丝印代码：FQA90N15；N-Channel QFET® MOSFET 150 V, 90 A, 18 mΩ

Description These N-Channel enhancement mode power field effect transistors are produced using ON Semiconductor’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and wi

功率 MOSFET，N 沟道，QFET®，150V，90A，18mΩ，TO-3P

该 N 沟道增强型功率 MOSFET 产品采用飞兆半导体®的专有平面条形和 DMOS 技术生产。 这种先进的 MOSFET 技术已专门定制用来降低导通电阻，并提供卓越的开关性能和较高的雪崩能量强度。 这些设备适用于开关模式电源、音频放大器、直流电机控制和可变开关电源应用。 • \"\n•90A，150V，RDS(on)= 18mΩ（最大值）（VGS = 10 V且ID = 45A时）\n•低栅极电荷（典型值 220nC)\n•低 Crss（典型值 200pF)\n•100% 经过雪崩击穿测试;

N-Channel Power MOSFET

Description These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. Features • 90A, 150V, RDS(on) = 0.018Ω @VGS = 10 V • Low gate charge (typical 220 nC) • Low Crss (typical 200 pF) • Fast switching • 1

N-Channel Power MOSFET

Description These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. Features • 90A, 150V, RDS(on) = 0.018Ω @VGS = 10 V • Low gate charge (typical 220 nC) • Low Crss (typical 200 pF) • Fast switching • 1

N-Channel Power MOSFET

文件：1.0998 Mbytes Page：10 Pages

N-Channel Power MOSFET

文件：1.0998 Mbytes Page：10 Pages

N-Channel Power MOSFET

Description These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. Features • 90A, 150V, RDS(on) = 0.018Ω @VGS = 10 V • Low gate charge (typical 220 nC) • Low Crss (typical 200 pF) • Fast switching • 1

N-Channel Power MOSFET

文件：1.0998 Mbytes Page：10 Pages