6.2 Amps, 900 Volts N-CHANNEL POWER MOSFET

DESCRIPTION The UTC 6N90 is an N-channel enhancement mode Power FET using UTC’s advanced technology to provide costumers with planar stripe and DMOS technology. This technology allows a minimum on-state resistance and superior switching performance. It also can withstand high energy pulse in the

6.2A, 900V N-CHANNEL POWER MOSFET

• RDS(on) = 2.3Ω @VGS = 10 V \n• 100% avalanche tested \n• Improved dv/dt capability;

N-Channel Power MOSFET

文件：403.88 Kbytes Page：8 Pages

6.2A, 900V N-CHANNEL POWER MOSFET

文件：203.47 Kbytes Page：5 Pages

丝印代码：6N90K5；N-channel 900 V, 0.91 廓 typ., 6 A MDmesh??K5 Power MOSFET in a TO-220FP package

文件：716.5 Kbytes Page：13 Pages

丝印代码：6N90K5；N-channel 900 V, 0.91 廓 typ., 6 A MDmesh??K5 Power MOSFET in a TO-220 package

文件：733.91 Kbytes Page：13 Pages

6.2 Amps, 900 Volts N-CHANNEL POWER MOSFET

DESCRIPTION The UTC 6N90 is an N-channel enhancement mode Power FET using UTC’s advanced technology to provide costumers with planar stripe and DMOS technology. This technology allows a minimum on-state resistance and superior switching performance. It also can withstand high energy pulse in the

6.2 Amps, 900 Volts N-CHANNEL POWER MOSFET

DESCRIPTION The UTC 6N90 is an N-channel enhancement mode Power FET using UTC’s advanced technology to provide costumers with planar stripe and DMOS technology. This technology allows a minimum on-state resistance and superior switching performance. It also can withstand high energy pulse in the

6.2 Amps, 900 Volts N-CHANNEL POWER MOSFET

DESCRIPTION The UTC 6N90 is an N-channel enhancement mode Power FET using UTC’s advanced technology to provide costumers with planar stripe and DMOS technology. This technology allows a minimum on-state resistance and superior switching performance. It also can withstand high energy pulse in the

6.2 Amps, 900 Volts N-CHANNEL POWER MOSFET

DESCRIPTION The UTC 6N90 is an N-channel enhancement mode Power FET using UTC’s advanced technology to provide costumers with planar stripe and DMOS technology. This technology allows a minimum on-state resistance and superior switching performance. It also can withstand high energy pulse in the

6.2 Amps, 900 Volts N-CHANNEL POWER MOSFET

DESCRIPTION The UTC 6N90 is an N-channel enhancement mode Power FET using UTC’s advanced technology to provide costumers with planar stripe and DMOS technology. This technology allows a minimum on-state resistance and superior switching performance. It also can withstand high energy pulse in the

6.2 Amps, 900 Volts N-CHANNEL POWER MOSFET

DESCRIPTION The UTC 6N90 is an N-channel enhancement mode Power FET using UTC’s advanced technology to provide costumers with planar stripe and DMOS technology. This technology allows a minimum on-state resistance and superior switching performance. It also can withstand high energy pulse in the

6.2A, 900V N-CHANNEL POWER MOSFET

The UTC 6N90Z is an N-channel enhancement mode power MOSFET   using UTC’s advanced technology to provide costumers with planar stripe and DMOS technology. This technology allows a minimum on-state resistance and superior switching performance. Italso can withstand high energy pulse in the avalanche • RDS(ON) = 2.3Ω @VGS = 10 V \n• 100% avalanche tested \n• Improved dv/dt capability;

6.2A, 900V N-CHANNEL POWER MOSFET

文件：203.47 Kbytes Page：5 Pages

N-CHANNEL POWER MOSFET

文件：283.12 Kbytes Page：8 Pages

900V N-Channel MOSFET

文件：789.54 Kbytes Page：9 Pages

N-CHANNEL POWER MOSFET

文件：283.12 Kbytes Page：8 Pages

N-CHANNEL POWER MOSFET

文件：283.12 Kbytes Page：8 Pages

6.2A, 900V N-CHANNEL POWER MOSFET

文件：203.47 Kbytes Page：5 Pages

6.2A, 900V N-CHANNEL POWER MOSFET

文件：203.47 Kbytes Page：5 Pages

N-CHANNEL POWER MOSFET

文件：283.12 Kbytes Page：8 Pages

N-CHANNEL POWER MOSFET

文件：283.12 Kbytes Page：8 Pages

6.2A, 900V N-CHANNEL POWER MOSFET

文件：203.47 Kbytes Page：5 Pages

N-CHANNEL POWER MOSFET

文件：283.12 Kbytes Page：8 Pages

6.2A, 900V N-CHANNEL POWER MOSFET

文件：203.47 Kbytes Page：5 Pages

N-CHANNEL POWER MOSFET

文件：283.12 Kbytes Page：8 Pages

N-CHANNEL POWER MOSFET

文件：283.12 Kbytes Page：8 Pages

6.2A, 900V N-CHANNEL POWER MOSFET

文件：203.47 Kbytes Page：5 Pages

6.2A, 900V N-CHANNEL POWER MOSFET

文件：203.47 Kbytes Page：5 Pages

N-CHANNEL POWER MOSFET

文件：283.12 Kbytes Page：8 Pages

N-Channel MOSFET uses advanced trench technology

文件：1.1216 Mbytes Page：4 Pages

N-CHANNEL POWER MOSFET

文件：251.69 Kbytes Page：5 Pages

N-CHANNEL POWER MOSFET

文件：251.69 Kbytes Page：5 Pages

N-CHANNEL POWER MOSFET

文件：251.69 Kbytes Page：5 Pages

N-CHANNEL POWER MOSFET

文件：251.69 Kbytes Page：5 Pages

N-CHANNEL POWER MOSFET

文件：251.69 Kbytes Page：5 Pages

900V N-Channel MOSFET

General Description These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withs

900V N-Channel MOSFET

Features • 4.5A, 900V, RDS(on) = 1.9Ω @VGS = 10 V • Low gate charge ( typical 40 nC) • Low Crss ( typical 17 pF) • Fast switching • 100 avalanche tested • Improved dv/dt capability

900V N-Channel MOSFET

General Description These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology is especially tailored to minimize on-state resistance, provide superior switching performance, and withstand a

900V N-Channel MOSFET

General Description These N-Channel enhancement mode power field effect transistors are product using Fairchilds proprietary, planar stripe, DMOS technology. This advance technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstan

Advanced Power MOSFET

文件：648.96 Kbytes Page：7 Pages