型号 功能描述 生产厂家 企业 LOGO 操作
M36DR432A

32 Mbit 2Mb x16, Dual Bank, Page Flash Memory and 4 Mbit 256K x16 SRAM, Multiple Memory Product

DESCRIPTION The M36DR432 is a multichip memory device containing a 32 Mbit boot block Flash memory and a 4 Mbit of SRAM. The device is offered in a Stacked LFBGA66 (0.8 mm pitch) package. FEATURES SUMMARY ■ SUPPLY VOLTAGE – VDDF = VDDS =1.65V to 2.2V – VPPF = 12V for Fast Program (opt

STMICROELECTRONICS

意法半导体

32 Mbit 2Mb x16, Dual Bank, Page Flash Memory and 4 Mbit 256K x16 SRAM, Multiple Memory Product

DESCRIPTION The M36DR432 is a multichip memory device containing a 32 Mbit boot block Flash memory and a 4 Mbit of SRAM. The device is offered in a Stacked LFBGA66 (0.8 mm pitch) package. FEATURES SUMMARY ■ SUPPLY VOLTAGE – VDDF = VDDS =1.65V to 2.2V – VPPF = 12V for Fast Program (opt

STMICROELECTRONICS

意法半导体

32 Mbit 2Mb x16, Dual Bank, Page Flash Memory and 4 Mbit 256K x16 SRAM, Multiple Memory Product

DESCRIPTION The M36DR432 is a multichip memory device containing a 32 Mbit boot block Flash memory and a 4 Mbit of SRAM. The device is offered in a Stacked LFBGA66 (0.8 mm pitch) package. FEATURES SUMMARY ■ SUPPLY VOLTAGE – VDDF = VDDS =1.65V to 2.2V – VPPF = 12V for Fast Program (opt

STMICROELECTRONICS

意法半导体

32 Mbit 2Mb x16, Dual Bank, Page Flash Memory and 4 Mbit 256K x16 SRAM, Multiple Memory Product

DESCRIPTION The M36DR432 is a multichip memory device containing a 32 Mbit boot block Flash memory and a 4 Mbit of SRAM. The device is offered in a Stacked LFBGA66 (0.8 mm pitch) package. FEATURES SUMMARY ■ SUPPLY VOLTAGE – VDDF = VDDS =1.65V to 2.2V – VPPF = 12V for Fast Program (opt

STMICROELECTRONICS

意法半导体

32 Mbit 2Mb x16, Dual Bank, Page Flash Memory and 4 Mbit 256K x16 SRAM, Multiple Memory Product

DESCRIPTION The M36DR432 is a multichip memory device containing a 32 Mbit boot block Flash memory and a 4 Mbit of SRAM. The device is offered in a Stacked LFBGA66 (0.8 mm pitch) package. FEATURES SUMMARY ■ SUPPLY VOLTAGE – VDDF = VDDS =1.65V to 2.2V – VPPF = 12V for Fast Program (opt

STMICROELECTRONICS

意法半导体

32 Mbit 2Mb x16, Dual Bank, Page Flash Memory and 4 Mbit 256Kb x16 SRAM, Multiple Memory Product

SUMMARY DESCRIPTION The M36DR432AD/BD is a low-voltage Multiple Memory Product which combines two memory de vices: a 32 Mbit (2Mbit x16) non-volatile Flash memory and a 4 Mbit SRAM. The memory is available in a Stacked LFBGA66 12x8mm - 8x8 active ball array, 0.8mm pitch pack age and supplied wit

STMICROELECTRONICS

意法半导体

32 Mbit 2Mb x16, Dual Bank, Page Flash Memory and 4 Mbit 256Kb x16 SRAM, Multiple Memory Product

SUMMARY DESCRIPTION The M36DR432AD/BD is a low-voltage Multiple Memory Product which combines two memory de vices: a 32 Mbit (2Mbit x16) non-volatile Flash memory and a 4 Mbit SRAM. The memory is available in a Stacked LFBGA66 12x8mm - 8x8 active ball array, 0.8mm pitch pack age and supplied wit

STMICROELECTRONICS

意法半导体

32 Mbit 2Mb x16, Dual Bank, Page Flash Memory and 4 Mbit 256Kb x16 SRAM, Multiple Memory Product

SUMMARY DESCRIPTION The M36DR432AD/BD is a low-voltage Multiple Memory Product which combines two memory de vices: a 32 Mbit (2Mbit x16) non-volatile Flash memory and a 4 Mbit SRAM. The memory is available in a Stacked LFBGA66 12x8mm - 8x8 active ball array, 0.8mm pitch pack age and supplied wit

STMICROELECTRONICS

意法半导体

32 Mbit 2Mb x16, Dual Bank, Page Flash Memory and 4 Mbit 256Kb x16 SRAM, Multiple Memory Product

SUMMARY DESCRIPTION The M36DR432AD/BD is a low-voltage Multiple Memory Product which combines two memory de vices: a 32 Mbit (2Mbit x16) non-volatile Flash memory and a 4 Mbit SRAM. The memory is available in a Stacked LFBGA66 12x8mm - 8x8 active ball array, 0.8mm pitch pack age and supplied wit

STMICROELECTRONICS

意法半导体

32 Mbit 2Mb x16, Dual Bank, Page Flash Memory and 4 Mbit 256Kb x16 SRAM, Multiple Memory Product

SUMMARY DESCRIPTION The M36DR432AD/BD is a low-voltage Multiple Memory Product which combines two memory de vices: a 32 Mbit (2Mbit x16) non-volatile Flash memory and a 4 Mbit SRAM. The memory is available in a Stacked LFBGA66 12x8mm - 8x8 active ball array, 0.8mm pitch pack age and supplied wit

STMICROELECTRONICS

意法半导体

32 Mbit 2Mb x16, Dual Bank, Page Flash Memory and 4 Mbit 256K x16 SRAM, Multiple Memory Product

DESCRIPTION The M36DR432 is a multichip memory device containing a 32 Mbit boot block Flash memory and a 4 Mbit of SRAM. The device is offered in a Stacked LFBGA66 (0.8 mm pitch) package. FEATURES SUMMARY ■ SUPPLY VOLTAGE – VDDF = VDDS =1.65V to 2.2V – VPPF = 12V for Fast Program (opt

STMICROELECTRONICS

意法半导体

32 Mbit 2Mb x16, Dual Bank, Page Flash Memory and 4 Mbit 256Kb x16 SRAM, Multiple Memory Product

STMICROELECTRONICS

意法半导体

封装/外壳:66-LFBGA 包装:托盘 描述:IC FLASH 32MBIT PARALLEL 66LFBGA 集成电路(IC) 存储器

STMICROELECTRONICS

意法半导体

32 Mbit 2Mb x16, Dual Bank, Page Flash Memory and 4 Mbit 256K x16 SRAM, Multiple Memory Product

DESCRIPTION The M36DR432 is a multichip memory device containing a 32 Mbit boot block Flash memory and a 4 Mbit of SRAM. The device is offered in a Stacked LFBGA66 (0.8 mm pitch) package. FEATURES SUMMARY ■ SUPPLY VOLTAGE – VDDF = VDDS =1.65V to 2.2V – VPPF = 12V for Fast Program (opt

STMICROELECTRONICS

意法半导体

M36DR432A产品属性

  • 类型

    描述

  • 型号

    M36DR432A

  • 制造商

    STMICROELECTRONICS

  • 制造商全称

    STMicroelectronics

  • 功能描述

    32 Mbit 2Mb x16, Dual Bank, Page Flash Memory and 4 Mbit 256K x16 SRAM, Multiple Memory Product

更新时间:2026-3-1 21:02:00
IC供应商 芯片型号 品牌 批号 封装 库存 备注 价格
ST/意法
2023+
LFBGA66
10375
专注全新正品,优势现货供应
STMicroelectronics
25+
N/A
22412
正规渠道,免费送样。支持账期,BOM一站式配齐
ST
24+
BGA
35210
一级代理/放心采购
ST/意法
22+
LFBGA66
3000
原装正品,支持实单
ST
25+
QFP
3200
全新原装、诚信经营、公司现货销售!
ST/意法
2450+
BGA
9850
只做原厂原装正品现货或订货假一赔十!
STMicroelectronics
25+
N/A
22412
正规渠道,免费送样。支持账期,BOM一站式配齐
ST
24+
BGA
30
现货
ST
23+
BGA
5000
原装正品,假一罚十
ST/意法
24+
BGA
9600
原装现货,优势供应,支持实单!

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