型号 功能描述 生产厂家 企业 LOGO 操作
M59DR016C

16 Mbit 1Mb x16, Dual Bank, Page 1.8V Supply Flash Memory

DESCRIPTION The M59DR016 is a 16 Mbit non-volatile Flash memory that may be erased electrically at block level and programmed in-system on a Word-by-Word basis using a 1.65V to 2.2V VDD supply for the circuitry. For Program and Erase operations the necessary high voltages are generated internally

STMICROELECTRONICS

意法半导体

16 Mbit 1Mb x16, Dual Bank, Page 1.8V Supply Flash Memory

DESCRIPTION The M59DR016 is a 16 Mbit non-volatile Flash memory that may be erased electrically at block level and programmed in-system on a Word-by-Word basis using a 1.65V to 2.2V VDD supply for the circuitry. For Program and Erase operations the necessary high voltages are generated internally

STMICROELECTRONICS

意法半导体

16 Mbit 1Mb x16, Dual Bank, Page 1.8V Supply Flash Memory

DESCRIPTION The M59DR016 is a 16 Mbit non-volatile Flash memory that may be erased electrically at block level and programmed in-system on a Word-by-Word basis using a 1.65V to 2.2V VDD supply for the circuitry. For Program and Erase operations the necessary high voltages are generated internally

STMICROELECTRONICS

意法半导体

16 Mbit 1Mb x16, Dual Bank, Page 1.8V Supply Flash Memory

DESCRIPTION The M59DR016 is a 16 Mbit non-volatile Flash memory that may be erased electrically at block level and programmed in-system on a Word-by-Word basis using a 1.65V to 2.2V VDD supply for the circuitry. For Program and Erase operations the necessary high voltages are generated internally

STMICROELECTRONICS

意法半导体

16 Mbit 1Mb x16, Dual Bank, Page 1.8V Supply Flash Memory

DESCRIPTION The M59DR016 is a 16 Mbit non-volatile Flash memory that may be erased electrically at block level and programmed in-system on a Word-by-Word basis using a 1.65V to 2.2V VDD supply for the circuitry. For Program and Erase operations the necessary high voltages are generated internally

STMICROELECTRONICS

意法半导体

16 Mbit 1Mb x16, Dual Bank, Page 1.8V Supply Flash Memory

DESCRIPTION The M59DR016 is a 16 Mbit non-volatile Flash memory that may be erased electrically at block level and programmed in-system on a Word-by-Word basis using a 1.65V to 2.2V VDD supply for the circuitry. For Program and Erase operations the necessary high voltages are generated internally

STMICROELECTRONICS

意法半导体

16 Mbit 1Mb x16, Dual Bank, Page 1.8V Supply Flash Memory

DESCRIPTION The M59DR016 is a 16 Mbit non-volatile Flash memory that may be erased electrically at block level and programmed in-system on a Word-by-Word basis using a 1.65V to 2.2V VDD supply for the circuitry. For Program and Erase operations the necessary high voltages are generated internally

STMICROELECTRONICS

意法半导体

16 Mbit 1Mb x16, Dual Bank, Page 1.8V Supply Flash Memory

DESCRIPTION The M59DR016 is a 16 Mbit non-volatile Flash memory that may be erased electrically at block level and programmed in-system on a Word-by-Word basis using a 1.65V to 2.2V VDD supply for the circuitry. For Program and Erase operations the necessary high voltages are generated internally

STMICROELECTRONICS

意法半导体

16 Mbit 1Mb x16, Dual Bank, Page 1.8V Supply Flash Memory

DESCRIPTION The M59DR016 is a 16 Mbit non-volatile Flash memory that may be erased electrically at block level and programmed in-system on a Word-by-Word basis using a 1.65V to 2.2V VDD supply for the circuitry. For Program and Erase operations the necessary high voltages are generated internally

STMICROELECTRONICS

意法半导体

M59DR016C产品属性

  • 类型

    描述

  • 型号

    M59DR016C

  • 制造商

    STMICROELECTRONICS

  • 制造商全称

    STMicroelectronics

  • 功能描述

    16 Mbit 1Mb x16, Dual Bank, Page 1.8V Supply Flash Memory

更新时间:2025-12-26 16:38:00
IC供应商 芯片型号 品牌 批号 封装 库存 备注 价格
ST
25+
BGA
3200
全新原装、诚信经营、公司现货销售!
ST
26+
NA
60000
只有原装 可配单
ST/意法
23+
BGA
13000
原厂授权一级代理,专业海外优势订货,价格优势、品种
ST
25+
BGA
18000
原厂直接发货进口原装
ST
25+
原厂原封
16900
原装,请咨询
ST/意法
2450+
BGA
8850
只做原装正品假一赔十为客户做到零风险!!
ST
24+
BGA
42
现货
ST
2138+
BGA
8960
专营BGA,QFP原装现货,假一赔十
ST
25+
BGA
4500
百分百原装正品 真实公司现货库存 本公司只做原装 可
ST
22+
BGA48
20000
公司只做原装 品质保证

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