P-Channel Enhancement Mode

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isc N-Channel MOSFET Transistor

FEATURES ·Drain Current –ID=-36A@ TC=25℃ ·Drain Source Voltage- : VDSS=-150V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 0.09Ω(Max)@VGS= -10V ·100 avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION ·motor drive, DC-DC

P-Channel QFET® MOSFET -150 V, -36 A, 90 mΩ

Features -36 A, -150 V, RDS(on) = 90 mΩ (Max) @VGS = -10 V, ID = -18 A Low Gate Charge (Typ. 81 nC) Low Crss (Typ. 110 pF) 100% Avalanche Tested 175°C Maximum Junction Temperature Rating Description This P-Channel enhancement mode power MOSFET is produced using Fairchild Semiconducto

150V P-Channel MOSFET

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150V P-Channel MOSFET

文件：658.67 Kbytes Page：8 Pages

150V P-Channel MOSFET

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