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位置：首页 > IC中文资料第6406页 > K4H511638D-UC

型号 功能描述 生产厂家 企业 LOGO 操作
K4H511638

512Mb C-die DDR SDRAM Specification

文件：212.57 Kbytes Page：24 Pages

Samsung

三星

K4H511638D-UC/LA2

512Mb D-die DDR SDRAM Specification 66 TSOP-II with Pb-Free (RoHS compliant)

Key Features • VDD : 2.5V ± 0.2V, VDDQ : 2.5V ± 0.2V for DDR266, 333 • VDD : 2.6V ± 0.1V, VDDQ : 2.6V ± 0.1V for DDR400 • Double-data-rate architecture; two data transfers per clock cycle • Bidirectional data strobe [DQS] (x4,x8) & [L(U)DQS] (x16) • Four banks operation • Dif

Samsung

三星

K4H511638D-UC/LA2

512Mb D-die DDR SDRAM Specification

Key Features • VDD : 2.5V ± 0.2V, VDDQ : 2.5V ± 0.2V for DDR266, 333 • VDD : 2.6V ± 0.1V, VDDQ : 2.6V ± 0.1V for DDR400 • Double-data-rate architecture; two data transfers per clock cycle • Bidirectional data strobe [DQS] (x4,x8) & [L(U)DQS] (x16) • Four banks operation • Dif

Samsung

三星

K4H511638D-UC/LB0

512Mb D-die DDR SDRAM Specification

Key Features • VDD : 2.5V ± 0.2V, VDDQ : 2.5V ± 0.2V for DDR266, 333 • VDD : 2.6V ± 0.1V, VDDQ : 2.6V ± 0.1V for DDR400 • Double-data-rate architecture; two data transfers per clock cycle • Bidirectional data strobe [DQS] (x4,x8) & [L(U)DQS] (x16) • Four banks operation • Dif

Samsung

三星

K4H511638D-UC/LB0

512Mb D-die DDR SDRAM Specification 66 TSOP-II with Pb-Free (RoHS compliant)

Key Features • VDD : 2.5V ± 0.2V, VDDQ : 2.5V ± 0.2V for DDR266, 333 • VDD : 2.6V ± 0.1V, VDDQ : 2.6V ± 0.1V for DDR400 • Double-data-rate architecture; two data transfers per clock cycle • Bidirectional data strobe [DQS] (x4,x8) & [L(U)DQS] (x16) • Four banks operation • Dif

Samsung

三星

K4H511638D-UC/LB3

512Mb D-die DDR SDRAM Specification 66 TSOP-II with Pb-Free (RoHS compliant)

Key Features • VDD : 2.5V ± 0.2V, VDDQ : 2.5V ± 0.2V for DDR266, 333 • VDD : 2.6V ± 0.1V, VDDQ : 2.6V ± 0.1V for DDR400 • Double-data-rate architecture; two data transfers per clock cycle • Bidirectional data strobe [DQS] (x4,x8) & [L(U)DQS] (x16) • Four banks operation • Dif

Samsung

三星

K4H511638D-UC/LB3

512Mb D-die DDR SDRAM Specification

Key Features • VDD : 2.5V ± 0.2V, VDDQ : 2.5V ± 0.2V for DDR266, 333 • VDD : 2.6V ± 0.1V, VDDQ : 2.6V ± 0.1V for DDR400 • Double-data-rate architecture; two data transfers per clock cycle • Bidirectional data strobe [DQS] (x4,x8) & [L(U)DQS] (x16) • Four banks operation • Dif

Samsung

三星

K4H511638D-UC/LCC

512Mb D-die DDR SDRAM Specification 66 TSOP-II with Pb-Free (RoHS compliant)

Key Features • VDD : 2.5V ± 0.2V, VDDQ : 2.5V ± 0.2V for DDR266, 333 • VDD : 2.6V ± 0.1V, VDDQ : 2.6V ± 0.1V for DDR400 • Double-data-rate architecture; two data transfers per clock cycle • Bidirectional data strobe [DQS] (x4,x8) & [L(U)DQS] (x16) • Four banks operation • Dif

Samsung

三星

K4H511638D-UC/LCC

512Mb D-die DDR SDRAM Specification

Key Features • VDD : 2.5V ± 0.2V, VDDQ : 2.5V ± 0.2V for DDR266, 333 • VDD : 2.6V ± 0.1V, VDDQ : 2.6V ± 0.1V for DDR400 • Double-data-rate architecture; two data transfers per clock cycle • Bidirectional data strobe [DQS] (x4,x8) & [L(U)DQS] (x16) • Four banks operation • Dif

Samsung

三星

K4H511638D-UC0

512Mb D-die DDR SDRAM Specification 66 TSOP-II with Pb-Free (RoHS compliant)

Key Features • VDD : 2.5V ± 0.2V, VDDQ : 2.5V ± 0.2V for DDR266, 333 • VDD : 2.6V ± 0.1V, VDDQ : 2.6V ± 0.1V for DDR400 • Double-data-rate architecture; two data transfers per clock cycle • Bidirectional data strobe [DQS] (x4,x8) & [L(U)DQS] (x16) • Four banks operation • Dif

Samsung

三星

K4H511638D-UC2

512Mb D-die DDR SDRAM Specification 66 TSOP-II with Pb-Free (RoHS compliant)

Key Features • VDD : 2.5V ± 0.2V, VDDQ : 2.5V ± 0.2V for DDR266, 333 • VDD : 2.6V ± 0.1V, VDDQ : 2.6V ± 0.1V for DDR400 • Double-data-rate architecture; two data transfers per clock cycle • Bidirectional data strobe [DQS] (x4,x8) & [L(U)DQS] (x16) • Four banks operation • Dif

Samsung

三星

K4H511638D-UC3

512Mb D-die DDR SDRAM Specification 66 TSOP-II with Pb-Free (RoHS compliant)

Key Features • VDD : 2.5V ± 0.2V, VDDQ : 2.5V ± 0.2V for DDR266, 333 • VDD : 2.6V ± 0.1V, VDDQ : 2.6V ± 0.1V for DDR400 • Double-data-rate architecture; two data transfers per clock cycle • Bidirectional data strobe [DQS] (x4,x8) & [L(U)DQS] (x16) • Four banks operation • Dif

Samsung

三星

K4H511638D-UCC

512Mb D-die DDR SDRAM Specification 66 TSOP-II with Pb-Free (RoHS compliant)

Key Features • VDD : 2.5V ± 0.2V, VDDQ : 2.5V ± 0.2V for DDR266, 333 • VDD : 2.6V ± 0.1V, VDDQ : 2.6V ± 0.1V for DDR400 • Double-data-rate architecture; two data transfers per clock cycle • Bidirectional data strobe [DQS] (x4,x8) & [L(U)DQS] (x16) • Four banks operation • Dif

Samsung

三星

K4H511638D-UCSLASHLA2

512Mb D-die DDR SDRAM Specification 66 TSOP-II with Pb-Free (RoHS compliant)

Key Features • VDD : 2.5V ± 0.2V, VDDQ : 2.5V ± 0.2V for DDR266, 333 • VDD : 2.6V ± 0.1V, VDDQ : 2.6V ± 0.1V for DDR400 • Double-data-rate architecture; two data transfers per clock cycle • Bidirectional data strobe [DQS] (x4,x8) & [L(U)DQS] (x16) • Four banks operation • Dif

Samsung

三星

K4H511638D-UCSLASHLA2

512Mb D-die DDR SDRAM Specification

Key Features • VDD : 2.5V ± 0.2V, VDDQ : 2.5V ± 0.2V for DDR266, 333 • VDD : 2.6V ± 0.1V, VDDQ : 2.6V ± 0.1V for DDR400 • Double-data-rate architecture; two data transfers per clock cycle • Bidirectional data strobe [DQS] (x4,x8) & [L(U)DQS] (x16) • Four banks operation • Dif

Samsung

三星

K4H511638D-UCSLASHLB0

512Mb D-die DDR SDRAM Specification 66 TSOP-II with Pb-Free (RoHS compliant)

Key Features • VDD : 2.5V ± 0.2V, VDDQ : 2.5V ± 0.2V for DDR266, 333 • VDD : 2.6V ± 0.1V, VDDQ : 2.6V ± 0.1V for DDR400 • Double-data-rate architecture; two data transfers per clock cycle • Bidirectional data strobe [DQS] (x4,x8) & [L(U)DQS] (x16) • Four banks operation • Dif

Samsung

三星

K4H511638D-UCSLASHLB0

512Mb D-die DDR SDRAM Specification

Key Features • VDD : 2.5V ± 0.2V, VDDQ : 2.5V ± 0.2V for DDR266, 333 • VDD : 2.6V ± 0.1V, VDDQ : 2.6V ± 0.1V for DDR400 • Double-data-rate architecture; two data transfers per clock cycle • Bidirectional data strobe [DQS] (x4,x8) & [L(U)DQS] (x16) • Four banks operation • Dif

Samsung

三星

K4H511638D-UCSLASHLB3

512Mb D-die DDR SDRAM Specification 66 TSOP-II with Pb-Free (RoHS compliant)

Key Features • VDD : 2.5V ± 0.2V, VDDQ : 2.5V ± 0.2V for DDR266, 333 • VDD : 2.6V ± 0.1V, VDDQ : 2.6V ± 0.1V for DDR400 • Double-data-rate architecture; two data transfers per clock cycle • Bidirectional data strobe [DQS] (x4,x8) & [L(U)DQS] (x16) • Four banks operation • Dif

Samsung

三星

K4H511638D-UCSLASHLB3

512Mb D-die DDR SDRAM Specification

Key Features • VDD : 2.5V ± 0.2V, VDDQ : 2.5V ± 0.2V for DDR266, 333 • VDD : 2.6V ± 0.1V, VDDQ : 2.6V ± 0.1V for DDR400 • Double-data-rate architecture; two data transfers per clock cycle • Bidirectional data strobe [DQS] (x4,x8) & [L(U)DQS] (x16) • Four banks operation • Dif

Samsung

三星

K4H511638D-UCSLASHLCC

512Mb D-die DDR SDRAM Specification 66 TSOP-II with Pb-Free (RoHS compliant)

Key Features • VDD : 2.5V ± 0.2V, VDDQ : 2.5V ± 0.2V for DDR266, 333 • VDD : 2.6V ± 0.1V, VDDQ : 2.6V ± 0.1V for DDR400 • Double-data-rate architecture; two data transfers per clock cycle • Bidirectional data strobe [DQS] (x4,x8) & [L(U)DQS] (x16) • Four banks operation • Dif

Samsung

三星

K4H511638D-UCSLASHLCC

512Mb D-die DDR SDRAM Specification

Key Features • VDD : 2.5V ± 0.2V, VDDQ : 2.5V ± 0.2V for DDR266, 333 • VDD : 2.6V ± 0.1V, VDDQ : 2.6V ± 0.1V for DDR400 • Double-data-rate architecture; two data transfers per clock cycle • Bidirectional data strobe [DQS] (x4,x8) & [L(U)DQS] (x16) • Four banks operation • Dif

Samsung

三星

K4H511638B-TC/LCC

512Mb B-die DDR SDRAM Specification

Key Features • VDD : 2.5V ± 0.2V, VDDQ : 2.5V ± 0.2V for DDR266, 333 • VDD : 2.6V ± 0.1V, VDDQ : 2.6V ± 0.1V for DDR400 • Double-data-rate architecture; two data transfers per clock cycle • Bidirectional data strobe [DQS] (x4,x8) & [L(U)DQS] (x16) • Four banks operation • Differential cl

Samsung

三星

K4H511638B-G

512Mb B-die DDR SDRAM Specification

文件：392.89 Kbytes Page：24 Pages

Samsung

三星

K4H511638B-GC/LCC

512Mb B-die DDR SDRAM Specification

文件：392.89 Kbytes Page：24 Pages

Samsung

三星

K4H511638B-GCSLASHLCC

512Mb B-die DDR SDRAM Specification

文件：392.89 Kbytes Page：24 Pages

Samsung

三星

K4H511638D-UC产品属性

  • 类型

    描述

  • 型号

    K4H511638D-UC

  • 制造商

    SAMSUNG

  • 制造商全称

    Samsung semiconductor

  • 功能描述

    512Mb D-die DDR SDRAM Specification 66 TSOP-II with Pb-Free(RoHS compliant)

K4H511638D-UC供应商更多...

更新时间：2025-12-26 19:04:00
IC供应商 芯片型号 品牌 批号 封装 库存 备注 价格
中天科工半导体（深圳）有限公司
K4H511638J-LCCC
SAMSUNG/三星
25+
TSSOP66
12496
SAMSUNG/三星原装正品K4H511638J-LCCC即刻询购立享优惠#长期有货
询价
深圳市科恒伟业电子有限公司
K4H511638J-LCCC
SAMSUNG
2430+
TSSOP
8540
只做原装正品假一赔十为客户做到零风险!!
询价
深圳市鸿昌盛电子科技有限公司
K4H511638D-UCC
SAMSUNG
25+
480
公司现货库存
询价
标准国际(香港)有限公司
K4H511638D-UCCC
SAMSUNG
25+
ROHS
12
全新原装!优势库存热卖中!
询价
深圳市拓亿芯电子有限公司
K4H511638C-UCCC
SAMSUNG/三星
25+
TSOP-66
25000
全新原装现货,假一赔十
询价
深圳市明嘉莱科技有限公司
K4H511638J-LCCC
SAMSUNG/三星
13+
明嘉莱只做原装正品现货
2510000
TSOP
询价
深圳市凯睿晟科技有限公司
K4H511638J-LCCC
SAMSUNG
2024+
FBGA
42
凯睿晟只做原装正品 实单可谈!
询价
深圳市力拓辉电子有限公司
K4H511638D-UCB3
SAMSUNG
21+
TSOP66
5000
全新原装 鄙视假货
询价
深圳市坤融电子科技有限公司
K4H511638C-UCB3
SAMSUNG/三星
2025+
TSOP
4950
原装进口价格优 请找坤融电子!
询价
深圳市赛尔通科技有限公司
K4H511638D-UCB3
K4H511638G-L
23+
5000
原装现货 本公司为一般纳税人,可开17%增值税票
询价

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