEASHIN
M8050

SiliconEpitaxialPlanarTransistor

FEATURES ●HighCollectorCurrent.(IC=800mA). ●ComplementaryToM8550. ●ExcellentHFELinearity. ●Hightotalpowerdissipation.(PC=200mW). APPLICATIONS ●HighCollectorCurrent..

LUGUANGShenzhen Luguang Electronic Technology Co., Ltd

鲁光电子深圳市鲁光电子科技有限公司

LUGUANG
M8050

SiliconEpitaxialPlanarTransistor

FEATURES ●HighCollectorCurrent.(IC=800mA). ●ComplementaryToM8550. ●ExcellentHFELinearity. ●Hightotalpowerdissipation.(PC=200mW) ​​​​​​​ APPLICATIONS ●HighCollectorCurrent.

DSK

Diode Semiconductor Korea

DSK
M8050

SiliconEpitaxialPlanarTransistor

FEATURES ●HighCollectorCurrent.(IC=800mA). ●ComplementaryToM8550. ●ExcellentHFELinearity. ●Hightotalpowerdissipation.(PC=200mW). APPLICATIONS ●HighCollectorCurrent..

BILINGalaxy Semi-Conductor Holdings Limited

世纪微电子常州银河世纪微电子股份有限公司

BILIN
M8050

GeneralPurposeTransistorsNPNSilicon

FEATURE ●Highcurrentcapacityincompactpackage. IC=1.5A. ●Epitaxialplanartype. ●NPNcomplement:L8050H ●Pb-FreePackageisavailable. ●S-PrefixforAutomotiveandOtherApplicationsRequiringUniqueSite andControlChangeRequirements;AEC-Q101QualifiedandPPAPCapable

LEIDITECHShanghai Leiditech Electronic Technology Co., Ltd

雷卯电子上海雷卯电子科技有限公司

LEIDITECH
M8050

SOT-23Plastic-EncapsulateTransistors

FEATURES Powerdissipation

DGNJDZNanjing International Group Co

南晶电子东莞市南晶电子有限公司

DGNJDZ
M8050

TRANSISTOR(NPN)

FEATURES ComplimentarytoM8550CollectorCurrent:IC=0.8A

GWSEMIGoodwork Semiconductor Co., Ltd .

唯聖電子唯聖電子有限公司

GWSEMI
M8050

NPNPlastic-EncapsulateTransistors

文件:622.93 Kbytes Page:5 Pages

JINGHENG

Jinan Jing Heng Electronics Co., Ltd.

JINGHENG
M8050

SOT-23Plastic-EncapsulateTransistors(NPN)

文件:631.68 Kbytes Page:3 Pages

BYTESONICBytesonic Electronics Co., Ltd.

百特森深圳市百特森电子有限公司

BYTESONIC
M8050

NPNPlasticEncapsulateTransistor

文件:371.02 Kbytes Page:2 Pages

SECOS

SeCoS Halbleitertechnologie GmbH

SECOS

NPNSiliconPlastic-EncapsulateTransistor

Features •TO-92Plastic-EncapsulateTransistors •Capableof0.625Watts(Tamb=25°C)ofPowerDissipation. •Collector-current0.8A •Collector-baseVoltage40V •Operatingandstoragejunctiontemperaturerange:-55°Cto+150°C •MarkingCode:Y11 •EpoxymeetsUL94V-0flammabilityrating

MCCMicro Commercial Components

美微科美微科半导体公司

MCC

NPNSiliconPlastic-EncapsulateTransistor

Features •TO-92Plastic-EncapsulateTransistors •Capableof0.625Watts(Tamb=25°C)ofPowerDissipation. •Collector-current0.8A •Collector-baseVoltage40V •Operatingandstoragejunctiontemperaturerange:-55°Cto+150°C •MarkingCode:Y11 •EpoxymeetsUL94V-0flammabilityrating

MCCMicro Commercial Components

美微科美微科半导体公司

MCC

GeneralPurposeTransistorsNPNSilicon

FEATURE ●Highcurrentcapacityincompactpackage. IC=1.5A. ●Epitaxialplanartype. ●NPNcomplement:L8050H ●Pb-FreePackageisavailable. ●S-PrefixforAutomotiveandOtherApplicationsRequiringUniqueSite andControlChangeRequirements;AEC-Q101QualifiedandPPAPCapable

LEIDITECHShanghai Leiditech Electronic Technology Co., Ltd

雷卯电子上海雷卯电子科技有限公司

LEIDITECH

GeneralPurposeTransistorsNPNSilicon

FEATURE ●Highcurrentcapacityincompactpackage. IC=1.5A. ●Epitaxialplanartype. ●NPNcomplement:L8050H ●Pb-FreePackageisavailable. ●S-PrefixforAutomotiveandOtherApplicationsRequiringUniqueSite andControlChangeRequirements;AEC-Q101QualifiedandPPAPCapable

LEIDITECHShanghai Leiditech Electronic Technology Co., Ltd

雷卯电子上海雷卯电子科技有限公司

LEIDITECH

GeneralPurposeTransistorsNPNSilicon

FEATURE ●Highcurrentcapacityincompactpackage. IC=1.5A. ●Epitaxialplanartype. ●NPNcomplement:L8050H ●Pb-FreePackageisavailable. ●S-PrefixforAutomotiveandOtherApplicationsRequiringUniqueSite andControlChangeRequirements;AEC-Q101QualifiedandPPAPCapable

LEIDITECHShanghai Leiditech Electronic Technology Co., Ltd

雷卯电子上海雷卯电子科技有限公司

LEIDITECH

GeneralPurposeTransistorsNPNSilicon

FEATURE ●Highcurrentcapacityincompactpackage. IC=1.5A. ●Epitaxialplanartype. ●NPNcomplement:L8050H ●Pb-FreePackageisavailable. ●S-PrefixforAutomotiveandOtherApplicationsRequiringUniqueSite andControlChangeRequirements;AEC-Q101QualifiedandPPAPCapable

LEIDITECHShanghai Leiditech Electronic Technology Co., Ltd

雷卯电子上海雷卯电子科技有限公司

LEIDITECH

GeneralPurposeTransistorsNPNSilicon

FEATURE ●Highcurrentcapacityincompactpackage. IC=1.5A. ●Epitaxialplanartype. ●NPNcomplement:L8050H ●Pb-FreePackageisavailable. ●S-PrefixforAutomotiveandOtherApplicationsRequiringUniqueSite andControlChangeRequirements;AEC-Q101QualifiedandPPAPCapable

LEIDITECHShanghai Leiditech Electronic Technology Co., Ltd

雷卯电子上海雷卯电子科技有限公司

LEIDITECH

GeneralPurposeTransistorsNPNSilicon

FEATURE ●Highcurrentcapacityincompactpackage. IC=1.5A. ●Epitaxialplanartype. ●NPNcomplement:L8050H ●Pb-FreePackageisavailable. ●S-PrefixforAutomotiveandOtherApplicationsRequiringUniqueSite andControlChangeRequirements;AEC-Q101QualifiedandPPAPCapable

LEIDITECHShanghai Leiditech Electronic Technology Co., Ltd

雷卯电子上海雷卯电子科技有限公司

LEIDITECH

GeneralPurposeTransistorsNPNSilicon

FEATURE ●Highcurrentcapacityincompactpackage. IC=1.5A. ●Epitaxialplanartype. ●NPNcomplement:L8050H ●Pb-FreePackageisavailable. ●S-PrefixforAutomotiveandOtherApplicationsRequiringUniqueSite andControlChangeRequirements;AEC-Q101QualifiedandPPAPCapable

LEIDITECHShanghai Leiditech Electronic Technology Co., Ltd

雷卯电子上海雷卯电子科技有限公司

LEIDITECH

GeneralPurposeTransistorsNPNSilicon

FEATURE ●Highcurrentcapacityincompactpackage. IC=1.5A. ●Epitaxialplanartype. ●NPNcomplement:L8050H ●Pb-FreePackageisavailable. ●S-PrefixforAutomotiveandOtherApplicationsRequiringUniqueSite andControlChangeRequirements;AEC-Q101QualifiedandPPAPCapable

LEIDITECHShanghai Leiditech Electronic Technology Co., Ltd

雷卯电子上海雷卯电子科技有限公司

LEIDITECH

GeneralPurposeTransistorsNPNSilicon

FEATURE ●Highcurrentcapacityincompactpackage. IC=1.5A. ●Epitaxialplanartype. ●NPNcomplement:L8050H ●Pb-FreePackageisavailable. ●S-PrefixforAutomotiveandOtherApplicationsRequiringUniqueSite andControlChangeRequirements;AEC-Q101QualifiedandPPAPCapable

LEIDITECHShanghai Leiditech Electronic Technology Co., Ltd

雷卯电子上海雷卯电子科技有限公司

LEIDITECH

NPNGeneralPurposeTransistors

NPNGeneralPurposeTransistors P/bLead(Pb)-Free

WEITRONWEITRON

威堂電子科技

WEITRON

TO-92Plastic-EncapsulateTransistors

TRANSISTOR(NPN) FEATURES ●PowerDissipation

JIANGSU

Jiangsu Changjiang Electronics Technology Co., Ltd

JIANGSU

40V,0.8ANPNPlasticEncapsulateTransistor

FEATURES •Powerdissipation

SECOS

SeCoS Halbleitertechnologie GmbH

SECOS

TRANSISTOR竊?NPN竊

TRANSISTOR(NPN) FEATURES Powerdissipation PCM:0.625W(Tamb=25℃) Collectorcurrent ICM:1A Collector-basevoltage V(BR)CBO:40V Operatingandstoragejunctiontemperaturerange TJ,Tstg:-55℃to+150℃

JIANGSU

Jiangsu Changjiang Electronics Technology Co., Ltd

JIANGSU

NPNPlasticEncapsulateTransistor

文件:371.02 Kbytes Page:2 Pages

SECOS

SeCoS Halbleitertechnologie GmbH

SECOS

封装/外壳:TO-226-3,TO-92-3 标准主体(!--TO-226AA) 包装:散装 描述:TRANS NPN 25V 0.8A TO92 分立半导体产品 晶体管 - 双极性晶体管(BJT)- 单个

MCCMicro Commercial Components

美微科美微科半导体公司

MCC

封装/外壳:TO-226-3,TO-92-3(TO-226AA)成形引线 包装:带盒(TB) 描述:TRANS NPN 25V 0.8A TO92 分立半导体产品 晶体管 - 双极性晶体管(BJT)- 单个

MCCMicro Commercial Components

美微科美微科半导体公司

MCC

NPNPlasticEncapsulateTransistor

文件:64.379 Kbytes Page:1 Pages

SECOS

SeCoS Halbleitertechnologie GmbH

SECOS

NPNTRANSISTOR

PowerDissipation Pcm:1.0W CollectorCurrent Icm:1.5A Collector-BaseVoltage Vcbo:45V

STANSONStanson Technology

Stanson 科技

STANSON

NPNEPITAXIALSILICONPLANARTRANSISTOR

GENERALDESCRIPTION The8050isanNPNepitaxialsiliconplanartransistordesignedforuseintheaudiooutputstageandconverter/invertercircuit.Complementaryto8550.

MICRO-ELECTRONICS

Micro Electronics

MICRO-ELECTRONICS

TO-92Plastic-EncapsulateTransistors

TO-92Plastic-EncapsulateTransistors

DAYADaya Electric Group Co., Ltd.

Daya Electric Group Co., Ltd.

DAYA

NPNSiliconEpitaxialPlanarTransistor

NPNSiliconEpitaxialPlanarTransistor forswitchingandamplifierapplications. EspeciallysuitableforAF-driverstages andlowpoweroutputstages. Onspecialrequest,thesetransistorscanbe manufacturedindifferentpinconfigurations.

DGNJDZNanjing International Group Co

南晶电子东莞市南晶电子有限公司

DGNJDZ

iscSiliconNPNPowerTransistor

DESCRIPTION •WithSOT-23packaging •Highcollector-basevoltage •Lowsaturationvoltage •MinimumLot-to-Lotvariationsforrobustdeviceperformanceandreliableoperation APPLICATIONS •Audiooutputstageandconverters/inverterscircuits

ISCInchange Semiconductor Company Limited

无锡固电无锡固电半导体股份有限公司

ISC

M8050产品属性

  • 类型

    描述

  • 型号

    M8050

  • 制造商

    Tamura Corporation of America

更新时间:2024-4-26 20:06:00
IC供应商 芯片型号 品牌 批号 封装 库存 备注 价格
CJ/长电
24+
NA
860000
明嘉莱只做原装正品现货
Cj江苏长电
2019
SOT23-3
2000
一级代理,专注军工、汽车、医疗、工业、新能源、电力
TO-92
23+
NA
15659
振宏微专业只做正品,假一罚百!
CJ/长电
22+
SOT-23
6850
只做原装正品假一赔十!
长电
21+
SOT-23
39955
优势代理渠道,原装正品,可全系列订货开增值税票
CJ
2017+
SOT23
32455
深圳代理原装现货进口库存(香港-日本-台湾)开17点增票
CJ/长电
2023+
SOT23-3
2000
一级代理优势现货,全新正品直营店
CJ/长电
SOT-23
90000
华拓芯城用芯经营
长电
22+23+
SOT-23
23921
绝对原装正品全新进口深圳现货
CJ(江苏长电/长晶)
24+
SOT-23-3L
690000
支持实单/只做原装

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