Features

-36 A, -150 V, RDS(on) = 90 mΩ (Max) @VGS = -10 V, ID = -18 A

Low Gate Charge (Typ. 81 nC)

Low Crss (Typ. 110 pF)

100% Avalanche Tested

175°C Maximum Junction Temperature Rating

Description

This P-Channel enhancement mode power MOSFET is

produced using Fairchild Semiconductor’s proprietary planar

stripe and DMOS technology. This advanced MOSFET

technology has been especially tailored to reduce on-state

resistance, and to provide superior switching performance and

high avalanche energy strength. These devices are suitable for

switched mode power supplies, audio amplifier, DC motor

control, and variable switching power applications.