TMOS POWER FET 1.0 AMPERES 800 VOLTS RDS(on) = 12 OHMS

TMOS E-FET Power Field Effect Transistor N–Channel Enhancement–Mode Silicon Gate This high voltage MOSFET uses an advanced termination scheme to provide enhanced voltage–blocking capability without degrading performance over time. In addition, this advanced TMOS E–FET is designed to withstand hi

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current -ID= 1A@ TC=25℃ ·Drain Source Voltage -VDSS= 800V(Min) ·Static Drain-Source On-Resistance -RDS(on) = 12Ω(Max)@VGS= 10V DESCRIPTION ·Motor drive, DC-DC converter, power switch and solenoid drive.

TMOS POWER FET 1.0 AMPERES 800 VOLTS RDS(on) = 12 OHMS

800V N-Channel MOSFET

Description This N-Channel enhancement mode power MOSFET is produced using Fairchild Semiconductor®’s proprietary planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to reduce on-state resistance, and to provide superior switching performance and high a

1.0 Amps, 800 Volts N-CHANNEL POWER MOSFET

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1A, 800V N-CHANNEL POWER MOSFET

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N-CHANNEL MOSFET in a TO-92 Plastic Package

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Rectifier Diode

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