型号 功能描述 生产厂家&企业 LOGO 操作

32Mbit2Mbx16,DualBank,PageFlashMemoryand4Mbit256Kx16SRAM,MultipleMemoryProduct

DESCRIPTION TheM36DR432isamultichipmemorydevicecontaininga32MbitbootblockFlashmemoryanda4MbitofSRAM.ThedeviceisofferedinaStackedLFBGA66(0.8mmpitch)package. FEATURESSUMMARY ■SUPPLYVOLTAGE –VDDF=VDDS=1.65Vto2.2V –VPPF=12VforFastProgram(opt

STMICROELECTRONICSSTMicroelectronics

意法半导体意法半导体集团

STMICROELECTRONICS

32Mbit2Mbx16,DualBank,PageFlashMemoryand4Mbit256Kx16SRAM,MultipleMemoryProduct

DESCRIPTION TheM36DR432isamultichipmemorydevicecontaininga32MbitbootblockFlashmemoryanda4MbitofSRAM.ThedeviceisofferedinaStackedLFBGA66(0.8mmpitch)package. FEATURESSUMMARY ■SUPPLYVOLTAGE –VDDF=VDDS=1.65Vto2.2V –VPPF=12VforFastProgram(opt

STMICROELECTRONICSSTMicroelectronics

意法半导体意法半导体集团

STMICROELECTRONICS

32Mbit2Mbx16,DualBank,PageFlashMemoryand4Mbit256Kx16SRAM,MultipleMemoryProduct

DESCRIPTION TheM36DR432isamultichipmemorydevicecontaininga32MbitbootblockFlashmemoryanda4MbitofSRAM.ThedeviceisofferedinaStackedLFBGA66(0.8mmpitch)package. FEATURESSUMMARY ■SUPPLYVOLTAGE –VDDF=VDDS=1.65Vto2.2V –VPPF=12VforFastProgram(opt

STMICROELECTRONICSSTMicroelectronics

意法半导体意法半导体集团

STMICROELECTRONICS

32Mbit2Mbx16,DualBank,PageFlashMemoryand4Mbit256Kx16SRAM,MultipleMemoryProduct

DESCRIPTION TheM36DR432isamultichipmemorydevicecontaininga32MbitbootblockFlashmemoryanda4MbitofSRAM.ThedeviceisofferedinaStackedLFBGA66(0.8mmpitch)package. FEATURESSUMMARY ■SUPPLYVOLTAGE –VDDF=VDDS=1.65Vto2.2V –VPPF=12VforFastProgram(opt

STMICROELECTRONICSSTMicroelectronics

意法半导体意法半导体集团

STMICROELECTRONICS

32Mbit2Mbx16,DualBank,PageFlashMemoryand4Mbit256Kx16SRAM,MultipleMemoryProduct

DESCRIPTION TheM36DR432isamultichipmemorydevicecontaininga32MbitbootblockFlashmemoryanda4MbitofSRAM.ThedeviceisofferedinaStackedLFBGA66(0.8mmpitch)package. FEATURESSUMMARY ■SUPPLYVOLTAGE –VDDF=VDDS=1.65Vto2.2V –VPPF=12VforFastProgram(opt

STMICROELECTRONICSSTMicroelectronics

意法半导体意法半导体集团

STMICROELECTRONICS

32Mbit2Mbx16,DualBank,PageFlashMemoryand4Mbit256Kbx16SRAM,MultipleMemoryProduct

SUMMARYDESCRIPTION TheM36DR432AD/BDisalow-voltageMultipleMemoryProductwhichcombinestwomemorydevices:a32Mbit(2Mbitx16)non-volatileFlashmemoryanda4MbitSRAM. ThememoryisavailableinaStackedLFBGA6612x8mm-8x8activeballarray,0.8mmpitchpackageandsuppliedwit

STMICROELECTRONICSSTMicroelectronics

意法半导体意法半导体集团

STMICROELECTRONICS

32Mbit2Mbx16,DualBank,PageFlashMemoryand4Mbit256Kbx16SRAM,MultipleMemoryProduct

SUMMARYDESCRIPTION TheM36DR432AD/BDisalow-voltageMultipleMemoryProductwhichcombinestwomemorydevices:a32Mbit(2Mbitx16)non-volatileFlashmemoryanda4MbitSRAM. ThememoryisavailableinaStackedLFBGA6612x8mm-8x8activeballarray,0.8mmpitchpackageandsuppliedwit

STMICROELECTRONICSSTMicroelectronics

意法半导体意法半导体集团

STMICROELECTRONICS

32Mbit2Mbx16,DualBank,PageFlashMemoryand4Mbit256Kbx16SRAM,MultipleMemoryProduct

SUMMARYDESCRIPTION TheM36DR432AD/BDisalow-voltageMultipleMemoryProductwhichcombinestwomemorydevices:a32Mbit(2Mbitx16)non-volatileFlashmemoryanda4MbitSRAM. ThememoryisavailableinaStackedLFBGA6612x8mm-8x8activeballarray,0.8mmpitchpackageandsuppliedwit

STMICROELECTRONICSSTMicroelectronics

意法半导体意法半导体集团

STMICROELECTRONICS

32Mbit2Mbx16,DualBank,PageFlashMemoryand4Mbit256Kbx16SRAM,MultipleMemoryProduct

SUMMARYDESCRIPTION TheM36DR432AD/BDisalow-voltageMultipleMemoryProductwhichcombinestwomemorydevices:a32Mbit(2Mbitx16)non-volatileFlashmemoryanda4MbitSRAM. ThememoryisavailableinaStackedLFBGA6612x8mm-8x8activeballarray,0.8mmpitchpackageandsuppliedwit

STMICROELECTRONICSSTMicroelectronics

意法半导体意法半导体集团

STMICROELECTRONICS

32Mbit2Mbx16,DualBank,PageFlashMemoryand4Mbit256Kbx16SRAM,MultipleMemoryProduct

SUMMARYDESCRIPTION TheM36DR432AD/BDisalow-voltageMultipleMemoryProductwhichcombinestwomemorydevices:a32Mbit(2Mbitx16)non-volatileFlashmemoryanda4MbitSRAM. ThememoryisavailableinaStackedLFBGA6612x8mm-8x8activeballarray,0.8mmpitchpackageandsuppliedwit

STMICROELECTRONICSSTMicroelectronics

意法半导体意法半导体集团

STMICROELECTRONICS

32Mbit2Mbx16,DualBank,PageFlashMemoryand4Mbit256Kx16SRAM,MultipleMemoryProduct

DESCRIPTION TheM36DR432isamultichipmemorydevicecontaininga32MbitbootblockFlashmemoryanda4MbitofSRAM.ThedeviceisofferedinaStackedLFBGA66(0.8mmpitch)package. FEATURESSUMMARY ■SUPPLYVOLTAGE –VDDF=VDDS=1.65Vto2.2V –VPPF=12VforFastProgram(opt

STMICROELECTRONICSSTMicroelectronics

意法半导体意法半导体集团

STMICROELECTRONICS

32Mbit2Mbx16,DualBank,PageFlashMemoryand4Mbit256Kx16SRAM,MultipleMemoryProduct

DESCRIPTION TheM36DR432isamultichipmemorydevicecontaininga32MbitbootblockFlashmemoryanda4MbitofSRAM.ThedeviceisofferedinaStackedLFBGA66(0.8mmpitch)package. FEATURESSUMMARY ■SUPPLYVOLTAGE –VDDF=VDDS=1.65Vto2.2V –VPPF=12VforFastProgram(opt

STMICROELECTRONICSSTMicroelectronics

意法半导体意法半导体集团

STMICROELECTRONICS

32Mbit2Mbx16,DualBank,PageFlashMemoryand4Mbit256Kx16SRAM,MultipleMemoryProduct

DESCRIPTION TheM36DR432isamultichipmemorydevicecontaininga32MbitbootblockFlashmemoryanda4MbitofSRAM.ThedeviceisofferedinaStackedLFBGA66(0.8mmpitch)package. FEATURESSUMMARY ■SUPPLYVOLTAGE –VDDF=VDDS=1.65Vto2.2V –VPPF=12VforFastProgram(opt

STMICROELECTRONICSSTMicroelectronics

意法半导体意法半导体集团

STMICROELECTRONICS

32Mbit2Mbx16,DualBank,PageFlashMemoryand4Mbit256Kx16SRAM,MultipleMemoryProduct

DESCRIPTION TheM36DR432isamultichipmemorydevicecontaininga32MbitbootblockFlashmemoryanda4MbitofSRAM.ThedeviceisofferedinaStackedLFBGA66(0.8mmpitch)package. FEATURESSUMMARY ■SUPPLYVOLTAGE –VDDF=VDDS=1.65Vto2.2V –VPPF=12VforFastProgram(opt

STMICROELECTRONICSSTMicroelectronics

意法半导体意法半导体集团

STMICROELECTRONICS

32Mbit2Mbx16,DualBank,PageFlashMemoryand4Mbit256Kx16SRAM,MultipleMemoryProduct

DESCRIPTION TheM36DR432isamultichipmemorydevicecontaininga32MbitbootblockFlashmemoryanda4MbitofSRAM.ThedeviceisofferedinaStackedLFBGA66(0.8mmpitch)package. FEATURESSUMMARY ■SUPPLYVOLTAGE –VDDF=VDDS=1.65Vto2.2V –VPPF=12VforFastProgram(opt

STMICROELECTRONICSSTMicroelectronics

意法半导体意法半导体集团

STMICROELECTRONICS

32Mbit2Mbx16,DualBank,PageFlashMemoryand4Mbit256Kx16SRAM,MultipleMemoryProduct

DESCRIPTION TheM36DR432isamultichipmemorydevicecontaininga32MbitbootblockFlashmemoryanda4MbitofSRAM.ThedeviceisofferedinaStackedLFBGA66(0.8mmpitch)package. FEATURESSUMMARY ■SUPPLYVOLTAGE –VDDF=VDDS=1.65Vto2.2V –VPPF=12VforFastProgram(opt

STMICROELECTRONICSSTMicroelectronics

意法半导体意法半导体集团

STMICROELECTRONICS

32Mbit2Mbx16,DualBank,PageFlashMemoryand4Mbit256Kbx16SRAM,MultipleMemoryProduct

SUMMARYDESCRIPTION TheM36DR432AD/BDisalow-voltageMultipleMemoryProductwhichcombinestwomemorydevices:a32Mbit(2Mbitx16)non-volatileFlashmemoryanda4MbitSRAM. ThememoryisavailableinaStackedLFBGA6612x8mm-8x8activeballarray,0.8mmpitchpackageandsuppliedwit

STMICROELECTRONICSSTMicroelectronics

意法半导体意法半导体集团

STMICROELECTRONICS

32Mbit2Mbx16,DualBank,PageFlashMemoryand4Mbit256Kbx16SRAM,MultipleMemoryProduct

SUMMARYDESCRIPTION TheM36DR432AD/BDisalow-voltageMultipleMemoryProductwhichcombinestwomemorydevices:a32Mbit(2Mbitx16)non-volatileFlashmemoryanda4MbitSRAM. ThememoryisavailableinaStackedLFBGA6612x8mm-8x8activeballarray,0.8mmpitchpackageandsuppliedwit

STMICROELECTRONICSSTMicroelectronics

意法半导体意法半导体集团

STMICROELECTRONICS

32Mbit2Mbx16,DualBank,PageFlashMemoryand4Mbit256Kbx16SRAM,MultipleMemoryProduct

SUMMARYDESCRIPTION TheM36DR432AD/BDisalow-voltageMultipleMemoryProductwhichcombinestwomemorydevices:a32Mbit(2Mbitx16)non-volatileFlashmemoryanda4MbitSRAM. ThememoryisavailableinaStackedLFBGA6612x8mm-8x8activeballarray,0.8mmpitchpackageandsuppliedwit

STMICROELECTRONICSSTMicroelectronics

意法半导体意法半导体集团

STMICROELECTRONICS

32Mbit2Mbx16,DualBank,PageFlashMemoryand4Mbit256Kbx16SRAM,MultipleMemoryProduct

SUMMARYDESCRIPTION TheM36DR432AD/BDisalow-voltageMultipleMemoryProductwhichcombinestwomemorydevices:a32Mbit(2Mbitx16)non-volatileFlashmemoryanda4MbitSRAM. ThememoryisavailableinaStackedLFBGA6612x8mm-8x8activeballarray,0.8mmpitchpackageandsuppliedwit

STMICROELECTRONICSSTMicroelectronics

意法半导体意法半导体集团

STMICROELECTRONICS

32Mbit2Mbx16,DualBank,PageFlashMemoryand4Mbit256Kbx16SRAM,MultipleMemoryProduct

SUMMARYDESCRIPTION TheM36DR432AD/BDisalow-voltageMultipleMemoryProductwhichcombinestwomemorydevices:a32Mbit(2Mbitx16)non-volatileFlashmemoryanda4MbitSRAM. ThememoryisavailableinaStackedLFBGA6612x8mm-8x8activeballarray,0.8mmpitchpackageandsuppliedwit

STMICROELECTRONICSSTMicroelectronics

意法半导体意法半导体集团

STMICROELECTRONICS

32Mbit2Mbx16,DualBank,PageFlashMemoryand4Mbit256Kx16SRAM,MultipleMemoryProduct

DESCRIPTION TheM36DR432isamultichipmemorydevicecontaininga32MbitbootblockFlashmemoryanda4MbitofSRAM.ThedeviceisofferedinaStackedLFBGA66(0.8mmpitch)package. FEATURESSUMMARY ■SUPPLYVOLTAGE –VDDF=VDDS=1.65Vto2.2V –VPPF=12VforFastProgram(opt

STMICROELECTRONICSSTMicroelectronics

意法半导体意法半导体集团

STMICROELECTRONICS

32Mbit2Mbx16,DualBank,PageFlashMemoryand4Mbit256Kx16SRAM,MultipleMemoryProduct

DESCRIPTION TheM36DR432isamultichipmemorydevicecontaininga32MbitbootblockFlashmemoryanda4MbitofSRAM.ThedeviceisofferedinaStackedLFBGA66(0.8mmpitch)package. Thetwocomponentsaredistinguishedbyusewiththreechipenableinputs:EFfortheFlashmemoryand,E1S

STMICROELECTRONICSSTMicroelectronics

意法半导体意法半导体集团

STMICROELECTRONICS

32Mbit2Mbx16,DualBank,PageFlashMemoryand4Mbit256Kx16SRAM,MultipleMemoryProduct

DESCRIPTION TheM36DR432isamultichipmemorydevicecontaininga32MbitbootblockFlashmemoryanda4MbitofSRAM.ThedeviceisofferedinaStackedLFBGA66(0.8mmpitch)package. Thetwocomponentsaredistinguishedbyusewiththreechipenableinputs:EFfortheFlashmemoryand,E1S

STMICROELECTRONICSSTMicroelectronics

意法半导体意法半导体集团

STMICROELECTRONICS

32Mbit2Mbx16,DualBank,PageFlashMemoryand4Mbit256Kx16SRAM,MultipleMemoryProduct

DESCRIPTION TheM36DR432isamultichipmemorydevicecontaininga32MbitbootblockFlashmemoryanda4MbitofSRAM.ThedeviceisofferedinaStackedLFBGA66(0.8mmpitch)package. Thetwocomponentsaredistinguishedbyusewiththreechipenableinputs:EFfortheFlashmemoryand,E1S

STMICROELECTRONICSSTMicroelectronics

意法半导体意法半导体集团

STMICROELECTRONICS

32Mbit2Mbx16,DualBank,PageFlashMemoryand4Mbit256Kx16SRAM,MultipleMemoryProduct

DESCRIPTION TheM36DR432isamultichipmemorydevicecontaininga32MbitbootblockFlashmemoryanda4MbitofSRAM.ThedeviceisofferedinaStackedLFBGA66(0.8mmpitch)package. Thetwocomponentsaredistinguishedbyusewiththreechipenableinputs:EFfortheFlashmemoryand,E1S

STMICROELECTRONICSSTMicroelectronics

意法半导体意法半导体集团

STMICROELECTRONICS

32Mbit2Mbx16,DualBank,PageFlashMemoryand4Mbit256Kx16SRAM,MultipleMemoryProduct

DESCRIPTION TheM36DR432isamultichipmemorydevicecontaininga32MbitbootblockFlashmemoryanda4MbitofSRAM.ThedeviceisofferedinaStackedLFBGA66(0.8mmpitch)package. Thetwocomponentsaredistinguishedbyusewiththreechipenableinputs:EFfortheFlashmemoryand,E1S

STMICROELECTRONICSSTMicroelectronics

意法半导体意法半导体集团

STMICROELECTRONICS

32Mbit2Mbx16,DualBank,PageFlashMemoryand4Mbit256Kx16SRAM,MultipleMemoryProduct

DESCRIPTION TheM36DR432isamultichipmemorydevicecontaininga32MbitbootblockFlashmemoryanda4MbitofSRAM.ThedeviceisofferedinaStackedLFBGA66(0.8mmpitch)package. Thetwocomponentsaredistinguishedbyusewiththreechipenableinputs:EFfortheFlashmemoryand,E1S

STMICROELECTRONICSSTMicroelectronics

意法半导体意法半导体集团

STMICROELECTRONICS

32Mbit2Mbx16,DualBank,PageFlashMemoryand4Mbit256Kx16SRAM,MultipleMemoryProduct

DESCRIPTION TheM36DR432isamultichipmemorydevicecontaininga32MbitbootblockFlashmemoryanda4MbitofSRAM.ThedeviceisofferedinaStackedLFBGA66(0.8mmpitch)package. Thetwocomponentsaredistinguishedbyusewiththreechipenableinputs:EFfortheFlashmemoryand,E1S

STMICROELECTRONICSSTMicroelectronics

意法半导体意法半导体集团

STMICROELECTRONICS

32Mbit2Mbx16,DualBank,PageFlashMemoryand4Mbit256Kx16SRAM,MultipleMemoryProduct

DESCRIPTION TheM36DR432isamultichipmemorydevicecontaininga32MbitbootblockFlashmemoryanda4MbitofSRAM.ThedeviceisofferedinaStackedLFBGA66(0.8mmpitch)package. Thetwocomponentsaredistinguishedbyusewiththreechipenableinputs:EFfortheFlashmemoryand,E1S

STMICROELECTRONICSSTMicroelectronics

意法半导体意法半导体集团

STMICROELECTRONICS

32Mbit2Mbx16,DualBank,PageFlashMemoryand4Mbit256Kx16SRAM,MultipleMemoryProduct

DESCRIPTION TheM36DR432isamultichipmemorydevicecontaininga32MbitbootblockFlashmemoryanda4MbitofSRAM.ThedeviceisofferedinaStackedLFBGA66(0.8mmpitch)package. Thetwocomponentsaredistinguishedbyusewiththreechipenableinputs:EFfortheFlashmemoryand,E1S

STMICROELECTRONICSSTMicroelectronics

意法半导体意法半导体集团

STMICROELECTRONICS

32Mbit2Mbx16,DualBank,PageFlashMemoryand4Mbit256Kx16SRAM,MultipleMemoryProduct

DESCRIPTION TheM36DR432isamultichipmemorydevicecontaininga32MbitbootblockFlashmemoryanda4MbitofSRAM.ThedeviceisofferedinaStackedLFBGA66(0.8mmpitch)package. FEATURESSUMMARY ■SUPPLYVOLTAGE –VDDF=VDDS=1.65Vto2.2V –VPPF=12VforFastProgram(opt

STMICROELECTRONICSSTMicroelectronics

意法半导体意法半导体集团

STMICROELECTRONICS

封装/外壳:66-LFBGA 包装:托盘 描述:IC FLASH 32MBIT PARALLEL 66LFBGA 集成电路(IC) 存储器

STMICROELECTRONICSSTMicroelectronics

意法半导体意法半导体集团

STMICROELECTRONICS

M36DR432产品属性

  • 类型

    描述

  • 型号

    M36DR432

  • 制造商

    STMICROELECTRONICS

  • 制造商全称

    STMicroelectronics

  • 功能描述

    32 Mbit 2Mb x16, Dual Bank, Page Flash Memory and 4 Mbit 256K x16 SRAM, Multiple Memory Product

更新时间:2025-6-9 20:00:00
IC供应商 芯片型号 品牌 批号 封装 库存 备注 价格
ST/意法
24+
NA/
10450
原装现货,当天可交货,原型号开票
ST/意法
25+
BGA
54648
百分百原装现货 实单必成
STM
23+
BGA-67
3200
全新原装、诚信经营、公司现货销售!
ST
0341+
BGA
1800
一级代理,专注军工、汽车、医疗、工业、新能源、电力
2017+
BGA
28562
只做原装正品假一赔十!
STM
BGA-67
68500
一级代理 原装正品假一罚十价格优势长期供货
STMicroelectronics
2003
BGA
647
原装现货海量库存欢迎咨询
ST
05+
原厂原装
2451
只做全新原装真实现货供应
ST
22+
BGA
43167
原装正品现货
STM
24+
BGA
2568
原装优势!绝对公司现货

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M36DR432数据表相关新闻