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M8050价格
参考价格:¥680.4674
型号:M8050 品牌:Microtran 备注:这里有M8050多少钱,2024年最近7天走势,今日出价,今日竞价,M8050批发/采购报价,M8050行情走势销售排行榜,M8050报价。型号 | 功能描述 | 生产厂家&企业 | LOGO | 操作 |
---|---|---|---|---|
M8050 | NPNPlasticEncapsulateTransistor FEATURES •Powerdissipation | SECOS SeCoS Halbleitertechnologie GmbH | ||
M8050 | TRANSISTOR(NPN) TRANSISTOR(NPN) FEATURES Powerdissipation | HTSEMIShenzhen Jin Yu Semiconductor Co., Ltd. 金誉半导体深圳市金誉半导体股份有限公司 | ||
M8050 | SOT-23Plastic-EncapsulateTransistors TRANSISTOR(NPN) FEATURES Powerdissipation | DAYADaya Electric Group Co., Ltd. Daya Electric Group Co., Ltd. | ||
M8050 | TRANSISTOR竊?NPN竊 TRANSISTOR(NPN) FEATURES Powerdissipation PCM:0.625W(Tamb=25℃) Collectorcurrent ICM:1A Collector-basevoltage V(BR)CBO:40V Operatingandstoragejunctiontemperaturerange TJ,Tstg:-55℃to+150℃ | JIANGSU Jiangsu Changjiang Electronics Technology Co., Ltd | ||
M8050 | Powerdissipation TRANSISTOR(NPN) FEATURES Powerdissipation | YEASHINYea Shin Technology Co., Ltd 亞昕科技亞昕科技股份有限公司 | ||
M8050 | SiliconEpitaxialPlanarTransistor FEATURES ●HighCollectorCurrent.(IC=800mA). ●ComplementaryToM8550. ●ExcellentHFELinearity. ●Hightotalpowerdissipation.(PC=200mW). APPLICATIONS ●HighCollectorCurrent.. | LUGUANGShenzhen Luguang Electronic Technology Co., Ltd 鲁光电子深圳市鲁光电子科技有限公司 | ||
M8050 | SiliconEpitaxialPlanarTransistor FEATURES ●HighCollectorCurrent.(IC=800mA). ●ComplementaryToM8550. ●ExcellentHFELinearity. ●Hightotalpowerdissipation.(PC=200mW) APPLICATIONS ●HighCollectorCurrent. | DSK Diode Semiconductor Korea | ||
M8050 | SiliconEpitaxialPlanarTransistor FEATURES ●HighCollectorCurrent.(IC=800mA). ●ComplementaryToM8550. ●ExcellentHFELinearity. ●Hightotalpowerdissipation.(PC=200mW). APPLICATIONS ●HighCollectorCurrent.. | BILINGalaxy Semi-Conductor Holdings Limited 世纪微电子常州银河世纪微电子股份有限公司 | ||
M8050 | GeneralPurposeTransistorsNPNSilicon FEATURE ●Highcurrentcapacityincompactpackage. IC=1.5A. ●Epitaxialplanartype. ●NPNcomplement:L8050H ●Pb-FreePackageisavailable. ●S-PrefixforAutomotiveandOtherApplicationsRequiringUniqueSite andControlChangeRequirements;AEC-Q101QualifiedandPPAPCapable | LEIDITECHShanghai Leiditech Electronic Technology Co., Ltd 雷卯电子上海雷卯电子科技有限公司 | ||
M8050 | SOT-23Plastic-EncapsulateTransistors FEATURES Powerdissipation | DGNJDZNanjing International Group Co 南晶电子东莞市南晶电子有限公司 | ||
M8050 | TRANSISTOR(NPN) FEATURES ComplimentarytoM8550CollectorCurrent:IC=0.8A | GWSEMIGoodwork Semiconductor Co., Ltd . 唯聖電子唯聖電子有限公司 | ||
M8050 | NPNPlastic-EncapsulateTransistors 文件:622.93 Kbytes Page:5 Pages | JINGHENG Jinan Jing Heng Electronics Co., Ltd. | ||
M8050 | SOT-23Plastic-EncapsulateTransistors(NPN) 文件:631.68 Kbytes Page:3 Pages | BYTESONICBytesonic Electronics Co., Ltd. 百特森深圳市百特森电子有限公司 | ||
M8050 | NPNPlasticEncapsulateTransistor 文件:371.02 Kbytes Page:2 Pages | SECOS SeCoS Halbleitertechnologie GmbH | ||
NPNSiliconPlastic-EncapsulateTransistor Features •TO-92Plastic-EncapsulateTransistors •Capableof0.625Watts(Tamb=25°C)ofPowerDissipation. •Collector-current0.8A •Collector-baseVoltage40V •Operatingandstoragejunctiontemperaturerange:-55°Cto+150°C •MarkingCode:Y11 •EpoxymeetsUL94V-0flammabilityrating | MCCMicro Commercial Components 美微科美微科半导体公司 | |||
NPNSiliconPlastic-EncapsulateTransistor Features •TO-92Plastic-EncapsulateTransistors •Capableof0.625Watts(Tamb=25°C)ofPowerDissipation. •Collector-current0.8A •Collector-baseVoltage40V •Operatingandstoragejunctiontemperaturerange:-55°Cto+150°C •MarkingCode:Y11 •EpoxymeetsUL94V-0flammabilityrating | MCCMicro Commercial Components 美微科美微科半导体公司 | |||
GeneralPurposeTransistorsNPNSilicon FEATURE ●Highcurrentcapacityincompactpackage. IC=1.5A. ●Epitaxialplanartype. ●NPNcomplement:L8050H ●Pb-FreePackageisavailable. ●S-PrefixforAutomotiveandOtherApplicationsRequiringUniqueSite andControlChangeRequirements;AEC-Q101QualifiedandPPAPCapable | LEIDITECHShanghai Leiditech Electronic Technology Co., Ltd 雷卯电子上海雷卯电子科技有限公司 | |||
GeneralPurposeTransistorsNPNSilicon FEATURE ●Highcurrentcapacityincompactpackage. IC=1.5A. ●Epitaxialplanartype. ●NPNcomplement:L8050H ●Pb-FreePackageisavailable. ●S-PrefixforAutomotiveandOtherApplicationsRequiringUniqueSite andControlChangeRequirements;AEC-Q101QualifiedandPPAPCapable | LEIDITECHShanghai Leiditech Electronic Technology Co., Ltd 雷卯电子上海雷卯电子科技有限公司 | |||
GeneralPurposeTransistorsNPNSilicon FEATURE ●Highcurrentcapacityincompactpackage. IC=1.5A. ●Epitaxialplanartype. ●NPNcomplement:L8050H ●Pb-FreePackageisavailable. ●S-PrefixforAutomotiveandOtherApplicationsRequiringUniqueSite andControlChangeRequirements;AEC-Q101QualifiedandPPAPCapable | LEIDITECHShanghai Leiditech Electronic Technology Co., Ltd 雷卯电子上海雷卯电子科技有限公司 | |||
GeneralPurposeTransistorsNPNSilicon FEATURE ●Highcurrentcapacityincompactpackage. IC=1.5A. ●Epitaxialplanartype. ●NPNcomplement:L8050H ●Pb-FreePackageisavailable. ●S-PrefixforAutomotiveandOtherApplicationsRequiringUniqueSite andControlChangeRequirements;AEC-Q101QualifiedandPPAPCapable | LEIDITECHShanghai Leiditech Electronic Technology Co., Ltd 雷卯电子上海雷卯电子科技有限公司 | |||
GeneralPurposeTransistorsNPNSilicon FEATURE ●Highcurrentcapacityincompactpackage. IC=1.5A. ●Epitaxialplanartype. ●NPNcomplement:L8050H ●Pb-FreePackageisavailable. ●S-PrefixforAutomotiveandOtherApplicationsRequiringUniqueSite andControlChangeRequirements;AEC-Q101QualifiedandPPAPCapable | LEIDITECHShanghai Leiditech Electronic Technology Co., Ltd 雷卯电子上海雷卯电子科技有限公司 | |||
GeneralPurposeTransistorsNPNSilicon FEATURE ●Highcurrentcapacityincompactpackage. IC=1.5A. ●Epitaxialplanartype. ●NPNcomplement:L8050H ●Pb-FreePackageisavailable. ●S-PrefixforAutomotiveandOtherApplicationsRequiringUniqueSite andControlChangeRequirements;AEC-Q101QualifiedandPPAPCapable | LEIDITECHShanghai Leiditech Electronic Technology Co., Ltd 雷卯电子上海雷卯电子科技有限公司 | |||
GeneralPurposeTransistorsNPNSilicon FEATURE ●Highcurrentcapacityincompactpackage. IC=1.5A. ●Epitaxialplanartype. ●NPNcomplement:L8050H ●Pb-FreePackageisavailable. ●S-PrefixforAutomotiveandOtherApplicationsRequiringUniqueSite andControlChangeRequirements;AEC-Q101QualifiedandPPAPCapable | LEIDITECHShanghai Leiditech Electronic Technology Co., Ltd 雷卯电子上海雷卯电子科技有限公司 | |||
GeneralPurposeTransistorsNPNSilicon FEATURE ●Highcurrentcapacityincompactpackage. IC=1.5A. ●Epitaxialplanartype. ●NPNcomplement:L8050H ●Pb-FreePackageisavailable. ●S-PrefixforAutomotiveandOtherApplicationsRequiringUniqueSite andControlChangeRequirements;AEC-Q101QualifiedandPPAPCapable | LEIDITECHShanghai Leiditech Electronic Technology Co., Ltd 雷卯电子上海雷卯电子科技有限公司 | |||
GeneralPurposeTransistorsNPNSilicon FEATURE ●Highcurrentcapacityincompactpackage. IC=1.5A. ●Epitaxialplanartype. ●NPNcomplement:L8050H ●Pb-FreePackageisavailable. ●S-PrefixforAutomotiveandOtherApplicationsRequiringUniqueSite andControlChangeRequirements;AEC-Q101QualifiedandPPAPCapable | LEIDITECHShanghai Leiditech Electronic Technology Co., Ltd 雷卯电子上海雷卯电子科技有限公司 | |||
NPNGeneralPurposeTransistors NPNGeneralPurposeTransistors P/bLead(Pb)-Free | WEITRONWEITRON 威堂電子科技 | |||
TO-92Plastic-EncapsulateTransistors TRANSISTOR(NPN) FEATURES ●PowerDissipation | JIANGSU Jiangsu Changjiang Electronics Technology Co., Ltd | |||
40V,0.8ANPNPlasticEncapsulateTransistor FEATURES •Powerdissipation | SECOS SeCoS Halbleitertechnologie GmbH | |||
TRANSISTOR竊?NPN竊 TRANSISTOR(NPN) FEATURES Powerdissipation PCM:0.625W(Tamb=25℃) Collectorcurrent ICM:1A Collector-basevoltage V(BR)CBO:40V Operatingandstoragejunctiontemperaturerange TJ,Tstg:-55℃to+150℃ | JIANGSU Jiangsu Changjiang Electronics Technology Co., Ltd | |||
NPNPlasticEncapsulateTransistor 文件:371.02 Kbytes Page:2 Pages | SECOS SeCoS Halbleitertechnologie GmbH | |||
封装/外壳:TO-226-3,TO-92-3 标准主体(!--TO-226AA) 包装:散装 描述:TRANS NPN 25V 0.8A TO92 分立半导体产品 晶体管 - 双极性晶体管(BJT)- 单个 | MCCMicro Commercial Components 美微科美微科半导体公司 | |||
封装/外壳:TO-226-3,TO-92-3(TO-226AA)成形引线 包装:带盒(TB) 描述:TRANS NPN 25V 0.8A TO92 分立半导体产品 晶体管 - 双极性晶体管(BJT)- 单个 | MCCMicro Commercial Components 美微科美微科半导体公司 | |||
NPNPlasticEncapsulateTransistor 文件:64.379 Kbytes Page:1 Pages | SECOS SeCoS Halbleitertechnologie GmbH | |||
NPNTRANSISTOR PowerDissipation Pcm:1.0W CollectorCurrent Icm:1.5A Collector-BaseVoltage Vcbo:45V | STANSONStanson Technology Stanson 科技 | |||
NPNEPITAXIALSILICONPLANARTRANSISTOR GENERALDESCRIPTION The8050isanNPNepitaxialsiliconplanartransistordesignedforuseintheaudiooutputstageandconverter/invertercircuit.Complementaryto8550. | MICRO-ELECTRONICS Micro Electronics | |||
TO-92Plastic-EncapsulateTransistors TO-92Plastic-EncapsulateTransistors | DAYADaya Electric Group Co., Ltd. Daya Electric Group Co., Ltd. | |||
NPNSiliconEpitaxialPlanarTransistor NPNSiliconEpitaxialPlanarTransistor forswitchingandamplifierapplications. EspeciallysuitableforAF-driverstages andlowpoweroutputstages. Onspecialrequest,thesetransistorscanbe manufacturedindifferentpinconfigurations. | DGNJDZNanjing International Group Co 南晶电子东莞市南晶电子有限公司 | |||
iscSiliconNPNPowerTransistor DESCRIPTION •WithSOT-23packaging •Highcollector-basevoltage •Lowsaturationvoltage •MinimumLot-to-Lotvariationsforrobustdeviceperformanceandreliableoperation APPLICATIONS •Audiooutputstageandconverters/inverterscircuits | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 |
M8050产品属性
- 类型
描述
- 型号
M8050
- 制造商
Tamura Corporation of America
IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
---|---|---|---|---|---|---|---|
CJ/长电 |
24+ |
NA |
860000 |
明嘉莱只做原装正品现货 |
|||
Cj江苏长电 |
2019 |
SOT23-3 |
2000 |
一级代理,专注军工、汽车、医疗、工业、新能源、电力 |
|||
TO-92 |
23+ |
NA |
15659 |
振宏微专业只做正品,假一罚百! |
|||
CJ/长电 |
22+ |
SOT-23 |
6850 |
只做原装正品假一赔十! |
|||
长电 |
21+ |
SOT-23 |
39955 |
优势代理渠道,原装正品,可全系列订货开增值税票 |
|||
CJ |
2017+ |
SOT23 |
32455 |
深圳代理原装现货进口库存(香港-日本-台湾)开17点增票 |
|||
CJ/长电 |
2023+ |
SOT23-3 |
2000 |
一级代理优势现货,全新正品直营店 |
|||
CJ/长电 |
SOT-23 |
90000 |
华拓芯城用芯经营 |
||||
长电 |
22+23+ |
SOT-23 |
23921 |
绝对原装正品全新进口深圳现货 |
|||
CJ(江苏长电/长晶) |
24+ |
SOT-23-3L |
690000 |
支持实单/只做原装 |
M8050规格书下载地址
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M8050数据表相关新闻
M80-8120805
优势渠道
2023-5-9M80-8670805
优势渠道
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M80-8871005原装,只做原装
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进口代理
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焕盛达竭诚为广大客户提供一站式配套服务,解决您的BOM表采购之痛,让您采购无忧!
2020-12-14M7581-05
M7581-05
2020-9-27
DdatasheetPDF页码索引
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