MOS FIELD EFFECT TRANSISTOR

DESCRIPTION The 2SK3113B is N-channel MOS FET device that features a low gate charge and excellent switching characteristics, and designed for high voltage applications such as switching power supply, AC adapter. FEATURES • Low on-state resistance RDS(on)= 4.4 ΩMAX. (VGS= 10 V, ID= 1.0 A)

N-Channel 650 V (D-S) MOSFET

FEATURES • Low Gate Charge Qg Results in Simple Drive Requirement • Improved Gate, Avalanche and Dynamic dV/dt Ruggedness • Fully Characterized Capacitance and Avalanche Voltage and Current • Compliant to RoHS directive 2002/95/EC

HALL-EFFECT SWITCHES

HALL-EFFECT SWITCHES

FLAT WASHERS NYLON FIBRE

[KEYSTONE] NYLON RETAINING WASHERS FLAT WASHERS – NYLON & FIBRE INTERNAL TOOTH WASHERS STEEL LOCK WASHERS STEEL FLAT WASHERS

WASHERS

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100 KHz Differential Bandpass

文件：225.09 Kbytes Page：3 Pages

3/8 Square Drive Sockets, SAE

文件：158.63 Kbytes Page：3 Pages