NPNSiliconPlastic-EncapsulateTransistor

Features •TO-92Plastic-EncapsulateTransistors •Capableof0.625Watts(Tamb=25°C)ofPowerDissipation. •Collector-current0.8A •Collector-baseVoltage40V •Operatingandstoragejunctiontemperaturerange:-55°Cto+150°C •MarkingCode:Y11 •EpoxymeetsUL94V-0flammabilityrating

封装/外壳：TO-226-3，TO-92-3（TO-226AA）成形引线 包装：带盒（TB） 描述：TRANS NPN 25V 0.8A TO92 分立半导体产品 晶体管 - 双极性晶体管（BJT）- 单个

封装/外壳：TO-226-3，TO-92-3 标准主体（!--TO-226AA） 包装：带盒（TB） 描述：TRANS NPN 25V 0.8A TO92 分立半导体产品 晶体管 - 双极性晶体管（BJT）- 单个

NPNEPITAXIALSILICONPLANARTRANSISTOR

GENERALDESCRIPTION The8050isanNPNepitaxialsiliconplanartransistordesignedforuseintheaudiooutputstageandconverter/invertercircuit.Complementaryto8550.

NPNTRANSISTOR

PowerDissipation Pcm:1.0W CollectorCurrent Icm:1.5A Collector-BaseVoltage Vcbo:45V

TO-92Plastic-EncapsulateTransistors

TO-92Plastic-EncapsulateTransistors

NPNSiliconEpitaxialPlanarTransistor

NPNSiliconEpitaxialPlanarTransistor forswitchingandamplifierapplications. EspeciallysuitableforAF-driverstages andlowpoweroutputstages. Onspecialrequest,thesetransistorscanbe manufacturedindifferentpinconfigurations.

iscSiliconNPNPowerTransistor

DESCRIPTION •WithSOT-23packaging •Highcollector-basevoltage •Lowsaturationvoltage •MinimumLot-to-Lotvariationsforrobustdeviceperformanceandreliableoperation APPLICATIONS •Audiooutputstageandconverters/inverterscircuits