MegaMOS FET

MegaMOS™ FET N-Channel Enhancement Mode Features • International standard package JEDEC TO-247 AD • Low RDS (on) HDMOSTM process • Rugged polysilicon gate cell structure • High commutating dv/dt rating • Fast switching times Applications • Switch-mode and resonant-mode power supplies • M

isc N-Channel MOSFET Transistor

文件：380.75 Kbytes Page：2 Pages

N-Channel: Standard Power MOSFETs

N-Channel Enhancement Mode

N-Channel Enhancement Mode Features ● Designed for linear operation ● International standard packages ● Unclamped Inductive Switching (UIS) rated. ● Molding epoxies meet UL 94 V-0 flammability classification ● Integrated gate resistor for easy paralleling ● Guaranteed FBSOA at 75°C Applica

isc N-Channel MOSFET Transistor

• FEATURES • With TO-247 packaging • With low gate drive requirements • Low switching loss • Low on-state resistance • Easy to drive • 100 avalanche tested • Minimum Lot-to-Lot variations for robust device performance and reliable operation • APPLICATIONS • Switching applications

Linear L2TM Power MOSFET with extended FBSOA N-Channel Enhancement Mode

N-Channel Enhancement Mode Features ● Designed for linear operation ● International standard packages ● Unclamped Inductive Switching (UIS) rated. ● Molding epoxies meet UL 94 V-0 flammability classification ● Integrated gate resistor for easy paralleling ● Guaranteed FBSOA at 75°C Applica

N-Channel MOSFET Transistor

FEATURES · Drain Current -ID= 30A@ TC=25℃ · Drain Source Voltage -VDSS= 500V(Min) · Static Drain-Source On-Resistance -RDS(on) = 215mΩ(Max) @ VGS= 10V APPLICATIONS ·Current Regulators ·Solid State Circuit Breakers

N-Channel Enhancement Mode Avalanche Rated

N-Channel Enhancement Mode Avalanche Rated Features • International standard packages • Unclamped Inductive Switching (UIS) rated • Low package inductance - easy to drive and to protect Advantages • Easy to mount • Space savings • High power density

N-Channel Power MOSFET

文件：159.3 Kbytes Page：6 Pages

isc N-Channel MOSFET Transistor

文件：387.84 Kbytes Page：2 Pages

N通道线性MOSFET

N-Channel Power MOSFET

文件：159.3 Kbytes Page：6 Pages

isc N-Channel MOSFET Transistor

文件：380.88 Kbytes Page：2 Pages

N通道标准 Polar™ MOSFET

N-Channel MOSFET

Applications: ●Adaptor ● Charger ●SMPS Features: ● RoHS Compliant ● Low ON Resistance ● Low Gate Charge ●Peak Current vs Pulse Width Curve ● Inductive Switching Curves

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current : ID= 30A@ TC=25℃ ·Drain Source Voltage : VDSS= 500V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 0.16Ω(Max) @ VGS= 10V ·100 avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION ·motor drive, DC-

HiPerFET Power MOSFETs

N-Channel Enhancement Mode High dv/dt, Low trr, HDMOSTM Family Features • International standard packages • Low RDS (on) HDMOSTM process • Rugged polysilicon gate cell structure • Unclamped Inductive Switching (UIS) rated • Low package inductance - easy to drive and to protect • Fast intrin

15TQ060

文件：326.02 Kbytes Page：2 Pages

THINKISEMI 24A,500V N-CHANNEL PLANAR STRIPE POWER MOSFETs

文件：2.44579 Mbytes Page：7 Pages