型号 功能描述 生产厂家&企业 LOGO 操作
M59DR016D120ZB1T

16 Mbit 1Mb x16, Dual Bank, Page 1.8V Supply Flash Memory

DESCRIPTION The M59DR016 is a 16 Mbit non-volatile Flash memory that may be erased electrically at block level and programmed in-system on a Word-by-Word basis using a 1.65V to 2.2V VDD supply for the circuitry. For Program and Erase operations the necessary high voltages are generated internally

STMICROELECTRONICS

意法半导体

M59DR016D120ZB1T产品属性

  • 类型

    描述

  • 型号

    M59DR016D120ZB1T

  • 制造商

    STMICROELECTRONICS

  • 制造商全称

    STMicroelectronics

  • 功能描述

    16 Mbit 1Mb x16, Dual Bank, Page 1.8V Supply Flash Memory

更新时间:2025-8-9 22:50:00
IC供应商 芯片型号 品牌 批号 封装 库存 备注 价格
ST
23+
BGA
12000
全新原装假一赔十
ST
24+
BGA
2987
只售原装自家现货!诚信经营!欢迎来电!
ST/意法
2450+
BGA
6540
原装现货或订发货1-2周
ST
25+23+
BGA
35947
绝对原装正品全新进口深圳现货
ST
25+
BGA
3000
全新原装、诚信经营、公司现货销售!
24+
BGA
3000
公司存货
ST/意法
23+
BGA
3000
一级代理原厂VIP渠道,专注军工、汽车、医疗、工业、
ST
22+
48TFBGA (7x12)
9000
原厂渠道,现货配单
STMicroelectronics
18+
ICFLASH32MBIT100NS48TFBG
6800
公司原装现货
ST
2447
BGA
100500
一级代理专营品牌!原装正品,优势现货,长期排单到货

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