Silicon Epitaxial Planar Transistor

FEATURES ● High Collector Current.(IC= 800mA). ● Complementary To M8550. ● Excellent HFE Linearity. ● High total power dissipation.(PC=200mW). APPLICATIONS ● High Collector Current..

SOT-23 Plastic-Encapsulate Transistors

TRANSISTOR (NPN) FEATURES Power dissipation

TRANSISTOR(NPN)

TRANSISTOR (NPN) FEATURES Power dissipation

TRANSISTOR 竊?NPN 竊

TRANSISTOR （ NPN ） FEATURES Power dissipation PCM : 0.625 W（ Tamb=25℃） Collector current ICM : 1 A Collector-base voltage V(BR)CBO : 40 V Operating and storage junction temperature range TJ， Tstg: -55℃ to +150℃

丝印代码：1HC；General Purpose Transistors NPN Silicon

FEATURE ● High current capacity in compact package. IC =1.5 A. ● Epitaxial planar type. ● NPN complement: L8050H ● Pb-Free Package is available. ● S- Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC-Q101 Qualified and PPAP Capable

NPN Plastic Encapsulate Transistor

FEATURES • Power dissipation

丝印代码：Y11；Silicon Epitaxial Planar Transistor

FEATURES ● High Collector Current.(IC= 800mA). ● Complementary To M8550. ● Excellent HFE Linearity. ● High total power dissipation.(PC=200mW). APPLICATIONS ● High Collector Current..

丝印代码：Y11；SOT-23 Plastic-Encapsulate Transistors

FEATURES Power dissipation

Silicon Epitaxial Planar Transistor

FEATURES ● High Collector Current.(IC= 800mA). ● Complementary To M8550. ● Excellent HFE Linearity. ● High total power dissipation.(PC=200mW) ​​​​​​​ APPLICATIONS ● High Collector Current.

丝印代码：J3Y；TRANSISTOR(NPN)

FEATURES Complimentary to M8550 Collector Current: IC=0.8A

Power dissipation

TRANSISTOR (NPN) FEATURES Power dissipation

丝印代码：Y11；SOT-23 Plastic-EncapsulateTransistors(NPN)

文件：631.68 Kbytes Page：3 Pages

NPN Plastic Encapsulate Transistor

文件：371.02 Kbytes Page：2 Pages

丝印代码：Y11；NPN Plastic-Encapsulate Transistors

文件：622.93 Kbytes Page：5 Pages

晶体管

NPN Silicon Plastic-Encapsulate Transistor

Features • TO-92Plastic-Encapsulate Transistors • Capable of 0.625Watts(Tamb=25°C) of Power Dissipation. • Collector-current 0.8A • Collector-base Voltage 40V • Operating and storage junction temperature range: -55°C to +150°C • Marking Code: Y11 • Epoxy meets UL 94 V-0 flammability rating

NPN Silicon Plastic-Encapsulate Transistor

Features • TO-92Plastic-Encapsulate Transistors • Capable of 0.625Watts(Tamb=25°C) of Power Dissipation. • Collector-current 0.8A • Collector-base Voltage 40V • Operating and storage junction temperature range: -55°C to +150°C • Marking Code: Y11 • Epoxy meets UL 94 V-0 flammability rating

丝印代码：1HA；General Purpose Transistors NPN Silicon

FEATURE ● High current capacity in compact package. IC =1.5 A. ● Epitaxial planar type. ● NPN complement: L8050H ● Pb-Free Package is available. ● S- Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC-Q101 Qualified and PPAP Capable

丝印代码：1HA；General Purpose Transistors NPN Silicon

FEATURE ● High current capacity in compact package. IC =1.5 A. ● Epitaxial planar type. ● NPN complement: L8050H ● Pb-Free Package is available. ● S- Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC-Q101 Qualified and PPAP Capable

丝印代码：1HC；General Purpose Transistors NPN Silicon

FEATURE ● High current capacity in compact package. IC =1.5 A. ● Epitaxial planar type. ● NPN complement: L8050H ● Pb-Free Package is available. ● S- Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC-Q101 Qualified and PPAP Capable

丝印代码：1HC；General Purpose Transistors NPN Silicon

FEATURE ● High current capacity in compact package. IC =1.5 A. ● Epitaxial planar type. ● NPN complement: L8050H ● Pb-Free Package is available. ● S- Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC-Q101 Qualified and PPAP Capable

General Purpose Transistors NPN Silicon

FEATURE ● High current capacity in compact package. IC =1.5 A. ● Epitaxial planar type. ● NPN complement: L8050H ● Pb-Free Package is available. ● S- Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC-Q101 Qualified and PPAP Capable

丝印代码：1HE；General Purpose Transistors NPN Silicon

FEATURE ● High current capacity in compact package. IC =1.5 A. ● Epitaxial planar type. ● NPN complement: L8050H ● Pb-Free Package is available. ● S- Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC-Q101 Qualified and PPAP Capable

丝印代码：1HE；General Purpose Transistors NPN Silicon

FEATURE ● High current capacity in compact package. IC =1.5 A. ● Epitaxial planar type. ● NPN complement: L8050H ● Pb-Free Package is available. ● S- Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC-Q101 Qualified and PPAP Capable

丝印代码：1HG；General Purpose Transistors NPN Silicon

FEATURE ● High current capacity in compact package. IC =1.5 A. ● Epitaxial planar type. ● NPN complement: L8050H ● Pb-Free Package is available. ● S- Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC-Q101 Qualified and PPAP Capable

丝印代码：1HG；General Purpose Transistors NPN Silicon

FEATURE ● High current capacity in compact package. IC =1.5 A. ● Epitaxial planar type. ● NPN complement: L8050H ● Pb-Free Package is available. ● S- Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC-Q101 Qualified and PPAP Capable

NPN General Purpose Transistors

NPN General Purpose Transistors P/b Lead(Pb)-Free

TO-92 Plastic-Encapsulate Transistors

TRANSISTOR (NPN) FEATURES ● Power Dissipation

40V, 0.8A NPN Plastic Encapsulate Transistor

FEATURES • Power dissipation

TRANSISTOR 竊?NPN 竊

TRANSISTOR （ NPN ） FEATURES Power dissipation PCM : 0.625 W（ Tamb=25℃） Collector current ICM : 1 A Collector-base voltage V(BR)CBO : 40 V Operating and storage junction temperature range TJ， Tstg: -55℃ to +150℃

NPN Plastic Encapsulate Transistor

文件：371.02 Kbytes Page：2 Pages

封装/外壳：TO-226-3，TO-92-3 标准主体（!--TO-226AA） 包装：散装 描述：TRANS NPN 25V 0.8A TO92 分立半导体产品 晶体管 - 双极性晶体管（BJT）- 单个

中等功率双极型晶体管

封装/外壳：TO-226-3，TO-92-3（TO-226AA）成形引线 包装：带盒（TB） 描述：TRANS NPN 25V 0.8A TO92 分立半导体产品 晶体管 - 双极性晶体管（BJT）- 单个

NPN General Purpose Transistors

NPN Plastic Encapsulate Transistor

文件：64.379 Kbytes Page：1 Pages

6-Pin DIP Optoisolators Darlington Ouput(No Base Connection)

The MOC8030 and MOC8050 devices consist of gallium arsenide infrared emitting diodes optically coupled to monolithic silicon photodarlington detectors. The chip to Pin 6 base connection has been eliminated to improve output performance in high noise environments. They are best suited for use in a

TRANSISTOR (NPN)

FEATURES ● Power Dissipation PCM : 1 W (Tamb=25°C) ● Collector Current ICM : 1.5 A ● Collector - Base Voltage V(BR)CBO : 40V

1.5A MOTOR DRIVER WITH BRAKE FUNCTION

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QPSK transmitter

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TDA8046H

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