PHOTODARLINGTON OPTOCOUPLER

DESCRIPTION The MOC8050 is an optically coupled isolator with a Gallium Arsenide infrared emitter and a silicon photodarlington sensor. Switching can be achieved while maintaining a high degree of isolation between driving and load circuits, with no cross talk between channels. These optocouplers

PHOTODARLINGTON OPTOCOUPLERS (NO BASE CONNECTION)

DESCRIPTION The MOC8030 and MOC8050 are photodarlington-type optically coupled optocouplers. The devices have a gallium arsenide infrared emitting diode coupled with a silicon darlington phototransistor. FEATURES • High BVCEO -Minimum 80 V • High current transfer ratio -300 (MOC8030)

6-Pin DIP Optoisolators Darlington Ouput(No Base Connection)

The MOC8030 and MOC8050 devices consist of gallium arsenide infrared emitting diodes optically coupled to monolithic silicon photodarlington detectors. The chip to Pin 6 base connection has been eliminated to improve output performance in high noise environments. They are best suited for use in a

NON BASE LEAD OPTICALLY COUPLED ISOLATOR PHOTODARLINGTON OUTPUT

DESCRIPTION The MOC8030, MOC8050 series of optically coupled isolators consist of an infrared light emitting diode and NPN silicon photodarlington in a standard 6pin dual in line plastic package with the base pin unconnected. FEATURES ● Options :- 10mm lead spread - add G after part no.

6-Pin DIP Optoisolators Darlington Ouput(No Base Connection)

MOC8050 Non-base Lead Darlington Output 6 Pin, Single

PHOTODARLINGTON OPTOCOUPLERS Preliminary

PHOTODARLINGTON OPTOCOUPLERS Preliminary

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Photodarlington Optocoupler (No Base Connection)

Description The MOC8021M and MOC8050M are photodarlington type optically coupled optocoupler. The devices have a gallium arsenide infrared emitting diode coupled with a silicon darlington phototransistor. Features ■ High BVCEO – Minimum 50V (MOC8021M) – Minimum 80V (MOC8050M) ■ High cu

Photodarlington Optocoupler (No Base Connection)

Description The MOC8021M and MOC8050M are photodarlington type optically coupled optocoupler. The devices have a gallium arsenide infrared emitting diode coupled with a silicon darlington phototransistor. Features ■ High BVCEO – Minimum 50V (MOC8021M) – Minimum 80V (MOC8050M) ■ High cu

Photodarlington Optocoupler (No Base Connection)

Description The MOC8021M and MOC8050M are photodarlington type optically coupled optocoupler. The devices have a gallium arsenide infrared emitting diode coupled with a silicon darlington phototransistor. Features ■ High BVCEO – Minimum 50V (MOC8021M) – Minimum 80V (MOC8050M) ■ High cu

Photodarlington Optocoupler (No Base Connection)

Description The MOC8021M and MOC8050M are photodarlington type optically coupled optocoupler. The devices have a gallium arsenide infrared emitting diode coupled with a silicon darlington phototransistor. Features ■ High BVCEO – Minimum 50V (MOC8021M) – Minimum 80V (MOC8050M) ■ High cu

Photodarlington Optocoupler (No Base Connection)

Description The MOC8021M and MOC8050M are photodarlington type optically coupled optocoupler. The devices have a gallium arsenide infrared emitting diode coupled with a silicon darlington phototransistor. Features ■ High BVCEO – Minimum 50V (MOC8021M) – Minimum 80V (MOC8050M) ■ High cu

Photodarlington Optocoupler (No Base Connection)

Description The MOC8021M and MOC8050M are photodarlington type optically coupled optocoupler. The devices have a gallium arsenide infrared emitting diode coupled with a silicon darlington phototransistor. Features ■ High BVCEO – Minimum 50V (MOC8021M) – Minimum 80V (MOC8050M) ■ High cu

Photodarlington Optocoupler (No Base Connection)

Description The MOC8021M and MOC8050M are photodarlington type optically coupled optocoupler. The devices have a gallium arsenide infrared emitting diode coupled with a silicon darlington phototransistor. Features ■ High BVCEO – Minimum 50V (MOC8021M) – Minimum 80V (MOC8050M) ■ High cu

Photodarlington Optocoupler (No Base Connection)

Description The MOC8021M and MOC8050M are photodarlington type optically coupled optocoupler. The devices have a gallium arsenide infrared emitting diode coupled with a silicon darlington phototransistor. Features ■ High BVCEO – Minimum 50V (MOC8021M) – Minimum 80V (MOC8050M) ■ High cu

NON BASE LEAD OPTICALLY COUPLED ISOLATOR PHOTODARLINGTON OUTPUT

DESCRIPTION The MOC8030, MOC8050 series of optically coupled isolators consist of an infrared light emitting diode and NPN silicon photodarlington in a standard 6pin dual in line plastic package with the base pin unconnected. FEATURES ● Options :- 10mm lead spread - add G after part no.

封装/外壳：6-SMD，鸥翼 包装：卷带（TR） 描述：OPTOISO 5.3KV DARLINGTON 6-SMD 隔离器 光隔离器 - 晶体管，光电输出

封装/外壳：6-SMD，鸥翼 包装：卷带（TR） 描述：OPTOISO 5.3KV DARLINGTON 6-SMD 隔离器 光隔离器 - 晶体管，光电输出

NPN Silicon Epitaxial Planar Transistor

NPN Silicon Epitaxial Planar Transistor for switching and amplifier applications. Especially suitable for AF-driver stages and low power output stages. On special request, these transistors can be manufactured in different pin configurations.

isc Silicon NPN Power Transistor

DESCRIPTION • With SOT-23 packaging • High collector-base voltage • Low saturation voltage • Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS • Audio output stage and converters/inverters circuits

TO-92 Plastic-Encapsulate Transistors

TO-92 Plastic-Encapsulate Transistors

NPN EPITAXIAL SILICON PLANAR TRANSISTOR

GENERAL DESCRIPTION The 8050 is an NPN epitaxial silicon planar transistor designed for use in the audio output stage and converter/inverter circuit. Complementary to 8550.

NPN TRANSISTOR

Power Dissipation Pcm : 1.0W Collector Current Icm : 1.5A Collector-Base Voltage Vcbo: 45V