DESCRIPTION

The 2SK3116 is N-channel DMOS FET device that features a low gate charge and excellent switching characteristics, and designed for high voltage applications such as switching power supply, AC adapter.

FEATURES

• Low gate charge

QG= 26 nC TYP. (ID= 7.5 A, VDD= 450 V, VGS= 10 V)

• Gate voltage rating ±30 V

• Low on-state resistance

RDS(on)= 1.2 Ω MAX. (VGS= 10 V, ID= 3.75 A)

• Avalanche capability ratings