PolarHVTM Power MOSFET N-Channel Enhancement Mode Avalanche Rated

N-Channel Enhancement Mode Avalanche Rated Features l Fast Recovery diode l Unclamped Inductive Switching (UIS) rated l International standard packages l Low package inductance - easy to drive and to protect

isc N-Channel MOSFET Transistor

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N-Channel: Standard Power MOSFETs

PolarHVTM Power MOSFET N-Channel Enhancement Mode Avalanche Rated

N-Channel Enhancement Mode Avalanche Rated Features l Fast Recovery diode l Unclamped Inductive Switching (UIS) rated l International standard packages l Low package inductance - easy to drive and to protect

BIDW30N60T Insulated Gate Bipolar Transistor (IGBT)

General Information The Bourns® Model BIDW30N60T IGBT device combines technology from a MOS gate and a bipolar transistor for an optimum component for high voltage and high current applications. This device uses Trench-Gate Field-Stop technology providing greater control of dynamic characteris

Low Loss DuoPack: IGBT in TRENCHSTOPTM and Fieldstop technology with soft, fast recovery antiparallel Emitter Controlled diode

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ACTIVE / SYNCHRONOUS RECTIFIER

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N-Channel Enhancement Mode MOSFET

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N-Channel Enhancement Mode MOSFET

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