NPN Silicon Plastic-Encapsulate Transistor

Features • TO-92Plastic-Encapsulate Transistors • Capable of 0.625Watts(Tamb=25°C) of Power Dissipation. • Collector-current 0.8A • Collector-base Voltage 40V • Operating and storage junction temperature range: -55°C to +150°C • Marking Code: Y11 • Epoxy meets UL 94 V-0 flammability rating

封装/外壳：TO-226-3，TO-92-3（TO-226AA）成形引线 包装：散装 描述：TRANS NPN 25V 0.8A TO92 分立半导体产品 晶体管 - 双极性晶体管（BJT）- 单个

封装/外壳：TO-226-3，TO-92-3 标准主体（!--TO-226AA） 包装：散装 描述：TRANS NPN 25V 0.8A TO92 分立半导体产品 晶体管 - 双极性晶体管（BJT）- 单个

NPN EPITAXIAL SILICON PLANAR TRANSISTOR

GENERAL DESCRIPTION The 8050 is an NPN epitaxial silicon planar transistor designed for use in the audio output stage and converter/inverter circuit. Complementary to 8550.

NPN TRANSISTOR

Power Dissipation Pcm : 1.0W Collector Current Icm : 1.5A Collector-Base Voltage Vcbo: 45V

TO-92 Plastic-Encapsulate Transistors

TO-92 Plastic-Encapsulate Transistors

NPN Silicon Epitaxial Planar Transistor

NPN Silicon Epitaxial Planar Transistor for switching and amplifier applications. Especially suitable for AF-driver stages and low power output stages. On special request, these transistors can be manufactured in different pin configurations.

isc Silicon NPN Power Transistor

DESCRIPTION • With SOT-23 packaging • High collector-base voltage • Low saturation voltage • Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS • Audio output stage and converters/inverters circuits