型号 功能描述 生产厂家&企业 LOGO 操作
M36DR432BD

32 Mbit 2Mb x16, Dual Bank, Page Flash Memory and 4 Mbit 256Kb x16 SRAM, Multiple Memory Product

SUMMARY DESCRIPTION The M36DR432AD/BD is a low-voltage Multiple Memory Product which combines two memory de vices: a 32 Mbit (2Mbit x16) non-volatile Flash memory and a 4 Mbit SRAM. The memory is available in a Stacked LFBGA66 12x8mm - 8x8 active ball array, 0.8mm pitch pack age and supplied wit

STMICROELECTRONICSSTMicroelectronics

意法半导体意法半导体集团

STMICROELECTRONICS

32 Mbit 2Mb x16, Dual Bank, Page Flash Memory and 4 Mbit 256Kb x16 SRAM, Multiple Memory Product

SUMMARY DESCRIPTION The M36DR432AD/BD is a low-voltage Multiple Memory Product which combines two memory de vices: a 32 Mbit (2Mbit x16) non-volatile Flash memory and a 4 Mbit SRAM. The memory is available in a Stacked LFBGA66 12x8mm - 8x8 active ball array, 0.8mm pitch pack age and supplied wit

STMICROELECTRONICSSTMicroelectronics

意法半导体意法半导体集团

STMICROELECTRONICS

32 Mbit 2Mb x16, Dual Bank, Page Flash Memory and 4 Mbit 256Kb x16 SRAM, Multiple Memory Product

SUMMARY DESCRIPTION The M36DR432AD/BD is a low-voltage Multiple Memory Product which combines two memory de vices: a 32 Mbit (2Mbit x16) non-volatile Flash memory and a 4 Mbit SRAM. The memory is available in a Stacked LFBGA66 12x8mm - 8x8 active ball array, 0.8mm pitch pack age and supplied wit

STMICROELECTRONICSSTMicroelectronics

意法半导体意法半导体集团

STMICROELECTRONICS

32 Mbit 2Mb x16, Dual Bank, Page Flash Memory and 4 Mbit 256Kb x16 SRAM, Multiple Memory Product

SUMMARY DESCRIPTION The M36DR432AD/BD is a low-voltage Multiple Memory Product which combines two memory de vices: a 32 Mbit (2Mbit x16) non-volatile Flash memory and a 4 Mbit SRAM. The memory is available in a Stacked LFBGA66 12x8mm - 8x8 active ball array, 0.8mm pitch pack age and supplied wit

STMICROELECTRONICSSTMicroelectronics

意法半导体意法半导体集团

STMICROELECTRONICS

32 Mbit 2Mb x16, Dual Bank, Page Flash Memory and 4 Mbit 256Kb x16 SRAM, Multiple Memory Product

SUMMARY DESCRIPTION The M36DR432AD/BD is a low-voltage Multiple Memory Product which combines two memory de vices: a 32 Mbit (2Mbit x16) non-volatile Flash memory and a 4 Mbit SRAM. The memory is available in a Stacked LFBGA66 12x8mm - 8x8 active ball array, 0.8mm pitch pack age and supplied wit

STMICROELECTRONICSSTMicroelectronics

意法半导体意法半导体集团

STMICROELECTRONICS

32 Mbit 2Mb x16, Dual Bank, Page Flash Memory and 4 Mbit 256K x16 SRAM, Multiple Memory Product

DESCRIPTION The M36DR432 is a multichip memory device containing a 32 Mbit boot block Flash memory and a 4 Mbit of SRAM. The device is offered in a Stacked LFBGA66 (0.8 mm pitch) package. FEATURES SUMMARY ■ SUPPLY VOLTAGE – VDDF = VDDS =1.65V to 2.2V – VPPF = 12V for Fast Program (opt

STMICROELECTRONICSSTMicroelectronics

意法半导体意法半导体集团

STMICROELECTRONICS

32 Mbit 2Mb x16, Dual Bank, Page Flash Memory and 4 Mbit 256Kb x16 SRAM, Multiple Memory Product

SUMMARY DESCRIPTION The M36DR432AD/BD is a low-voltage Multiple Memory Product which combines two memory de vices: a 32 Mbit (2Mbit x16) non-volatile Flash memory and a 4 Mbit SRAM. The memory is available in a Stacked LFBGA66 12x8mm - 8x8 active ball array, 0.8mm pitch pack age and supplied wit

STMICROELECTRONICSSTMicroelectronics

意法半导体意法半导体集团

STMICROELECTRONICS

32 Mbit 2Mb x16, Dual Bank, Page Flash Memory and 4 Mbit 256Kb x16 SRAM, Multiple Memory Product

SUMMARY DESCRIPTION The M36DR432AD/BD is a low-voltage Multiple Memory Product which combines two memory de vices: a 32 Mbit (2Mbit x16) non-volatile Flash memory and a 4 Mbit SRAM. The memory is available in a Stacked LFBGA66 12x8mm - 8x8 active ball array, 0.8mm pitch pack age and supplied wit

STMICROELECTRONICSSTMicroelectronics

意法半导体意法半导体集团

STMICROELECTRONICS

32 Mbit 2Mb x16, Dual Bank, Page Flash Memory and 4 Mbit 256K x16 SRAM, Multiple Memory Product

DESCRIPTION The M36DR432 is a multichip memory device containing a 32 Mbit boot block Flash memory and a 4 Mbit of SRAM. The device is offered in a Stacked LFBGA66 (0.8 mm pitch) package. FEATURES SUMMARY ■ SUPPLY VOLTAGE – VDDF = VDDS =1.65V to 2.2V – VPPF = 12V for Fast Program (opt

STMICROELECTRONICSSTMicroelectronics

意法半导体意法半导体集团

STMICROELECTRONICS

32 Mbit 2Mb x16, Dual Bank, Page Flash Memory and 4 Mbit 256K x16 SRAM, Multiple Memory Product

DESCRIPTION The M36DR432 is a multichip memory device containing a 32 Mbit boot block Flash memory and a 4 Mbit of SRAM. The device is offered in a Stacked LFBGA66 (0.8 mm pitch) package. FEATURES SUMMARY ■ SUPPLY VOLTAGE – VDDF = VDDS =1.65V to 2.2V – VPPF = 12V for Fast Program (opt

STMICROELECTRONICSSTMicroelectronics

意法半导体意法半导体集团

STMICROELECTRONICS

M36DR432BD产品属性

  • 类型

    描述

  • 型号

    M36DR432BD

  • 制造商

    STMICROELECTRONICS

  • 制造商全称

    STMicroelectronics

  • 功能描述

    32 Mbit 2Mb x16, Dual Bank, Page Flash Memory and 4 Mbit 256Kb x16 SRAM, Multiple Memory Product

更新时间:2025-8-6 14:21:00
IC供应商 芯片型号 品牌 批号 封装 库存 备注 价格
ST
22+
BGA
43167
原装正品现货
ST/意法
24+
18
原装现货假一赔十
ST/意法
2023+
TFBGA88
6893
专注全新正品,优势现货供应
ST/意法
22+
TFBGA88
3000
原装正品,支持实单
2017+
BGA
28562
只做原装正品假一赔十!
ST
0341+
BGA
1800
一级代理,专注军工、汽车、医疗、工业、新能源、电力
STMicroelectronics
2003
BGA
647
原装现货海量库存欢迎咨询
ST/意法
24+
NA/
10450
原装现货,当天可交货,原型号开票
STM
24+
BGA
581
STM
BGA
6688
15
现货库存

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