位置：首页 > IC中文资料第140页 > IXTH6N90A
| 型号 | 功能描述 | 生产厂家 企业 | LOGO | 操作 |
|---|---|---|---|---|
IXTH6N90A | Standard Power MOSFET Standard Power MOSFET N-Channel Enhancement Mode Features • International standard packages • Low RDS (on) HDMOSTM process • Rugged polysilicon gate cell structure • Low package inductance ( | IXYS 艾赛斯 |   | |
IXTH6N90A | isc N-Channel MOSFET Transistor 文件：372.5 Kbytes Page：2 Pages | ISC 无锡固电 | | |
6.2 Amps, 900 Volts N-CHANNEL POWER MOSFET DESCRIPTION The UTC 6N90 is an N-channel enhancement mode Power FET using UTC’s advanced technology to provide costumers with planar stripe and DMOS technology. This technology allows a minimum on-state resistance and superior switching performance. It also can withstand high energy pulse in the | UTC 友顺 | | ||
N-Channel Power MOSFET 文件：403.88 Kbytes Page：8 Pages | NELLSEMI 尼尔半导体 | | ||
6.2A, 900V N-CHANNEL POWER MOSFET 文件：203.47 Kbytes Page：5 Pages | UTC 友顺 | | ||
900V N-Channel MOSFET 文件：789.54 Kbytes Page：9 Pages | FairchildFairchild Semiconductor 仙童半导体飞兆/仙童半导体公司 | | ||
N-CHANNEL POWER MOSFET 文件：251.69 Kbytes Page：5 Pages | UTC 友顺 | |
IXTH6N90A产品属性
- 类型
描述
- 型号
IXTH6N90A
- 功能描述
MOSFET 6 Amps 900V 1.4 Rds
- RoHS
否
- 制造商
STMicroelectronics
- 晶体管极性
N-Channel
- 汲极/源极击穿电压
650 V
- 闸/源击穿电压
25 V
- 漏极连续电流
130 A 电阻汲极/源极
- RDS（导通）
0.014 Ohms
- 配置
Single
- 安装风格
Through Hole
- 封装/箱体
Max247
- 封装
Tube
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
IXYS |
25+23+ |
TO |
69598 |
绝对原装正品现货,全新深圳原装进口现货 |
|||
IXFH |
9118 |
35 |
公司优势库存 热卖中! |
||||
IXYS |
原厂封装 |
9800 |
原装进口公司现货假一赔百 |
||||
I |
23+ |
TO-247AD |
6000 |
原装正品，支持实单 |
|||
IXYS |
24+ |
TO |
4000 |
原装原厂代理 可免费送样品 |
|||
N/A |
23+ |
TO-3P |
8000 |
只做原装现货 |
|||
N/A |
23+ |
TO-3P |
7000 |
||||
IXYS |
20+ |
TO-247 |
36900 |
原装优势主营型号-可开原型号增税票 |
|||
IXYS |
23+ |
TO-3P |
65480 |
||||
IXYS |
93+ |
TO |
223 |
一级代理,专注军工、汽车、医疗、工业、新能源、电力 |
IXTH6N90A规格书下载地址
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2018-12-28
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