丝印代码：FQA36P15；P-Channel QFET® MOSFET -150 V, -36 A, 90 mΩ

Features -36 A, -150 V, RDS(on) = 90 mΩ (Max) @VGS = -10 V, ID = -18 A Low Gate Charge (Typ. 81 nC) Low Crss (Typ. 110 pF) 100% Avalanche Tested 175°C Maximum Junction Temperature Rating Description This P-Channel enhancement mode power MOSFET is produced using Fairchild Semiconducto

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current –ID=-36A@ TC=25℃ ·Drain Source Voltage- : VDSS=-150V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 0.09Ω(Max)@VGS= -10V ·100 avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION ·motor drive, DC-DC

功率 MOSFET，P 沟道，QFET®，-150 V，-36 A，90 mΩ，TO-3P

该 P 沟道增强型功率 MOSFET 产品采用飞兆半导体的专有平面条形和 DMOS 技术生产。这种先进的 MOSFET 技术已专门定制用来降低导通电阻，并提供卓越的开关性能和较高的雪崩能量强度。这些器件适用于开关模式电源、音频放大器、直流电机控制和可变开关电源应用。 •-36A, -150V, RDS(on)= 90mΩ（最大值）@VGS = -10 V, ID = -18A栅极电荷低（典型值：81nC)\n•低 Crss（典型值110pF)\n•100% 经过雪崩击穿测试\n•175°C最大结温额定值\"\n• 175°C Maximum Junction Temperature Rating;

150V P-Channel MOSFET

文件：658.67 Kbytes Page：8 Pages

150V P-Channel MOSFET

文件：658.67 Kbytes Page：8 Pages

150V P-Channel MOSFET

文件：869.64 Kbytes Page：9 Pages

P-Channel QFET® MOSFET -150 V, -36 A, 90 mΩ

Features -36 A, -150 V, RDS(on) = 90 mΩ (Max) @VGS = -10 V, ID = -18 A Low Gate Charge (Typ. 81 nC) Low Crss (Typ. 110 pF) 100% Avalanche Tested 175°C Maximum Junction Temperature Rating Description This P-Channel enhancement mode power MOSFET is produced using Fairchild Semiconducto

150V P-Channel MOSFET

文件：869.64 Kbytes Page：9 Pages

150V P-Channel MOSFET

文件：869.64 Kbytes Page：9 Pages

P-Channel Enhancement Mode

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P-Channel Enhancement Mode Avalanche Rated

文件：180.41 Kbytes Page：6 Pages