型号 功能描述 生产厂家 企业 LOGO 操作

4Gb B-die DDR3 SDRAM Olny x16

The 4Gb DDR3 SDRAM B-die is organized as a 32Mbit x 16 I/Os x 8banks, device. This synchronous device achieves high speed double-data-rate transfer rates of up to 2133Mb/sec/pin (DDR3-2133) for general applications. Key Features • JEDEC standard 1.5V(1.425V~1.575V) • VDDQ = 1.5V(1.425V~1.575V)

SAMSUNG

三星

4Gb B-die DDR3 SDRAM Olny x16

The 4Gb DDR3 SDRAM B-die is organized as a 32Mbit x 16 I/Os x 8banks, device. This synchronous device achieves high speed double-data-rate transfer rates of up to 2133Mb/sec/pin (DDR3-2133) for general applications. Key Features • JEDEC standard 1.5V(1.425V~1.575V) • VDDQ = 1.5V(1.425V~1.575V)

SAMSUNG

三星

4Gb B-die DDR3 SDRAM Olny x16

The 4Gb DDR3 SDRAM B-die is organized as a 32Mbit x 16 I/Os x 8banks, device. This synchronous device achieves high speed double-data-rate transfer rates of up to 2133Mb/sec/pin (DDR3-2133) for general applications. Key Features • JEDEC standard 1.5V(1.425V~1.575V) • VDDQ = 1.5V(1.425V~1.575V)

SAMSUNG

三星

4Gb B-die DDR3 SDRAM Olny x16

The 4Gb DDR3 SDRAM B-die is organized as a 32Mbit x 16 I/Os x 8banks, device. This synchronous device achieves high speed double-data-rate transfer rates of up to 2133Mb/sec/pin (DDR3-2133) for general applications. Key Features • JEDEC standard 1.5V(1.425V~1.575V) • VDDQ = 1.5V(1.425V~1.575V)

SAMSUNG

三星

4Gb B-die DDR3 SDRAM Olny x16

The 4Gb DDR3 SDRAM B-die is organized as a 32Mbit x 16 I/Os x 8banks, device. This synchronous device achieves high speed double-data-rate transfer rates of up to 2133Mb/sec/pin (DDR3-2133) for general applications. Key Features • JEDEC standard 1.5V(1.425V~1.575V) • VDDQ = 1.5V(1.425V~1.575V)

SAMSUNG

三星

4Gb B-die DDR3 SDRAM Olny x16

The 4Gb DDR3 SDRAM B-die is organized as a 32Mbit x 16 I/Os x 8banks, device. This synchronous device achieves high speed double-data-rate transfer rates of up to 2133Mb/sec/pin (DDR3-2133) for general applications. Key Features • JEDEC standard 1.5V(1.425V~1.575V) • VDDQ = 1.5V(1.425V~1.575V)

SAMSUNG

三星

PRODUCT SELECTION GUIDE Displays, Memory and Storage

Samsung continues to lead the industry with the broadest portfolio of memory products and display technology. Its display panels, DRAM, flash, mobile and graphics memory are found in many computers – from ultrabooks to powerful servers – and in a wide range of handheld devices such as smartphon

SAMSUNG

三星

DDR3 SDRAM Memory

文件:1.38881 Mbytes Page:32 Pages

SAMSUNG

三星

K4B4G1646B-HC产品属性

  • 类型

    描述

  • 型号

    K4B4G1646B-HC

  • 制造商

    Samsung Semiconductor

更新时间:2026-3-4 19:08:00
IC供应商 芯片型号 品牌 批号 封装 库存 备注 价格
SAMSUNG
存储器
BGA
40278
SAMSUNG存储芯片K4B4G1646B-HCMA即刻询购立享优惠#长期有货
SAMSUNG/三星
24+
FBGA96
11200
原装现货
SAMSUNG
2430+
BGA
8540
只做原装正品假一赔十为客户做到零风险!!
SAMSUNG/三星
原厂封装
9800
原装进口公司现货假一赔百
SAMSUNG(三星)
23+
NA
20094
正纳10年以上分销经验原装进口正品做服务做口碑有支持
SAMSUNG
26+
FBGA96
86720
全新原装正品价格最实惠 假一赔百
SAMSUNG/三星
2026+
BGA
996880
只做原装,欢迎来电资询
SAMSUNG/三星
25+
BGA
880000
明嘉莱只做原装正品现货
SAMSUNG(三星)
25+
N/A
21000
原装正品现货,原厂订货,可支持含税原型号开票。
SAMSUNG/三星
22+
BGA
12245
现货,原厂原装假一罚十!

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