位置：首页 > IC中文资料第4270页 > IXTY1N80P
| 型号 | 功能描述 | 生产厂家 企业 | LOGO | 操作 |
|---|---|---|---|---|
IXTY1N80P | N-Channel Enhancement Mode Avalanche Rated 文件：167.56 Kbytes Page：5 Pages | IXYS 艾赛斯 |   | |
IXTY1N80P | N通道标准MOSFET | Littelfuse 力特 | | |
800V N-Channel MOSFET Description This N-Channel enhancement mode power MOSFET is produced using Fairchild Semiconductor®’s proprietary planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to reduce on-state resistance, and to provide superior switching performance and high a | FairchildFairchild Semiconductor 仙童半导体飞兆/仙童半导体公司 | | ||
1.0 Amps, 800 Volts N-CHANNEL POWER MOSFET 文件：163.67 Kbytes Page：6 Pages | UTC 友顺 | | ||
1A, 800V N-CHANNEL POWER MOSFET 文件：182.22 Kbytes Page：6 Pages | UTC 友顺 | | ||
N-CHANNEL MOSFET in a TO-92 Plastic Package 文件：991.35 Kbytes Page：6 Pages | FOSHAN 蓝箭电子 | | ||
Rectifier Diode 文件：140.44 Kbytes Page：4 Pages | SHINDENGEN | |
IXTY1N80P产品属性
- 类型
描述
- 型号
IXTY1N80P
- 功能描述
MOSFET POLAR MOSFET WITH REDUCED RDS 800V 1A
- RoHS
否
- 制造商
STMicroelectronics
- 晶体管极性
N-Channel
- 汲极/源极击穿电压
650 V
- 闸/源击穿电压
25 V
- 漏极连续电流
130 A 电阻汲极/源极
- RDS（导通）
0.014 Ohms
- 配置
Single
- 安装风格
Through Hole
- 封装/箱体
Max247
- 封装
Tube
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
IXYS/艾赛斯 |
2517+ |
TO-252 |
8850 |
只做原装正品现货或订货假一赔十! |
|||
24+ |
N/A |
62000 |
一级代理-主营优势-实惠价格-不悔选择 |
||||
IXYS/艾赛斯 |
20+ |
TO-252 |
32500 |
现货很近!原厂很远!只做原装 |
|||
IXYS(艾赛斯) |
23+ |
N/A |
7500 |
IXYS(艾赛斯)全系列在售 |
|||
IXYS |
22+ |
TO2523 DPak (2 Leads + Tab) SC |
9000 |
原厂渠道,现货配单 |
|||
Littelfuse/IXYS |
24+ |
TO-252AA |
9555 |
支持大陆交货,美金交易。原装现货库存。 |
|||
NK/南科功率 |
2025+ |
TO-252 |
986966 |
国产 |
|||
IXYS/艾赛斯 |
24+ |
TO-252 |
30000 |
只做正品原装现货 |
|||
I |
23+ |
TO-252 |
6000 |
原装正品，支持实单 |
|||
IXYS |
23+ |
TO-252 |
11846 |
一级代理商现货批发,原装正品,假一罚十 |
IXTY1N80P规格书下载地址
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IXTY1N80P数据表相关新闻
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DdatasheetPDF页码索引
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