型号 功能描述 生产厂家 企业 LOGO 操作
M36DR432CZA

32 Mbit 2Mb x16, Dual Bank, Page Flash Memory and 4 Mbit 256K x16 SRAM, Multiple Memory Product

DESCRIPTION The M36DR432 is a multichip memory device containing a 32 Mbit boot block Flash memory and a 4 Mbit of SRAM. The device is offered in a Stacked LFBGA66 (0.8 mm pitch) package. The two components are distinguished by use with three chip enable inputs: EF for the Flash memory and, E1S

STMICROELECTRONICS

意法半导体

32 Mbit 2Mb x16, Dual Bank, Page Flash Memory and 4 Mbit 256K x16 SRAM, Multiple Memory Product

DESCRIPTION The M36DR432 is a multichip memory device containing a 32 Mbit boot block Flash memory and a 4 Mbit of SRAM. The device is offered in a Stacked LFBGA66 (0.8 mm pitch) package. FEATURES SUMMARY ■ SUPPLY VOLTAGE – VDDF = VDDS =1.65V to 2.2V – VPPF = 12V for Fast Program (opt

STMICROELECTRONICS

意法半导体

32 Mbit 2Mb x16, Dual Bank, Page Flash Memory and 4 Mbit 256Kb x16 SRAM, Multiple Memory Product

SUMMARY DESCRIPTION The M36DR432AD/BD is a low-voltage Multiple Memory Product which combines two memory de vices: a 32 Mbit (2Mbit x16) non-volatile Flash memory and a 4 Mbit SRAM. The memory is available in a Stacked LFBGA66 12x8mm - 8x8 active ball array, 0.8mm pitch pack age and supplied wit

STMICROELECTRONICS

意法半导体

32 Mbit 2Mb x16, Dual Bank, Page Flash Memory and 4 Mbit 256Kb x16 SRAM, Multiple Memory Product

SUMMARY DESCRIPTION The M36DR432AD/BD is a low-voltage Multiple Memory Product which combines two memory de vices: a 32 Mbit (2Mbit x16) non-volatile Flash memory and a 4 Mbit SRAM. The memory is available in a Stacked LFBGA66 12x8mm - 8x8 active ball array, 0.8mm pitch pack age and supplied wit

STMICROELECTRONICS

意法半导体

32 Mbit 2Mb x16, Dual Bank, Page Flash Memory and 4 Mbit 256K x16 SRAM, Multiple Memory Product

DESCRIPTION The M36DR432 is a multichip memory device containing a 32 Mbit boot block Flash memory and a 4 Mbit of SRAM. The device is offered in a Stacked LFBGA66 (0.8 mm pitch) package. FEATURES SUMMARY ■ SUPPLY VOLTAGE – VDDF = VDDS =1.65V to 2.2V – VPPF = 12V for Fast Program (opt

STMICROELECTRONICS

意法半导体

32 Mbit 2Mb x16, Dual Bank, Page Flash Memory and 4 Mbit 256K x16 SRAM, Multiple Memory Product

DESCRIPTION The M36DR432 is a multichip memory device containing a 32 Mbit boot block Flash memory and a 4 Mbit of SRAM. The device is offered in a Stacked LFBGA66 (0.8 mm pitch) package. FEATURES SUMMARY ■ SUPPLY VOLTAGE – VDDF = VDDS =1.65V to 2.2V – VPPF = 12V for Fast Program (opt

STMICROELECTRONICS

意法半导体

更新时间:2026-1-2 13:01:00
IC供应商 芯片型号 品牌 批号 封装 库存 备注 价格
STM
BGA
6688
15
现货库存
ST
2511
TFBGA
16900
电子元器件采购降本30%!原厂直采,砍掉中间差价
ST
25+
TFBGA
16900
原装,请咨询
ST/意法
23+
LFBGA-66
13000
原厂授权一级代理,专业海外优势订货,价格优势、品种
ST
23+
TFBGA
16900
正规渠道,只有原装!
ST/意法
23+
BGA
50000
全新原装正品现货,支持订货
ST
05+
原厂原装
2451
只做全新原装真实现货供应
MXIC
23+24
WSON-8
27960
原装现货.优势热卖.终端BOM表可配单
ST/意法
22+
TFBGA88
3000
原装正品,支持实单
原装STM
24+
BGA
63200
一级代理/放心采购

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