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型号 功能描述 生产厂家 企业 LOGO 操作

SWITCHING N-CHANNEL POWER MOSFET

DESCRIPTION The 2SK3113 is N-channel DMOSFET device that features a low gate charge and excellent switching characteristic, and designed for high voltage applications such as switching power supply, AC adapter. FEATURES •Low on-state resistance RDS(on)= 4.4 ΩMAX. (VGS= 10 V, ID= 1.0

NEC

瑞萨

MOS FIELD EFFECT TRANSISTOR

DESCRIPTION The 2SK3113B is N-channel MOS FET device that features a low gate charge and excellent switching characteristics, and designed for high voltage applications such as switching power supply, AC adapter. FEATURES • Low on-state resistance RDS(on)= 4.4 ΩMAX. (VGS= 10 V, ID= 1.0 A)

NEC

瑞萨

N-Channel 650 V (D-S) MOSFET

FEATURES • Low Gate Charge Qg Results in Simple Drive Requirement • Improved Gate, Avalanche and Dynamic dV/dt Ruggedness • Fully Characterized Capacitance and Avalanche Voltage and Current • Compliant to RoHS directive 2002/95/EC

VBSEMI

微碧半导体

Power MOSFET

FEATURES • Low Gate Charge Qg Results in Simple Drive Requirement • Improved Gate, Avalanche and Dynamic dV/dt Ruggedness • Fully Characterized Capacitance and Avalanche Voltage and Current • Compliant to RoHS directive 2002/95/EC

VBSEMI

微碧半导体

N-Channel 650 V (D-S) MOSFET

FEATURES • Low Gate Charge Qg Results in Simple Drive Requirement • Improved Gate, Avalanche and Dynamic dV/dt Ruggedness • Fully Characterized Capacitance and Avalanche Voltage and Current • Compliant to RoHS directive 2002/95/EC

VBSEMI

微碧半导体

N-Channel 650 V (D-S) MOSFET

FEATURES • Low Gate Charge Qg Results in Simple Drive Requirement • Improved Gate, Avalanche and Dynamic dV/dt Ruggedness • Fully Characterized Capacitance and Avalanche Voltage and Current • Compliant to RoHS directive 2002/95/EC

VBSEMI

微碧半导体

SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE

Description\nThe 2SK3115 is N-Channel DMOS FET device that features a low gate charge and excellent switching\ncharacteristics, and designed for high voltage applications such as switching power supply, AC adapter. • Low gate charge\n  QG = 26 nC TYP. (VDD = 450 V, VGS = 10 V, ID = 6.0 A)\n• Gate voltage rating ±30 V\n• Low on-state resistance\n  RDS(on) = 1.2 Ω MAX. (VGS = 10 V, ID = 3.0 A)\n• Avalanche capability ratings;

RENESAS

瑞萨

N-Channel 650V (D-S) Power MOSFET

FEATURES • Low figure-of-merit (FOM) Ron x Qg • Low input capacitance (Ciss) • Reduced switching and conduction losses • Ultra low gate charge (Qg) • Avalanche energy rated (UIS) APPLICATIONS • Server and telecom power supplies • Switch mode power supplies (SMPS) • Power factor correction

VBSEMI

微碧半导体

MOS FIELD EFFECT TRANSISTOR

SWITCHING N-CHANNEL POWER MOS FET DESCRIPTION The 2SK3115B is N-Channel MOS FET device that features a low gate charge and excellent switching characteristics, and designed for high voltage applications such as switching power supply, AC adapter. FEATURES • Low gate charge QG = 21 nC

RENESAS

瑞萨

SWITCHING N-CHANNEL POWER MOS FET

DESCRIPTION The 2SK3116 is N-channel DMOS FET device that features a low gate charge and excellent switching characteristics, and designed for high voltage applications such as switching power supply, AC adapter. FEATURES • Low gate charge QG= 26 nC TYP. (ID= 7.5 A, VDD= 450 V,

NEC

瑞萨

T O TA L L A M P S O LU T I O N S

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ETCList of Unclassifed Manufacturers

未分类制造商

PRECISION VOLTAGE COMPARATOR

■ GENERAL DESCRIPTION The NJM311 is a voltage comparator that has low input currents. It is also designed to operate covering a wider range of supply voltages from Standard ±15V op amp supplies down to the single 5V supply used for IC logic. Its output is compatible with RTL,DTL and TTL as well a

NJRC

日本无线

PRECISION VOLTAGE COMPARATOR

■ GENERAL DESCRIPTION The NJM311 is a voltage comparator that has low input currents. It is also designed to operate covering a wider range of supply voltages from Standard ±15V op amp supplies down to the single 5V supply used for IC logic. Its output is compatible with RTL,DTL and TTL as well a

NJRC

日本无线

PRECISION VOLTAGE COMPARATOR

■ GENERAL DESCRIPTION The NJM311 is a voltage comparator that has low input currents. It is also designed to operate covering a wider range of supply voltages from Standard ±15V op amp supplies down to the single 5V supply used for IC logic. Its output is compatible with RTL,DTL and TTL as well a

NJRC

日本无线

PRECISION VOLTAGE COMPARATORS

SEMICONDUCTOR SELECTION GUIDE Microcomputer IC Memory Semi-Custom IC Particular Purpose IC General Purpose Linear IC Transistor / Diode / Thyristor Microwave Device / Consumer Use High Frequency Device Optical Device Packages Index (Quick Reference by Type N

NEC

瑞萨

PRECISION VOLTAGE COMPARATORS

SEMICONDUCTOR SELECTION GUIDE Microcomputer IC Memory Semi-Custom IC Particular Purpose IC General Purpose Linear IC Transistor / Diode / Thyristor Microwave Device / Consumer Use High Frequency Device Optical Device Packages Index (Quick Reference by Type N

NEC

瑞萨

K311产品属性

  • 类型

    描述

  • 型号

    K311

  • 制造商

    NORTH SAFETY PRODUCTS

  • 功能描述

    GLOVE DOTS-GRIP SZ10

  • 制造商

    North Safety Products USA

  • 功能描述

    GLOVE, DOTS-GRIP, SZ10

  • 制造商

    NORTH SAFETY PRODUCTS

  • 功能描述

    GLOVE, DOTS-GRIP, SZ10; Safety

  • Category

    CE, EN420; Glove

  • Style

    Knit Wrist; Glove

  • Size

    10; Glove

  • Colour

    White; Glove

  • Material

    Polyester;

  • Colour

    Black/White; Design

  • Category

    Simple;

  • Material

    Cotton/Polyester;

  • Size

    10 ;RoHS

  • Compliant

    NA

更新时间:2026-5-24 15:01:00
IC供应商 芯片型号 品牌 批号 封装 库存 备注 价格
NEC
23+
SOT-263
7000
NEC
22+
SOT-263
6000
十年配单,只做原装
NEC
23+
SOT-263
8000
只做原装现货
NEC
24+
TO-220
5000
只做原装公司现货
NEC
25+
SOT-263
10000
原装现货假一罚十

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