| 型号 | 功能描述 | 生产厂家 企业 | LOGO | 操作 |
|---|---|---|---|---|
MTE30N50E | TMOS POWER FET 30 AMPERES 500 VOLTS RDS(on) = 0.150 OHM ISOTOP TMOS E-FET Power Field Effect Transistor N–Channel Enhancement–Mode Silicon Gate This advanced TMOS E–FET is designed to withstand high energy in the avalanche mode and switch efficiently. This new energy design also offers a drain–to–source diode with fast recovery time. Designed for hig | MOTOROLA 摩托罗拉 |   | |
MTE30N50E | TMOS POWER FET 30 AMPERES 500 VOLTS RDS(on) = 0.150 OHM | ETC 知名厂家 | ETC | |
TMOS POWER FET 30 AMPERES 500 VOLTS RDS(on) = 0.15 OHM TMOS E-FET Power Field Effect Transistor N–Channel Enhancement–Mode Silicon Gate This advanced TMOS power FET is designed to withstand high energy in the avalanche and commutation modes. This new energy efficient design also offers a drain–to–source diode with fast recovery time. Designed for hi | MOTOROLA 摩托罗拉 | | ||
TMOS POWER FET 30 AMPERES 500 VOLTS RDS(on) = 0.15 OHM TMOS E-FET Power Field Effect Transistor N–Channel Enhancement–Mode Silicon Gate This advanced TMOS power FET is designed to withstand high energy in the avalanche and commutation modes. This new energy efficient design also offers a drain–to–source diode with fast recovery time. Designed for hi | MOTOROLA 摩托罗拉 | | ||
HiPerFET Power MOSFETs ISOPLUS247 文件：92.65 Kbytes Page：4 Pages | IXYS 艾赛斯 | | ||
HiPerFET Power MOSFETs ISOPLUS247 文件：92.65 Kbytes Page：4 Pages | IXYS 艾赛斯 | |
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
ON |
专业模块 |
MODULE |
8513 |
模块原装主营-可开原型号增税票 |
|||
CYSTECH/全宇昕 |
2511 |
SOP-8 |
360000 |
电子元器件采购降本30%!原厂直采,砍掉中间差价 |
|||
26+ |
N/A |
82000 |
一级代理-主营优势-实惠价格-不悔选择 |
||||
on |
24+ |
N/A |
6980 |
原装现货,可开13%税票 |
|||
ON |
22+ |
SOT227 |
3000 |
原装正品,支持实单 |
|||
ON |
24+ |
30000 |
|||||
MARKTECH |
25+ |
光电元件 |
98 |
就找我吧!--邀您体验愉快问购元件! |
MTE30N50E规格书下载地址
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DdatasheetPDF页码索引
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