型号 功能描述 生产厂家&企业 LOGO 操作
K4B1G0846D

1Gb D-die DDR3 SDRAM Specification

The 1Gb DDR3 SDRAM D-die is organized as a 32Mbit x 4 I/Os x 8banks, 16Mbit x 8 I/Os x 8banks or 8Mbit x 16 I/Os x 8 banks device. This synchronous device achieves high speed double-data-rate transfer rates of up to 1600Mb/sec/pin (DDR3-1600) for general applications.

SamsungSamsung semiconductor

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Samsung

1Gb D-die DDR3 SDRAM Specification

The 1Gb DDR3 SDRAM D-die is organized as a 32Mbit x 4 I/Os x 8banks, 16Mbit x 8 I/Os x 8banks or 8Mbit x 16 I/Os x 8 banks device. This synchronous device achieves high speed double-data-rate transfer rates of up to 1600Mb/sec/pin (DDR3-1600) for general applications.

SamsungSamsung semiconductor

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Samsung

1Gb D-die DDR3 SDRAM Specification

The 1Gb DDR3 SDRAM D-die is organized as a 32Mbit x 4 I/Os x 8banks, 16Mbit x 8 I/Os x 8banks or 8Mbit x 16 I/Os x 8 banks device. This synchronous device achieves high speed double-data-rate transfer rates of up to 1600Mb/sec/pin (DDR3-1600) for general applications.

SamsungSamsung semiconductor

三星三星半导体

Samsung

1Gb D-die DDR3 SDRAM Specification

The 1Gb DDR3 SDRAM D-die is organized as a 32Mbit x 4 I/Os x 8banks, 16Mbit x 8 I/Os x 8banks or 8Mbit x 16 I/Os x 8 banks device. This synchronous device achieves high speed double-data-rate transfer rates of up to 1600Mb/sec/pin (DDR3-1600) for general applications.

SamsungSamsung semiconductor

三星三星半导体

Samsung

Consumer Memory

SDRAM Product Guide Memory Division November 2007

SamsungSamsung semiconductor

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Samsung

DDR3 SDRAM Memory

DDR3 SDRAM Specification DDR3 SDRAM Memory

SamsungSamsung semiconductor

三星三星半导体

Samsung

DDR3 SDRAM Memory

DDR3 SDRAM Specification DDR3 SDRAM Memory

SamsungSamsung semiconductor

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Samsung

1Gb G-die DDR3 SDRAM

1Gb G-die DDR3 SDRAM 78FBGA with Lead-Free & Halogen-Free (RoHS compliant) The 1Gb DDR3 SDRAM G-die is organized as a 32Mbit x 4 I/Os x 8banks, 16Mbit x 8 I/Os x 8banks device. This synchronous device achieves high speed double-data-rate transfer rates of up to 1866Mb/sec/pin (DDR3- 1866) for

SamsungSamsung semiconductor

三星三星半导体

Samsung

K4B1G0846D产品属性

  • 类型

    描述

  • 型号

    K4B1G0846D

  • 制造商

    SAMSUNG

  • 制造商全称

    Samsung semiconductor

  • 功能描述

    1Gb D-die DDR3 SDRAM Specification

更新时间:2025-8-5 18:20:00
IC供应商 芯片型号 品牌 批号 封装 库存 备注 价格
SAMSUNG
1844+
FBGA
6528
只做原装正品假一赔十为客户做到零风险!!
SAMSUNG/三星
24+
BGA
20000
不忘初芯-只做原装正品
SAMSUNG
23+
NA
1763
专做原装正品,假一罚百!
SAMSUNG
18+
BGA
85600
保证进口原装可开17%增值税发票
SAMSUNG/三星
22+
FBGA-82
8000
原装正品支持实单
SAMSUNG
BGA
68500
一级代理 原装正品假一罚十价格优势长期供货
SAMSUNG
6000
面议
19
BGAPB
SAMSUNG/三星
08+PBF
BGA
428
原装现货
SAMSUNG/三星
22+
BGA
30872
原装正品现货
SAMSUNG
FBGA
1023
正品原装--自家现货-实单可谈

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