位置：首页 > IC中文资料第12677页 > IXTQ200N085T
| 型号 | 功能描述 | 生产厂家&企业 | LOGO | 操作 |
|---|---|---|---|---|
IXTQ200N085T | isc N-Channel MOSFET Transistor 文件：301.31 Kbytes Page：2 Pages | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 |  |   |
IXTQ200N085T | TrenchMV Power MOSFET 文件：211.28 Kbytes Page：5 Pages | IXYS IXYS Corporation |  | |
N-Channel Enhancement Mode Avalanche Rated TrenchMV Power MOSFET N-Channel Enhancement Mode Avalanche Rated Features • Ultra-low On Resistance • Unclamped Inductive Switching (UIS) rated • Low package inductance - easy to drive and to protect • 175 ° C Operating Temperature Advantages • Easy to mount • Space savings • High p | IXYS IXYS Corporation | | | |
isc N-Channel MOSFET Transistor • FEATURES • Static drain-source on-resistance: RDS(on) ≤ 5.0mΩ@VGS=10V • Fully characterized avalanche voltage and current • 100 avalanche tested • Minimum Lot-to-Lot variations for robust device performance and reliable operation • APPLICATION • DC/DC Converters • High Current Swi | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 | | | |
N-Channel Enhancement Mode Avalanche Rated TrenchMV Power MOSFET N-Channel Enhancement Mode Avalanche Rated Features • Ultra-low On Resistance • Unclamped Inductive Switching (UIS) rated • Low package inductance - easy to drive and to protect • 175 ° C Operating Temperature Advantages • Easy to mount • Space savings • High p | IXYS IXYS Corporation | | | |
isc N-Channel MOSFET Transistor FEATURES ·Drain Current –ID=200A@ TC=25℃ ·Drain Source Voltage- : VDSS=85V(Min) ·Static Drain-Source On-Resistance : RDS(on) =5.0mΩ(Max)@VGS= 10V ·100 avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION ·motor drive, DC-DC conv | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 | | | |
isc N-Channel MOSFET Transistor 文件：295.62 Kbytes Page：2 Pages | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 | | |
IXTQ200N085T产品属性
- 类型
描述
- 型号
IXTQ200N085T
- 功能描述
MOSFET 200 Amps 85V 5.0 Rds
- RoHS
否
- 制造商
STMicroelectronics
- 晶体管极性
N-Channel
- 汲极/源极击穿电压
650 V
- 闸/源击穿电压
25 V
- 漏极连续电流
130 A 电阻汲极/源极
- RDS（导通）
0.014 Ohms
- 配置
Single
- 安装风格
Through Hole
- 封装/箱体
Max247
- 封装
Tube
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
IXYS |
23+ |
TO-3P |
50000 |
全新原装正品现货,支持订货 |
|||
IXYS |
三年内 |
1983 |
只做原装正品 |
||||
IXYS |
20+ |
TO-3P |
36900 |
原装优势主营型号-可开原型号增税票 |
|||
IXYS |
2447 |
TO-3P |
105000 |
30个/管一级代理专营品牌!原装正品,优势现货,长期 |
|||
IXYS |
23+ |
TO-3P |
2250 |
正规渠道,只有原装! |
|||
IXYS/艾赛斯 |
23+ |
TO-3P |
50000 |
全新原装正品现货,支持订货 |
|||
IXYS/艾赛斯 |
2022+ |
TO-3P |
30000 |
进口原装现货供应,原装 假一罚十 |
|||
IXYS/艾赛斯 |
2023+ |
TO-3P |
1350 |
全新原装正品,优势价格 |
|||
IXYS |
21+ |
TO-3P |
1496 |
只做原装,绝对现货,原厂代理商渠道,欢迎电话微信查 |
|||
IXYS/艾赛斯 |
12+ |
TO-3P |
30140 |
进口原管现货/30 |
IXTQ200N085T芯片相关品牌
IXTQ200N085T规格书下载地址
IXTQ200N085T参数引脚图相关
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IXTQ200N085T数据表相关新闻
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2018-12-28
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