The MOC8030 and MOC8050 devices consist of gallium arsenide infrared emitting diodes optically coupled to monolithic silicon photodarlington detectors. The chip to Pin 6 base connection has been eliminated to improve output performance in high noise environments.

They are best suited for use in applications susceptible to high EMI levels.

• No Base Connection for Improved Noise Immunity

• High Collector–Emitter Breakdown Voltage — 80 Volts Minimum

• Higher Sensitivity to Low Input Drive Current

• To order devices that are tested and marked per VDE 0884 requirements, the

suffix ”V” must be included at end of part number. VDE 0884 is a test option.

Applications

• Appliances, Measuring Instruments

• I/O Interfaces for Computers

• Programmable Controllers

• Portable Electronics

• Interfacing and coupling systems of different potentials and impedance

• Solid State Relays