型号 功能描述 生产厂家&企业 LOGO 操作
M36DR432BDZA

32 Mbit 2Mb x16, Dual Bank, Page Flash Memory and 4 Mbit 256Kb x16 SRAM, Multiple Memory Product

SUMMARY DESCRIPTION The M36DR432AD/BD is a low-voltage Multiple Memory Product which combines two memory de vices: a 32 Mbit (2Mbit x16) non-volatile Flash memory and a 4 Mbit SRAM. The memory is available in a Stacked LFBGA66 12x8mm - 8x8 active ball array, 0.8mm pitch pack age and supplied wit

STMICROELECTRONICS

意法半导体

32 Mbit 2Mb x16, Dual Bank, Page Flash Memory and 4 Mbit 256K x16 SRAM, Multiple Memory Product

DESCRIPTION The M36DR432 is a multichip memory device containing a 32 Mbit boot block Flash memory and a 4 Mbit of SRAM. The device is offered in a Stacked LFBGA66 (0.8 mm pitch) package. FEATURES SUMMARY ■ SUPPLY VOLTAGE – VDDF = VDDS =1.65V to 2.2V – VPPF = 12V for Fast Program (opt

STMICROELECTRONICS

意法半导体

32 Mbit 2Mb x16, Dual Bank, Page Flash Memory and 4 Mbit 256Kb x16 SRAM, Multiple Memory Product

SUMMARY DESCRIPTION The M36DR432AD/BD is a low-voltage Multiple Memory Product which combines two memory de vices: a 32 Mbit (2Mbit x16) non-volatile Flash memory and a 4 Mbit SRAM. The memory is available in a Stacked LFBGA66 12x8mm - 8x8 active ball array, 0.8mm pitch pack age and supplied wit

STMICROELECTRONICS

意法半导体

32 Mbit 2Mb x16, Dual Bank, Page Flash Memory and 4 Mbit 256Kb x16 SRAM, Multiple Memory Product

SUMMARY DESCRIPTION The M36DR432AD/BD is a low-voltage Multiple Memory Product which combines two memory de vices: a 32 Mbit (2Mbit x16) non-volatile Flash memory and a 4 Mbit SRAM. The memory is available in a Stacked LFBGA66 12x8mm - 8x8 active ball array, 0.8mm pitch pack age and supplied wit

STMICROELECTRONICS

意法半导体

32 Mbit 2Mb x16, Dual Bank, Page Flash Memory and 4 Mbit 256K x16 SRAM, Multiple Memory Product

DESCRIPTION The M36DR432 is a multichip memory device containing a 32 Mbit boot block Flash memory and a 4 Mbit of SRAM. The device is offered in a Stacked LFBGA66 (0.8 mm pitch) package. FEATURES SUMMARY ■ SUPPLY VOLTAGE – VDDF = VDDS =1.65V to 2.2V – VPPF = 12V for Fast Program (opt

STMICROELECTRONICS

意法半导体

32 Mbit 2Mb x16, Dual Bank, Page Flash Memory and 4 Mbit 256K x16 SRAM, Multiple Memory Product

DESCRIPTION The M36DR432 is a multichip memory device containing a 32 Mbit boot block Flash memory and a 4 Mbit of SRAM. The device is offered in a Stacked LFBGA66 (0.8 mm pitch) package. FEATURES SUMMARY ■ SUPPLY VOLTAGE – VDDF = VDDS =1.65V to 2.2V – VPPF = 12V for Fast Program (opt

STMICROELECTRONICS

意法半导体

更新时间:2025-8-7 11:47:00
IC供应商 芯片型号 品牌 批号 封装 库存 备注 价格
STM
24+
BGA
2568
原装优势!绝对公司现货
ST/意法
23+
LFBGA-66
13000
原厂授权一级代理,专业海外优势订货,价格优势、品种
STM
BGA-67
68500
一级代理 原装正品假一罚十价格优势长期供货
ST/意法
23+
BGA
50000
全新原装正品现货,支持订货
ST
22+
BGA
43167
原装正品现货
ST/意法
2023+
TFBGA88
6893
专注全新正品,优势现货供应
原装STM
19+
BGA
20000
原装现货假一罚十
ST
05+
原厂原装
2451
只做全新原装真实现货供应
ST/意法
23+
TFBGA88
89630
当天发货全新原装现货
STMicroelectronics
2003
BGA
647
原装现货海量库存欢迎咨询

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