N-Channel Power MOSFET

Description These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. Features • 90A, 150V, RDS(on) = 0.018Ω @VGS = 10 V • Low gate charge (typical 220 nC) • Low Crss (typical 200 pF) • Fast switching • 1

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current -ID=90A@ TC=25℃ ·Drain Source Voltage -VDSS=150V(Min) ·Static Drain-Source On-Resistance -RDS(on) =0.018Ω(Max)@VGS= 10V DESCRIPTION ·Motor drive, DC-DC converter, power switch and solenoid drive.

MOSFET N-CH 150V 90A TO-247

N-Channel Power MOSFET

文件：1.0998 Mbytes Page：10 Pages

N-Channel Power MOSFET

文件：1.0998 Mbytes Page：10 Pages

N-Channel Enhancement Mode Field Effect Transistor

FEATURES Super high dense cell design for extremely low RDS(ON). High power and current handing capability. RoHS compliant.

N-Channel Enhancement Mode Field Effect Transistor

FEATURES Super high dense cell design for extremely low RDS(ON). High power and current handing capability. RoHS compliant.

N-Channel Enhancement Mode Field Effect Transistor

FEATURES Super high dense cell design for extremely low RDS(ON). High power and current handing capability. RoHS compliant.

N-Ch 150V Fast Switching MOSFETs

General Description Advanced Trench MOS Technology Low Gate Charge Low RDS(ON) 100 EAS Guaranteed Green Device Available Applications Load Switch LED Applications Networking Applications Quick Charger

N-Ch 150V Fast Switching MOSFETs

General Description ⚫ Advanced Trench MOS Technology ⚫ Low Gate Charge ⚫ Low RDS(ON) ⚫ 100 EAS Guaranteed ⚫ Green Device Available Applications ⚫ Load Switch ⚫ LED Applications ⚫ Networking Applications ⚫ Quick Charger