型号 功能描述 生产厂家 企业 LOGO 操作
M59DR016D

16 Mbit 1Mb x16, Dual Bank, Page 1.8V Supply Flash Memory

DESCRIPTION The M59DR016 is a 16 Mbit non-volatile Flash memory that may be erased electrically at block level and programmed in-system on a Word-by-Word basis using a 1.65V to 2.2V VDD supply for the circuitry. For Program and Erase operations the necessary high voltages are generated internally

STMICROELECTRONICS

意法半导体

16 Mbit 1Mb x16, Dual Bank, Page 1.8V Supply Flash Memory

DESCRIPTION The M59DR016 is a 16 Mbit non-volatile Flash memory that may be erased electrically at block level and programmed in-system on a Word-by-Word basis using a 1.65V to 2.2V VDD supply for the circuitry. For Program and Erase operations the necessary high voltages are generated internally

STMICROELECTRONICS

意法半导体

16 Mbit 1Mb x16, Dual Bank, Page 1.8V Supply Flash Memory

DESCRIPTION The M59DR016 is a 16 Mbit non-volatile Flash memory that may be erased electrically at block level and programmed in-system on a Word-by-Word basis using a 1.65V to 2.2V VDD supply for the circuitry. For Program and Erase operations the necessary high voltages are generated internally

STMICROELECTRONICS

意法半导体

16 Mbit 1Mb x16, Dual Bank, Page 1.8V Supply Flash Memory

DESCRIPTION The M59DR016 is a 16 Mbit non-volatile Flash memory that may be erased electrically at block level and programmed in-system on a Word-by-Word basis using a 1.65V to 2.2V VDD supply for the circuitry. For Program and Erase operations the necessary high voltages are generated internally

STMICROELECTRONICS

意法半导体

16 Mbit 1Mb x16, Dual Bank, Page 1.8V Supply Flash Memory

DESCRIPTION The M59DR016 is a 16 Mbit non-volatile Flash memory that may be erased electrically at block level and programmed in-system on a Word-by-Word basis using a 1.65V to 2.2V VDD supply for the circuitry. For Program and Erase operations the necessary high voltages are generated internally

STMICROELECTRONICS

意法半导体

16 Mbit 1Mb x16, Dual Bank, Page 1.8V Supply Flash Memory

DESCRIPTION The M59DR016 is a 16 Mbit non-volatile Flash memory that may be erased electrically at block level and programmed in-system on a Word-by-Word basis using a 1.65V to 2.2V VDD supply for the circuitry. For Program and Erase operations the necessary high voltages are generated internally

STMICROELECTRONICS

意法半导体

16 Mbit 1Mb x16, Dual Bank, Page 1.8V Supply Flash Memory

DESCRIPTION The M59DR016 is a 16 Mbit non-volatile Flash memory that may be erased electrically at block level and programmed in-system on a Word-by-Word basis using a 1.65V to 2.2V VDD supply for the circuitry. For Program and Erase operations the necessary high voltages are generated internally

STMICROELECTRONICS

意法半导体

16 Mbit 1Mb x16, Dual Bank, Page 1.8V Supply Flash Memory

DESCRIPTION The M59DR016 is a 16 Mbit non-volatile Flash memory that may be erased electrically at block level and programmed in-system on a Word-by-Word basis using a 1.65V to 2.2V VDD supply for the circuitry. For Program and Erase operations the necessary high voltages are generated internally

STMICROELECTRONICS

意法半导体

16 Mbit 1Mb x16, Dual Bank, Page 1.8V Supply Flash Memory

DESCRIPTION The M59DR016 is a 16 Mbit non-volatile Flash memory that may be erased electrically at block level and programmed in-system on a Word-by-Word basis using a 1.65V to 2.2V VDD supply for the circuitry. For Program and Erase operations the necessary high voltages are generated internally

STMICROELECTRONICS

意法半导体

M59DR016D产品属性

  • 类型

    描述

  • 型号

    M59DR016D

  • 制造商

    STMICROELECTRONICS

  • 制造商全称

    STMicroelectronics

  • 功能描述

    16 Mbit 1Mb x16, Dual Bank, Page 1.8V Supply Flash Memory

更新时间:2025-10-27 22:52:00
IC供应商 芯片型号 品牌 批号 封装 库存 备注 价格
ST
23+
BGA
12000
全新原装假一赔十
ST
25+
BGA
18000
原厂直接发货进口原装
STMicroelectronics
21+
60-FBGA
5280
进口原装!长期供应!绝对优势价格(诚信经营
NA
25+
NA
27
全新原装正品支持含税
ST
25+23+
BGA
35947
绝对原装正品全新进口深圳现货
ST
2138+
BGA
8960
专营BGA,QFP原装现货,假一赔十
ST/意法
24+
BGA
3000
全新原装现货 优势库存
ST
25+
BGA
3000
全新原装、诚信经营、公司现货销售!
ST/意法
2450+
BGA
6540
原装现货或订发货1-2周
ST
25+
BGA
2987
只售原装自家现货!诚信经营!欢迎来电!

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