MegaMOS FET

MegaMOS™ FET N-Channel Enhancement Mode Features • International standard package JEDEC TO-247 AD • Low RDS (on) HDMOSTM process • Rugged polysilicon gate cell structure • High commutating dv/dt rating • Fast switching times Applications • Switch-mode and resonant-mode power supplies • M

isc N-Channel MOSFET Transistor

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N-Channel: Standard Power MOSFETs

N-Channel Enhancement Mode

N-Channel Enhancement Mode Features ● Designed for linear operation ● International standard packages ● Unclamped Inductive Switching (UIS) rated. ● Molding epoxies meet UL 94 V-0 flammability classification ● Integrated gate resistor for easy paralleling ● Guaranteed FBSOA at 75°C Applica

isc N-Channel MOSFET Transistor

• FEATURES • With TO-247 packaging • With low gate drive requirements • Low switching loss • Low on-state resistance • Easy to drive • 100 avalanche tested • Minimum Lot-to-Lot variations for robust device performance and reliable operation • APPLICATIONS • Switching applications

Linear L2TM Power MOSFET with extended FBSOA N-Channel Enhancement Mode

N-Channel Enhancement Mode Features ● Designed for linear operation ● International standard packages ● Unclamped Inductive Switching (UIS) rated. ● Molding epoxies meet UL 94 V-0 flammability classification ● Integrated gate resistor for easy paralleling ● Guaranteed FBSOA at 75°C Applica

N-Channel MOSFET Transistor

FEATURES · Drain Current -ID= 30A@ TC=25℃ · Drain Source Voltage -VDSS= 500V(Min) · Static Drain-Source On-Resistance -RDS(on) = 215mΩ(Max) @ VGS= 10V APPLICATIONS ·Current Regulators ·Solid State Circuit Breakers

N-Channel Enhancement Mode Avalanche Rated

N-Channel Enhancement Mode Avalanche Rated Features • International standard packages • Unclamped Inductive Switching (UIS) rated • Low package inductance - easy to drive and to protect Advantages • Easy to mount • Space savings • High power density

N-Channel Power MOSFET

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isc N-Channel MOSFET Transistor

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N通道线性MOSFET

N-Channel Power MOSFET

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N通道标准 Polar™ MOSFET

isc N-Channel MOSFET Transistor

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TMOS POWER FET 30 AMPERES 500 VOLTS RDS(on) = 0.150 OHM

ISOTOP TMOS E-FET Power Field Effect Transistor N–Channel Enhancement–Mode Silicon Gate This advanced TMOS E–FET is designed to withstand high energy in the avalanche mode and switch efficiently. This new energy design also offers a drain–to–source diode with fast recovery time. Designed for hig

TMOS POWER FET 30 AMPERES 500 VOLTS RDS(on) = 0.15 OHM

TMOS E-FET Power Field Effect Transistor N–Channel Enhancement–Mode Silicon Gate This advanced TMOS power FET is designed to withstand high energy in the avalanche and commutation modes. This new energy efficient design also offers a drain–to–source diode with fast recovery time. Designed for hi

TMOS POWER FET 30 AMPERES 500 VOLTS RDS(on) = 0.15 OHM

TMOS E-FET Power Field Effect Transistor N–Channel Enhancement–Mode Silicon Gate This advanced TMOS power FET is designed to withstand high energy in the avalanche and commutation modes. This new energy efficient design also offers a drain–to–source diode with fast recovery time. Designed for hi

HiPerFET Power MOSFETs ISOPLUS247

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HiPerFET Power MOSFETs ISOPLUS247

文件：92.65 Kbytes Page：4 Pages