TRANSISTOR (NPN)

FEATURES ● Power Dissipation PCM : 1 W (Tamb=25°C) ● Collector Current ICM : 1.5 A ● Collector - Base Voltage V(BR)CBO : 40V

NPN General Purpose Transistors

NPN General Purpose Transistors Pb Lead(Pb)-Free

Silicon Epitaxial Planar Transistor

FEATURES ● Collector Current.(IC= 1.5A） ● Complementary To SS8550. ● Collector dissipation:PC=300mW(TC=25℃) APPLICATIONS ● High Collector Current.

TO-92 Plastic-Encapsulate Transistors

TRANSISTOR (NPN) FEATURES Power dissipation PCM : 1 W (TA=25℃) : 2 W (TC=25℃)

TRANSISTOR(NPN)

FEATURES Complimentary to SS8550

TO-92 Plastic-Encapsulate Transistors (NPN)

TRANSISTOR (NPN) FEATURES Power Dissipation PCM : 1 W (TA=25.) : 2 W (TC=25.)

NPN Silicon General Purpose Transistor

FEATURES ● Complimentary to SS8550 ● Power Dissipation PCM : 0.3W ● Collector Current ICM : 1.5A ● Collector - Base Voltage V(BR)CBO : 40V ● Operating & Storage junction temperature TJ, TSTG : -55℃ ~ +150℃

2W Output Amplifier of Portable Radios in Class B Push-pull Operation.

Features • 2 W Output Amplifier of Portable Radios in Class B Push-pull Operation. • Complimentary to SS8550 • Collector Current: IC = 1.5 A

Plastic-Encapsulate Transistors

FEATURES Complimentary to SS8550

NPN Transistors

NPN Transistors Features ● Collector Current: IC=1.5A

SOT-23 Plastic-Encapsulate Transistors

TRANSISTOR (NPN) FEATURES Complimentary to SS8550

Silicon Epitaxial Planar Transistor

FEATURES ● Collector Current.(IC= 1.5A） ● Complementary To SS8550. ● Collector dissipation:PC=300mW(TC=25℃) APPLICATIONS ● High Collector Current.

Plastic-Encapsulate Transistors

TRANSISTOR (NPN) FEATURES Power dissipation PCM : 1 W (TA=25℃) : 2 W (TC=25℃)

TRANSISTOR (NPN)

Features • Complimentary to SS8550 • RoHS compliant package

NPN Epitaxial Silicon Transistor

Features • 2 W Output Amplifier of Portable Radios in Class B Push-pull Operation. • Complimentary to SS8550 • Collector Current: IC = 1.5 A

Complimentary to SS8550

FEATURES Complimentary to SS8550

NPN Silicon Epitaxial Planar Transistor

NPN Silicon Epitaxial Planar Transistor for switching and amplifier applications. Especially suitable for AF-driver stages and low power output stages.

NPN Transistors

Features ● Collector Current: IC=1.5A

SOT-323 Plastic-Encapsulate Transistors

TRANSISTOR (NPN) FEATURES Complimentary to SS8550

Silicon Epitaxial Planar Transistor

FEATURES ● Collector Current.(IC= 1.5A） ● Complementary To SS8550. ● Collector dissipation:PC=300mW(TC=25℃) APPLICATIONS ● High Collector Current.

NPN Silicon Epitaxial Planar Transistors

NPN Silicon Epitaxial Planar Transistors FEATURES Complimentary to SS8550

Low-power pyroelectric infrared sensor signal processing chip

Product Overview HM4002 is a low-power pyroelectric infrared sensor signal processing chip, which can be matched with infrared sensor unit Simple load sensing ON/OFF and delay timing function control; at the same time, the chip built-in high-precision stable LDO 2.6V output can provide Red power

Silicon Epitaxial Planar Transistor

FEATURES ● Collector Current.(IC= 1.5A） ● Complementary To SS8550. ● Collector dissipation:PC=300mW(TC=25℃) APPLICATIONS ● High Collector Current.

General Purpose Transistors NPN Silicon

FEATURES ● High current capacity in compact package. IC =1.5 A. ● Epitaxial planar type. ● NPN complement: L8050H ● Pb-Free Package is available. ● S- Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC-Q101 Qualified and PPAP Capabl

NPN Epitaxial Silicon Transistor

Features • 2 W Output Amplifier of Portable Radios in Class B Push-pull Operation. • Complimentary to SS8550 • Collector Current: IC = 1.5 A

SOT-323 Plastic-Encapsulate Transistors

FEATURES Complimentary to SS8550

SOT-23 Plastic-Encapsulate Transistors

FEATURES Complimentary to SS8550

TRANSISTOR(NPN)

FEATURES Complimentary to SS8550

T RANSISTOR (NPN)

FEATURES Complimentary to SS8550

GENERAL PURPOSE TRANSISTOR NPN SILICON

DESCRIPTION F or switching and amplifier applications. Especially suitable for AF driver stages and low power output stages. The SS8 0 50 is available in SOT 23 p ackage. FEATURES  A vailable in SOT 23 p ackage

Silicon Epitaxial Planar Transistor

FEATURES z Collector Current.(IC= 1.5A） z Complementary To SS8550. z Collector dissipation:PC=300mW(TC=25℃) APPLICATIONS z High Collector Current.

PLASTIC-ENCAPSULATE TRANSISTORS

FEATURES © Commplimentray to PXT8550 APPLICATIONS ® This device is designed as a general purpose amplifier and switching.

Plastic-Encapsulate Transistors

文件：386.72 Kbytes Page：2 Pages

Small and medium-sized power amplifier, medium power drive and switching applications

文件：165.9 Kbytes Page：3 Pages

Plastic-Encapsulate Transistors

文件：538.14 Kbytes Page：6 Pages

TRANSISTOR (NPN)

文件：397.48 Kbytes Page：2 Pages

晶体管

小信号三极管

Transistor

NPN Plastic-Encapsulate Transistors

文件：1.32251 Mbytes Page：5 Pages

Silicon Epitaxial Planar Transistor

文件：162.39 Kbytes Page：4 Pages

2W Output Amplifier of Portable Radios in Class B Push-pull Operation.

文件：43.49 Kbytes Page：4 Pages

NPN Epitaxial Silicon Transistor

Features • 2 W Output Amplifier of Portable Radios in Class B Push-pull Operation. • Complimentary to SS8550 • Collector Current: IC = 1.5 A

SOT-323 Plastic-Encapsulate Transistors

FEATURES Complimentary to SS8550

NPN Epitaxial Silicon Transistor

Features • 2 W Output Amplifier of Portable Radios in Class B Push-pull Operation. • Complimentary to SS8550 • Collector Current: IC = 1.5 A

NPN Epitaxial Silicon Transistor

Features • 2 W Output Amplifier of Portable Radios in Class B Push-pull Operation. • Complimentary to SS8550 • Collector Current: IC = 1.5 A

SS8050 NPN Epitaxial Silicon Transistor

Features • 2 W Output Amplifier of Portable Radios in Class B Push-pull Operation. • Complimentary to SS8550 • Collector Current: IC = 1.5 A

NPN Epitaxial Silicon Transistor

Features • 2 W Output Amplifier of Portable Radios in Class B Push-pull Operation. • Complimentary to SS8550 • Collector Current: IC = 1.5 A

NPN Epitaxial Silicon Transistor

Features • 2 W Output Amplifier of Portable Radios in Class B Push-pull Operation. • Complimentary to SS8550 • Collector Current: IC = 1.5 A

NPN Epitaxial Silicon Transistor

Features • 2 W Output Amplifier of Portable Radios in Class B Push-pull Operation. • Complimentary to SS8550 • Collector Current: IC = 1.5 A

NPN Epitaxial Silicon Transistor

Features • 2 W Output Amplifier of Portable Radios in Class B Push-pull Operation. • Complimentary to SS8550 • Collector Current: IC = 1.5 A

NPN Epitaxial Silicon Transistor

Features • 2 W Output Amplifier of Portable Radios in Class B Push-pull Operation. • Complimentary to SS8550 • Collector Current: IC = 1.5 A

General Purpose Transistor

General Purpose Transistor RoHS Device

NPN Transistors

NPN Transistors Features ● Collector Current: IC=1.5A

General Purpose Transistor

Mechanical Data - Case: SOT-23, molded plastic. - Mounting position: Any.

General Purpose Transistors

Features - Epoxy meets UL-94 V-0 flammability rating. - High conductance. - Surface mount package ideally suited for automatic insertion.

General Purpose Transistors NPN Silicon

FEATURES ● High current capacity in compact package. IC =1.5 A. ● Epitaxial planar type. ● NPN complement: L8050H ● Pb-Free Package is available. ● S- Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC-Q101 Qualified and PPAP Capabl

General Purpose Transistors NPN Silicon

FEATURES ● High current capacity in compact package. IC =1.5 A. ● Epitaxial planar type. ● NPN complement: L8050H ● Pb-Free Package is available. ● S- Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC-Q101 Qualified and PPAP Capabl

General Purpose Transistors NPN Silicon

FEATURES ● High current capacity in compact package. IC =1.5 A. ● Epitaxial planar type. ● NPN complement: L8050H ● Pb-Free Package is available. ● S- Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC-Q101 Qualified and PPAP Capabl

General Purpose Transistors NPN Silicon

FEATURES ● High current capacity in compact package. IC =1.5 A. ● Epitaxial planar type. ● NPN complement: L8050H ● Pb-Free Package is available. ● S- Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC-Q101 Qualified and PPAP Capabl