型号 功能描述 生产厂家 企业 LOGO 操作

32 Mbit 2Mb x16, Dual Bank, Page Flash Memory and 4 Mbit 256K x16 SRAM, Multiple Memory Product

DESCRIPTION The M36DR432 is a multichip memory device containing a 32 Mbit boot block Flash memory and a 4 Mbit of SRAM. The device is offered in a Stacked LFBGA66 (0.8 mm pitch) package. FEATURES SUMMARY ■ SUPPLY VOLTAGE – VDDF = VDDS =1.65V to 2.2V – VPPF = 12V for Fast Program (opt

STMICROELECTRONICS

意法半导体

32 Mbit 2Mb x16, Dual Bank, Page Flash Memory and 4 Mbit 256K x16 SRAM, Multiple Memory Product

DESCRIPTION The M36DR432 is a multichip memory device containing a 32 Mbit boot block Flash memory and a 4 Mbit of SRAM. The device is offered in a Stacked LFBGA66 (0.8 mm pitch) package. FEATURES SUMMARY ■ SUPPLY VOLTAGE – VDDF = VDDS =1.65V to 2.2V – VPPF = 12V for Fast Program (opt

STMICROELECTRONICS

意法半导体

32 Mbit 2Mb x16, Dual Bank, Page Flash Memory and 4 Mbit 256K x16 SRAM, Multiple Memory Product

DESCRIPTION The M36DR432 is a multichip memory device containing a 32 Mbit boot block Flash memory and a 4 Mbit of SRAM. The device is offered in a Stacked LFBGA66 (0.8 mm pitch) package. FEATURES SUMMARY ■ SUPPLY VOLTAGE – VDDF = VDDS =1.65V to 2.2V – VPPF = 12V for Fast Program (opt

STMICROELECTRONICS

意法半导体

32 Mbit 2Mb x16, Dual Bank, Page Flash Memory and 4 Mbit 256K x16 SRAM, Multiple Memory Product

DESCRIPTION The M36DR432 is a multichip memory device containing a 32 Mbit boot block Flash memory and a 4 Mbit of SRAM. The device is offered in a Stacked LFBGA66 (0.8 mm pitch) package. FEATURES SUMMARY ■ SUPPLY VOLTAGE – VDDF = VDDS =1.65V to 2.2V – VPPF = 12V for Fast Program (opt

STMICROELECTRONICS

意法半导体

32 Mbit 2Mb x16, Dual Bank, Page Flash Memory and 4 Mbit 256K x16 SRAM, Multiple Memory Product

DESCRIPTION The M36DR432 is a multichip memory device containing a 32 Mbit boot block Flash memory and a 4 Mbit of SRAM. The device is offered in a Stacked LFBGA66 (0.8 mm pitch) package. FEATURES SUMMARY ■ SUPPLY VOLTAGE – VDDF = VDDS =1.65V to 2.2V – VPPF = 12V for Fast Program (opt

STMICROELECTRONICS

意法半导体

32 Mbit 2Mb x16, Dual Bank, Page Flash Memory and 4 Mbit 256Kb x16 SRAM, Multiple Memory Product

SUMMARY DESCRIPTION The M36DR432AD/BD is a low-voltage Multiple Memory Product which combines two memory de vices: a 32 Mbit (2Mbit x16) non-volatile Flash memory and a 4 Mbit SRAM. The memory is available in a Stacked LFBGA66 12x8mm - 8x8 active ball array, 0.8mm pitch pack age and supplied wit

STMICROELECTRONICS

意法半导体

32 Mbit 2Mb x16, Dual Bank, Page Flash Memory and 4 Mbit 256Kb x16 SRAM, Multiple Memory Product

SUMMARY DESCRIPTION The M36DR432AD/BD is a low-voltage Multiple Memory Product which combines two memory de vices: a 32 Mbit (2Mbit x16) non-volatile Flash memory and a 4 Mbit SRAM. The memory is available in a Stacked LFBGA66 12x8mm - 8x8 active ball array, 0.8mm pitch pack age and supplied wit

STMICROELECTRONICS

意法半导体

32 Mbit 2Mb x16, Dual Bank, Page Flash Memory and 4 Mbit 256Kb x16 SRAM, Multiple Memory Product

SUMMARY DESCRIPTION The M36DR432AD/BD is a low-voltage Multiple Memory Product which combines two memory de vices: a 32 Mbit (2Mbit x16) non-volatile Flash memory and a 4 Mbit SRAM. The memory is available in a Stacked LFBGA66 12x8mm - 8x8 active ball array, 0.8mm pitch pack age and supplied wit

STMICROELECTRONICS

意法半导体

32 Mbit 2Mb x16, Dual Bank, Page Flash Memory and 4 Mbit 256Kb x16 SRAM, Multiple Memory Product

SUMMARY DESCRIPTION The M36DR432AD/BD is a low-voltage Multiple Memory Product which combines two memory de vices: a 32 Mbit (2Mbit x16) non-volatile Flash memory and a 4 Mbit SRAM. The memory is available in a Stacked LFBGA66 12x8mm - 8x8 active ball array, 0.8mm pitch pack age and supplied wit

STMICROELECTRONICS

意法半导体

32 Mbit 2Mb x16, Dual Bank, Page Flash Memory and 4 Mbit 256Kb x16 SRAM, Multiple Memory Product

SUMMARY DESCRIPTION The M36DR432AD/BD is a low-voltage Multiple Memory Product which combines two memory de vices: a 32 Mbit (2Mbit x16) non-volatile Flash memory and a 4 Mbit SRAM. The memory is available in a Stacked LFBGA66 12x8mm - 8x8 active ball array, 0.8mm pitch pack age and supplied wit

STMICROELECTRONICS

意法半导体

32 Mbit 2Mb x16, Dual Bank, Page Flash Memory and 4 Mbit 256K x16 SRAM, Multiple Memory Product

DESCRIPTION The M36DR432 is a multichip memory device containing a 32 Mbit boot block Flash memory and a 4 Mbit of SRAM. The device is offered in a Stacked LFBGA66 (0.8 mm pitch) package. FEATURES SUMMARY ■ SUPPLY VOLTAGE – VDDF = VDDS =1.65V to 2.2V – VPPF = 12V for Fast Program (opt

STMICROELECTRONICS

意法半导体

32 Mbit 2Mb x16, Dual Bank, Page Flash Memory and 4 Mbit 256K x16 SRAM, Multiple Memory Product

DESCRIPTION The M36DR432 is a multichip memory device containing a 32 Mbit boot block Flash memory and a 4 Mbit of SRAM. The device is offered in a Stacked LFBGA66 (0.8 mm pitch) package. FEATURES SUMMARY ■ SUPPLY VOLTAGE – VDDF = VDDS =1.65V to 2.2V – VPPF = 12V for Fast Program (opt

STMICROELECTRONICS

意法半导体

32 Mbit 2Mb x16, Dual Bank, Page Flash Memory and 4 Mbit 256K x16 SRAM, Multiple Memory Product

DESCRIPTION The M36DR432 is a multichip memory device containing a 32 Mbit boot block Flash memory and a 4 Mbit of SRAM. The device is offered in a Stacked LFBGA66 (0.8 mm pitch) package. FEATURES SUMMARY ■ SUPPLY VOLTAGE – VDDF = VDDS =1.65V to 2.2V – VPPF = 12V for Fast Program (opt

STMICROELECTRONICS

意法半导体

32 Mbit 2Mb x16, Dual Bank, Page Flash Memory and 4 Mbit 256K x16 SRAM, Multiple Memory Product

DESCRIPTION The M36DR432 is a multichip memory device containing a 32 Mbit boot block Flash memory and a 4 Mbit of SRAM. The device is offered in a Stacked LFBGA66 (0.8 mm pitch) package. FEATURES SUMMARY ■ SUPPLY VOLTAGE – VDDF = VDDS =1.65V to 2.2V – VPPF = 12V for Fast Program (opt

STMICROELECTRONICS

意法半导体

32 Mbit 2Mb x16, Dual Bank, Page Flash Memory and 4 Mbit 256K x16 SRAM, Multiple Memory Product

DESCRIPTION The M36DR432 is a multichip memory device containing a 32 Mbit boot block Flash memory and a 4 Mbit of SRAM. The device is offered in a Stacked LFBGA66 (0.8 mm pitch) package. FEATURES SUMMARY ■ SUPPLY VOLTAGE – VDDF = VDDS =1.65V to 2.2V – VPPF = 12V for Fast Program (opt

STMICROELECTRONICS

意法半导体

32 Mbit 2Mb x16, Dual Bank, Page Flash Memory and 4 Mbit 256K x16 SRAM, Multiple Memory Product

DESCRIPTION The M36DR432 is a multichip memory device containing a 32 Mbit boot block Flash memory and a 4 Mbit of SRAM. The device is offered in a Stacked LFBGA66 (0.8 mm pitch) package. FEATURES SUMMARY ■ SUPPLY VOLTAGE – VDDF = VDDS =1.65V to 2.2V – VPPF = 12V for Fast Program (opt

STMICROELECTRONICS

意法半导体

32 Mbit 2Mb x16, Dual Bank, Page Flash Memory and 4 Mbit 256Kb x16 SRAM, Multiple Memory Product

SUMMARY DESCRIPTION The M36DR432AD/BD is a low-voltage Multiple Memory Product which combines two memory de vices: a 32 Mbit (2Mbit x16) non-volatile Flash memory and a 4 Mbit SRAM. The memory is available in a Stacked LFBGA66 12x8mm - 8x8 active ball array, 0.8mm pitch pack age and supplied wit

STMICROELECTRONICS

意法半导体

32 Mbit 2Mb x16, Dual Bank, Page Flash Memory and 4 Mbit 256Kb x16 SRAM, Multiple Memory Product

SUMMARY DESCRIPTION The M36DR432AD/BD is a low-voltage Multiple Memory Product which combines two memory de vices: a 32 Mbit (2Mbit x16) non-volatile Flash memory and a 4 Mbit SRAM. The memory is available in a Stacked LFBGA66 12x8mm - 8x8 active ball array, 0.8mm pitch pack age and supplied wit

STMICROELECTRONICS

意法半导体

32 Mbit 2Mb x16, Dual Bank, Page Flash Memory and 4 Mbit 256Kb x16 SRAM, Multiple Memory Product

SUMMARY DESCRIPTION The M36DR432AD/BD is a low-voltage Multiple Memory Product which combines two memory de vices: a 32 Mbit (2Mbit x16) non-volatile Flash memory and a 4 Mbit SRAM. The memory is available in a Stacked LFBGA66 12x8mm - 8x8 active ball array, 0.8mm pitch pack age and supplied wit

STMICROELECTRONICS

意法半导体

32 Mbit 2Mb x16, Dual Bank, Page Flash Memory and 4 Mbit 256Kb x16 SRAM, Multiple Memory Product

SUMMARY DESCRIPTION The M36DR432AD/BD is a low-voltage Multiple Memory Product which combines two memory de vices: a 32 Mbit (2Mbit x16) non-volatile Flash memory and a 4 Mbit SRAM. The memory is available in a Stacked LFBGA66 12x8mm - 8x8 active ball array, 0.8mm pitch pack age and supplied wit

STMICROELECTRONICS

意法半导体

32 Mbit 2Mb x16, Dual Bank, Page Flash Memory and 4 Mbit 256Kb x16 SRAM, Multiple Memory Product

SUMMARY DESCRIPTION The M36DR432AD/BD is a low-voltage Multiple Memory Product which combines two memory de vices: a 32 Mbit (2Mbit x16) non-volatile Flash memory and a 4 Mbit SRAM. The memory is available in a Stacked LFBGA66 12x8mm - 8x8 active ball array, 0.8mm pitch pack age and supplied wit

STMICROELECTRONICS

意法半导体

32 Mbit 2Mb x16, Dual Bank, Page Flash Memory and 4 Mbit 256K x16 SRAM, Multiple Memory Product

DESCRIPTION The M36DR432 is a multichip memory device containing a 32 Mbit boot block Flash memory and a 4 Mbit of SRAM. The device is offered in a Stacked LFBGA66 (0.8 mm pitch) package. FEATURES SUMMARY ■ SUPPLY VOLTAGE – VDDF = VDDS =1.65V to 2.2V – VPPF = 12V for Fast Program (opt

STMICROELECTRONICS

意法半导体

32 Mbit 2Mb x16, Dual Bank, Page Flash Memory and 4 Mbit 256K x16 SRAM, Multiple Memory Product

DESCRIPTION The M36DR432 is a multichip memory device containing a 32 Mbit boot block Flash memory and a 4 Mbit of SRAM. The device is offered in a Stacked LFBGA66 (0.8 mm pitch) package. The two components are distinguished by use with three chip enable inputs: EF for the Flash memory and, E1S

STMICROELECTRONICS

意法半导体

32 Mbit 2Mb x16, Dual Bank, Page Flash Memory and 4 Mbit 256K x16 SRAM, Multiple Memory Product

DESCRIPTION The M36DR432 is a multichip memory device containing a 32 Mbit boot block Flash memory and a 4 Mbit of SRAM. The device is offered in a Stacked LFBGA66 (0.8 mm pitch) package. The two components are distinguished by use with three chip enable inputs: EF for the Flash memory and, E1S

STMICROELECTRONICS

意法半导体

32 Mbit 2Mb x16, Dual Bank, Page Flash Memory and 4 Mbit 256K x16 SRAM, Multiple Memory Product

DESCRIPTION The M36DR432 is a multichip memory device containing a 32 Mbit boot block Flash memory and a 4 Mbit of SRAM. The device is offered in a Stacked LFBGA66 (0.8 mm pitch) package. The two components are distinguished by use with three chip enable inputs: EF for the Flash memory and, E1S

STMICROELECTRONICS

意法半导体

32 Mbit 2Mb x16, Dual Bank, Page Flash Memory and 4 Mbit 256K x16 SRAM, Multiple Memory Product

DESCRIPTION The M36DR432 is a multichip memory device containing a 32 Mbit boot block Flash memory and a 4 Mbit of SRAM. The device is offered in a Stacked LFBGA66 (0.8 mm pitch) package. The two components are distinguished by use with three chip enable inputs: EF for the Flash memory and, E1S

STMICROELECTRONICS

意法半导体

32 Mbit 2Mb x16, Dual Bank, Page Flash Memory and 4 Mbit 256K x16 SRAM, Multiple Memory Product

DESCRIPTION The M36DR432 is a multichip memory device containing a 32 Mbit boot block Flash memory and a 4 Mbit of SRAM. The device is offered in a Stacked LFBGA66 (0.8 mm pitch) package. The two components are distinguished by use with three chip enable inputs: EF for the Flash memory and, E1S

STMICROELECTRONICS

意法半导体

32 Mbit 2Mb x16, Dual Bank, Page Flash Memory and 4 Mbit 256K x16 SRAM, Multiple Memory Product

DESCRIPTION The M36DR432 is a multichip memory device containing a 32 Mbit boot block Flash memory and a 4 Mbit of SRAM. The device is offered in a Stacked LFBGA66 (0.8 mm pitch) package. The two components are distinguished by use with three chip enable inputs: EF for the Flash memory and, E1S

STMICROELECTRONICS

意法半导体

32 Mbit 2Mb x16, Dual Bank, Page Flash Memory and 4 Mbit 256K x16 SRAM, Multiple Memory Product

DESCRIPTION The M36DR432 is a multichip memory device containing a 32 Mbit boot block Flash memory and a 4 Mbit of SRAM. The device is offered in a Stacked LFBGA66 (0.8 mm pitch) package. The two components are distinguished by use with three chip enable inputs: EF for the Flash memory and, E1S

STMICROELECTRONICS

意法半导体

32 Mbit 2Mb x16, Dual Bank, Page Flash Memory and 4 Mbit 256K x16 SRAM, Multiple Memory Product

DESCRIPTION The M36DR432 is a multichip memory device containing a 32 Mbit boot block Flash memory and a 4 Mbit of SRAM. The device is offered in a Stacked LFBGA66 (0.8 mm pitch) package. The two components are distinguished by use with three chip enable inputs: EF for the Flash memory and, E1S

STMICROELECTRONICS

意法半导体

32 Mbit 2Mb x16, Dual Bank, Page Flash Memory and 4 Mbit 256K x16 SRAM, Multiple Memory Product

DESCRIPTION The M36DR432 is a multichip memory device containing a 32 Mbit boot block Flash memory and a 4 Mbit of SRAM. The device is offered in a Stacked LFBGA66 (0.8 mm pitch) package. The two components are distinguished by use with three chip enable inputs: EF for the Flash memory and, E1S

STMICROELECTRONICS

意法半导体

32 Mbit 2Mb x16, Dual Bank, Page Flash Memory and 4 Mbit 256K x16 SRAM, Multiple Memory Product

DESCRIPTION The M36DR432 is a multichip memory device containing a 32 Mbit boot block Flash memory and a 4 Mbit of SRAM. The device is offered in a Stacked LFBGA66 (0.8 mm pitch) package. FEATURES SUMMARY ■ SUPPLY VOLTAGE – VDDF = VDDS =1.65V to 2.2V – VPPF = 12V for Fast Program (opt

STMICROELECTRONICS

意法半导体

32 Mbit 2Mb x16, Dual Bank, Page Flash Memory and 4 Mbit 256Kb x16 SRAM, Multiple Memory Product

STMICROELECTRONICS

意法半导体

封装/外壳:66-LFBGA 包装:托盘 描述:IC FLASH 32MBIT PARALLEL 66LFBGA 集成电路(IC) 存储器

STMICROELECTRONICS

意法半导体

32 Mbit 2Mb x16, Dual Bank, Page Flash Memory and 4 Mbit 256K x16 SRAM, Multiple Memory Product

STMICROELECTRONICS

意法半导体

M36DR432产品属性

  • 类型

    描述

  • 型号

    M36DR432

  • 制造商

    STMICROELECTRONICS

  • 制造商全称

    STMicroelectronics

  • 功能描述

    32 Mbit 2Mb x16, Dual Bank, Page Flash Memory and 4 Mbit 256K x16 SRAM, Multiple Memory Product

更新时间:2025-12-27 23:01:00
IC供应商 芯片型号 品牌 批号 封装 库存 备注 价格
ST/意法
24+
NA/
10450
原装现货,当天可交货,原型号开票
ST/意法
25+
BGA
54648
百分百原装现货 实单必成
STM
25+
BGA
2568
原装优势!绝对公司现货
STM
25+
BGA-67
3200
全新原装、诚信经营、公司现货销售!
ST/意法
22+
TFBGA88
3000
原装正品,支持实单
ST/意法
23+
LFBGA-66
13000
原厂授权一级代理,专业海外优势订货,价格优势、品种
ST
23+
TFBGA
16900
正规渠道,只有原装!
ST
25+
BGA
18000
原厂直接发货进口原装
ST
0341+
BGA
1800
一级代理,专注军工、汽车、医疗、工业、新能源、电力
ST
22+
BGA
20000
公司只做原装 品质保障

M36DR432数据表相关新闻