Standard Power MOSFET

Standard Power MOSFET N-Channel Enhancement Mode Features • International standard packages • Low RDS (on) HDMOSTM process • Rugged polysilicon gate cell structure • Low package inductance (

isc N-Channel MOSFET Transistor

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Standard Power MOSFET

Standard Power MOSFET N-Channel Enhancement Mode Features • International standard packages • Low RDS (on) HDMOSTM process • Rugged polysilicon gate cell structure • Low package inductance (

isc N-Channel MOSFET Transistor

文件：372.5 Kbytes Page：2 Pages

6.2 Amps, 900 Volts N-CHANNEL POWER MOSFET

DESCRIPTION The UTC 6N90 is an N-channel enhancement mode Power FET using UTC’s advanced technology to provide costumers with planar stripe and DMOS technology. This technology allows a minimum on-state resistance and superior switching performance. It also can withstand high energy pulse in the

N-Channel Power MOSFET

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6.2A, 900V N-CHANNEL POWER MOSFET

文件：203.47 Kbytes Page：5 Pages

900V N-Channel MOSFET

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N-CHANNEL POWER MOSFET

文件：251.69 Kbytes Page：5 Pages