位置:首页 > IC中文资料第6197页 > K4B1G0846G
型号 | 功能描述 | 生产厂家 企业 | LOGO | 操作 |
---|---|---|---|---|
K4B1G0846G | 1Gb G-die DDR3 SDRAM 1Gb G-die DDR3 SDRAM 78FBGA with Lead-Free & Halogen-Free (RoHS compliant) The 1Gb DDR3 SDRAM G-die is organized as a 32Mbit x 4 I/Os x 8banks, 16Mbit x 8 I/Os x 8banks device. This synchronous device achieves high speed double-data-rate transfer rates of up to 1866Mb/sec/pin (DDR3- 1866) for | Samsung 三星 | ||
K4B1G0846G | DDR3 SDRAM Memory 文件:1.38881 Mbytes Page:32 Pages | Samsung 三星 | ||
PRODUCT SELECTION GUIDE Displays, Memory and Storage Samsung continues to lead the industry with the broadest portfolio of memory products and display technology. Its display panels, DRAM, flash, mobile and graphics memory are found in many computers – from ultrabooks to powerful servers – and in a wide range of handheld devices such as smartphon | Samsung 三星 | |||
1Gb G-die DDR3 SDRAM 1Gb G-die DDR3 SDRAM 78FBGA with Lead-Free & Halogen-Free (RoHS compliant) The 1Gb DDR3 SDRAM G-die is organized as a 32Mbit x 4 I/Os x 8banks, 16Mbit x 8 I/Os x 8banks device. This synchronous device achieves high speed double-data-rate transfer rates of up to 1866Mb/sec/pin (DDR3- 1866) for | Samsung 三星 | |||
1Gb G-die DDR3 SDRAM 1Gb G-die DDR3 SDRAM 78FBGA with Lead-Free & Halogen-Free (RoHS compliant) The 1Gb DDR3 SDRAM G-die is organized as a 32Mbit x 4 I/Os x 8banks, 16Mbit x 8 I/Os x 8banks device. This synchronous device achieves high speed double-data-rate transfer rates of up to 1866Mb/sec/pin (DDR3- 1866) for | Samsung 三星 | |||
1Gb G-die DDR3 SDRAM 1Gb G-die DDR3 SDRAM 78FBGA with Lead-Free & Halogen-Free (RoHS compliant) The 1Gb DDR3 SDRAM G-die is organized as a 32Mbit x 4 I/Os x 8banks, 16Mbit x 8 I/Os x 8banks device. This synchronous device achieves high speed double-data-rate transfer rates of up to 1866Mb/sec/pin (DDR3- 1866) for | Samsung 三星 | |||
1Gb G-die DDR3 SDRAM 1Gb G-die DDR3 SDRAM 78FBGA with Lead-Free & Halogen-Free (RoHS compliant) The 1Gb DDR3 SDRAM G-die is organized as a 32Mbit x 4 I/Os x 8banks, 16Mbit x 8 I/Os x 8banks device. This synchronous device achieves high speed double-data-rate transfer rates of up to 1866Mb/sec/pin (DDR3- 1866) for | Samsung 三星 | |||
PRODUCT SELECTION GUIDE Displays, Memory and Storage Samsung continues to lead the industry with the broadest portfolio of memory products and display technology. Its display panels, DRAM, flash, mobile and graphics memory are found in many computers – from ultrabooks to powerful servers – and in a wide range of handheld devices such as smartphon | Samsung 三星 | |||
1Gb D-die DDR3 SDRAM Specification The 1Gb DDR3 SDRAM D-die is organized as a 32Mbit x 4 I/Os x 8banks, 16Mbit x 8 I/Os x 8banks or 8Mbit x 16 I/Os x 8 banks device. This synchronous device achieves high speed double-data-rate transfer rates of up to 1600Mb/sec/pin (DDR3-1600) for general applications. | Samsung 三星 | |||
Consumer Memory SDRAM Product Guide Memory Division November 2007 | Samsung 三星 | |||
DDR3 SDRAM Memory DDR3 SDRAM Specification DDR3 SDRAM Memory | Samsung 三星 | |||
DDR3 SDRAM Memory DDR3 SDRAM Specification DDR3 SDRAM Memory | Samsung 三星 |
K4B1G0846G产品属性
- 类型
描述
- 型号
K4B1G0846G
- 制造商
SAMSUNG
- 制造商全称
Samsung semiconductor
- 功能描述
1Gb G-die DDR3 SDRAM
IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
---|---|---|---|---|---|---|---|
SAMSUNG |
24+ |
FBGA |
30000 |
公司新到进口原装现货假一赔十 |
|||
SAMSUNG/三星 |
24+ |
NA/ |
3437 |
原装现货,当天可交货,原型号开票 |
|||
SAMSUNG |
2016+ |
BGA |
5000 |
全新原装现货,只售原装,假一赔十! |
|||
SAMSUNG |
24+ |
BGA |
80000 |
只做自己库存 全新原装进口正品假一赔百 可开13%增 |
|||
SAMSUNG/三星 |
25+ |
BGA |
54648 |
百分百原装现货 实单必成 |
|||
Samsung |
24+ |
BGA |
20000 |
全新原厂原装,进口正品现货,正规渠道可含税!! |
|||
SEC |
24+ |
FBGA |
23000 |
免费送样原盒原包现货一手渠道联系 |
|||
SAMSUNG/三星 |
21+ |
FBGA78 |
880000 |
明嘉莱只做原装正品现货 |
|||
SAMSUNG |
22+ |
BGA |
8000 |
原装正品支持实单 |
|||
TI/德州仪器 |
24+ |
BGA |
7671 |
原装正品.优势专营 |
K4B1G0846G芯片相关品牌
K4B1G0846G规格书下载地址
K4B1G0846G参数引脚图相关
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K4B1G0846G数据表相关新闻
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DdatasheetPDF页码索引
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