MOS FIELD EFFECT TRANSISTOR

DESCRIPTION The 2SK3113B is N-channel MOS FET device that features a low gate charge and excellent switching characteristics, and designed for high voltage applications such as switching power supply, AC adapter. FEATURES • Low on-state resistance RDS(on)= 4.4 ΩMAX. (VGS= 10 V, ID= 1.0 A)

N-Channel 650 V (D-S) MOSFET

FEATURES • Low Gate Charge Qg Results in Simple Drive Requirement • Improved Gate, Avalanche and Dynamic dV/dt Ruggedness • Fully Characterized Capacitance and Avalanche Voltage and Current • Compliant to RoHS directive 2002/95/EC

EPITAXIAL PLANAR NPN TRANSISTOR (GENERAL PURPOSE, SWITCHING)

GENERAL PURPOSE APPLICATION. SWITCHING APPLICATION. FEATURE • High DC Current Gain : hFE=600 ~ 3600. • Small Package.

FM IF DETECTOR IC FOR CORDLESS TELEPHONE

Toshiba TA31136, TA31136F, TA31136FN Datasheet Pinouts Low operation voltage FM IF detector IC. This IC is suitable for cordless telephone.

MEASUREMENT INSTRUMENTS LOGIC IC TESTERS MEMORY TESTERS BOARD TESTERS SCANNERS

MEASUREMENT INSTRUMENTS LOGIC IC TESTERS / MEMORY TESTERS BOARD TESTERS / SCANNERS The TOSHIBA TLP3113 Mini-flat photorelay is a small-outline photorelay, suitable for surface-mount assembly. The TLP3113 consists of an infrared-emitting diode optically coupled to a photo-MOS FET and housed in a

FET BIAS CONTROLLER WITH POLARISATION SWITCH AND TONE DETECTION

DEVICE DESCRIPTION The ZNBG series of devices are designed to meet the bias requirements of GaAs and HEMT FETs commonly used in satellite receiver LNBs, PMR cellular telephones etc. with a minimum of external components. FEATURES • Provides bias for GaAs and HEMT FETs • Drives up to three FETs

Vertical Driver LSI for Video Camera CCD Area Image Sensor

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