DESCRIPTION

The 2SK3113B is N-channel MOS FET device that features a low gate charge and excellent switching characteristics, and designed for high voltage applications such as switching power supply, AC adapter.

FEATURES

• Low on-state resistance

RDS(on)= 4.4 ΩMAX. (VGS= 10 V, ID= 1.0 A)

• Low gate charge

QG= 7.9 nC TYP. (VDD= 450 V, VGS= 10 V, ID= 2.0 A)

• Gate voltage rating : ±30 V

• Avalanche capability ratings