N-Channel Enhancement Mode

High Current MegaMOS™ FET N-Channel Enhancement Mode Features • Low RDS (on) HDMOSTM process • Rugged polysilicon gate cell structure • International standard package • Fast switching times Applications • Motor controls • DC choppers • Switched-mode power supplies Advantages • Easy to

isc N-Channel MOSFET Transistor

• FEATURES • Drain Source Voltage- : VDSS= 150V(Min) • Static drain-source on-resistance : RDS(on) ≤ 16mΩ@VGS=10V • 100 avalanche tested • Minimum Lot-to-Lot variations for robust device performance and reliable operation • APPLICATION • DC/DC Converters • High Current Switching Application

N-Channel: Standard Power MOSFETs

N-Channel Enhancement Mode Field Effect Transistor

FEATURES Super high dense cell design for extremely low RDS(ON). High power and current handing capability. RoHS compliant.

N-Channel Enhancement Mode Field Effect Transistor

FEATURES Super high dense cell design for extremely low RDS(ON). High power and current handing capability. RoHS compliant.

N-Channel Enhancement Mode Field Effect Transistor

FEATURES Super high dense cell design for extremely low RDS(ON). High power and current handing capability. RoHS compliant.

N-Ch 150V Fast Switching MOSFETs

General Description Advanced Trench MOS Technology Low Gate Charge Low RDS(ON) 100 EAS Guaranteed Green Device Available Applications Load Switch LED Applications Networking Applications Quick Charger

N-Ch 150V Fast Switching MOSFETs

General Description ⚫ Advanced Trench MOS Technology ⚫ Low Gate Charge ⚫ Low RDS(ON) ⚫ 100 EAS Guaranteed ⚫ Green Device Available Applications ⚫ Load Switch ⚫ LED Applications ⚫ Networking Applications ⚫ Quick Charger