位置：首页 > IC中文资料第11738页 > M59DR016
| 型号 | 功能描述 | 生产厂家 企业 | LOGO | 操作 |
|---|---|---|---|---|
M59DR016 | 16 Mbit 1Mb x16, Dual Bank, Page 1.8V Supply Flash Memory DESCRIPTION The M59DR016 is a 16 Mbit non-volatile Flash memory that may be erased electrically at block level and programmed in-system on a Word-by-Word basis using a 1.65V to 2.2V VDD supply for the circuitry. For Program and Erase operations the necessary high voltages are generated internally | STMICROELECTRONICS 意法半导体 |   | |
M59DR016 | 16 Mbit 1Mb x16, Dual Bank, Page 1.8V Supply Flash Memory | STMICROELECTRONICS 意法半导体 | | |
16 Mbit 1Mb x16, Dual Bank, Page 1.8V Supply Flash Memory DESCRIPTION The M59DR016 is a 16 Mbit non-volatile Flash memory that may be erased electrically at block level and programmed in-system on a Word-by-Word basis using a 1.65V to 2.2V VDD supply for the circuitry. For Program and Erase operations the necessary high voltages are generated internally | STMICROELECTRONICS 意法半导体 | | ||
16 Mbit 1Mb x16, Dual Bank, Page 1.8V Supply Flash Memory DESCRIPTION The M59DR016 is a 16 Mbit non-volatile Flash memory that may be erased electrically at block level and programmed in-system on a Word-by-Word basis using a 1.65V to 2.2V VDD supply for the circuitry. For Program and Erase operations the necessary high voltages are generated internally | STMICROELECTRONICS 意法半导体 | | ||
16 Mbit 1Mb x16, Dual Bank, Page 1.8V Supply Flash Memory DESCRIPTION The M59DR016 is a 16 Mbit non-volatile Flash memory that may be erased electrically at block level and programmed in-system on a Word-by-Word basis using a 1.65V to 2.2V VDD supply for the circuitry. For Program and Erase operations the necessary high voltages are generated internally | STMICROELECTRONICS 意法半导体 | | ||
16 Mbit 1Mb x16, Dual Bank, Page 1.8V Supply Flash Memory DESCRIPTION The M59DR016 is a 16 Mbit non-volatile Flash memory that may be erased electrically at block level and programmed in-system on a Word-by-Word basis using a 1.65V to 2.2V VDD supply for the circuitry. For Program and Erase operations the necessary high voltages are generated internally | STMICROELECTRONICS 意法半导体 | | ||
16 Mbit 1Mb x16, Dual Bank, Page 1.8V Supply Flash Memory DESCRIPTION The M59DR016 is a 16 Mbit non-volatile Flash memory that may be erased electrically at block level and programmed in-system on a Word-by-Word basis using a 1.65V to 2.2V VDD supply for the circuitry. For Program and Erase operations the necessary high voltages are generated internally | STMICROELECTRONICS 意法半导体 | | ||
16 Mbit 1Mb x16, Dual Bank, Page 1.8V Supply Flash Memory DESCRIPTION The M59DR016 is a 16 Mbit non-volatile Flash memory that may be erased electrically at block level and programmed in-system on a Word-by-Word basis using a 1.65V to 2.2V VDD supply for the circuitry. For Program and Erase operations the necessary high voltages are generated internally | STMICROELECTRONICS 意法半导体 | | ||
16 Mbit 1Mb x16, Dual Bank, Page 1.8V Supply Flash Memory DESCRIPTION The M59DR016 is a 16 Mbit non-volatile Flash memory that may be erased electrically at block level and programmed in-system on a Word-by-Word basis using a 1.65V to 2.2V VDD supply for the circuitry. For Program and Erase operations the necessary high voltages are generated internally | STMICROELECTRONICS 意法半导体 | | ||
16 Mbit 1Mb x16, Dual Bank, Page 1.8V Supply Flash Memory DESCRIPTION The M59DR016 is a 16 Mbit non-volatile Flash memory that may be erased electrically at block level and programmed in-system on a Word-by-Word basis using a 1.65V to 2.2V VDD supply for the circuitry. For Program and Erase operations the necessary high voltages are generated internally | STMICROELECTRONICS 意法半导体 | | ||
16 Mbit 1Mb x16, Dual Bank, Page 1.8V Supply Flash Memory DESCRIPTION The M59DR016 is a 16 Mbit non-volatile Flash memory that may be erased electrically at block level and programmed in-system on a Word-by-Word basis using a 1.65V to 2.2V VDD supply for the circuitry. For Program and Erase operations the necessary high voltages are generated internally | STMICROELECTRONICS 意法半导体 | | ||
16 Mbit 1Mb x16, Dual Bank, Page 1.8V Supply Flash Memory DESCRIPTION The M59DR016 is a 16 Mbit non-volatile Flash memory that may be erased electrically at block level and programmed in-system on a Word-by-Word basis using a 1.65V to 2.2V VDD supply for the circuitry. For Program and Erase operations the necessary high voltages are generated internally | STMICROELECTRONICS 意法半导体 | | ||
16 Mbit 1Mb x16, Dual Bank, Page 1.8V Supply Flash Memory DESCRIPTION The M59DR016 is a 16 Mbit non-volatile Flash memory that may be erased electrically at block level and programmed in-system on a Word-by-Word basis using a 1.65V to 2.2V VDD supply for the circuitry. For Program and Erase operations the necessary high voltages are generated internally | STMICROELECTRONICS 意法半导体 | | ||
16 Mbit 1Mb x16, Dual Bank, Page 1.8V Supply Flash Memory DESCRIPTION The M59DR016 is a 16 Mbit non-volatile Flash memory that may be erased electrically at block level and programmed in-system on a Word-by-Word basis using a 1.65V to 2.2V VDD supply for the circuitry. For Program and Erase operations the necessary high voltages are generated internally | STMICROELECTRONICS 意法半导体 | | ||
16 Mbit 1Mb x16, Dual Bank, Page 1.8V Supply Flash Memory DESCRIPTION The M59DR016 is a 16 Mbit non-volatile Flash memory that may be erased electrically at block level and programmed in-system on a Word-by-Word basis using a 1.65V to 2.2V VDD supply for the circuitry. For Program and Erase operations the necessary high voltages are generated internally | STMICROELECTRONICS 意法半导体 | |
M59DR016产品属性
- 类型
描述
- 型号
M59DR016
- 制造商
STMICROELECTRONICS
- 制造商全称
STMicroelectronics
- 功能描述
16 Mbit 1Mb x16, Dual Bank, Page 1.8V Supply Flash Memory
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
ST/意法 |
2450+ |
BGA |
8850 |
只做原装正品假一赔十为客户做到零风险!! |
|||
ST |
2511 |
原厂原封 |
16900 |
电子元器件采购降本30%!原厂直采,砍掉中间差价 |
|||
ST |
25+ |
原厂原封 |
16900 |
原装，请咨询 |
|||
ST/意法 |
23+ |
BGA |
13000 |
原厂授权一级代理,专业海外优势订货,价格优势、品种 |
|||
ST |
25+ |
BGA48 |
3629 |
原装优势!房间现货!欢迎来电! |
|||
ST/意法 |
02+ |
BGA |
880000 |
明嘉莱只做原装正品现货 |
|||
ST |
22+ |
BGA48 |
20000 |
公司只做原装 品质保证 |
|||
SST |
原厂封装 |
9800 |
原装进口公司现货假一赔百 |
||||
ST |
26+ |
NA |
60000 |
只有原装 可配单 |
|||
ST |
2138+ |
BGA |
8960 |
专营BGA,QFP原装现货,假一赔十 |
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DdatasheetPDF页码索引
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