High Current MegaMOS™ FET

N-Channel Enhancement Mode

Features

• Low RDS (on) HDMOSTM process

• Rugged polysilicon gate cell structure

• International standard package

• Fast switching times

Applications

• Motor controls

• DC choppers

• Switched-mode power supplies

Advantages

• Easy to mount with one screw

(isolated mounting screw hole)

• Space savings

• High power density