TMOS POWER FET 30 AMPERES 500 VOLTS RDS(on) = 0.150 OHM

ISOTOP TMOS E-FET Power Field Effect Transistor N–Channel Enhancement–Mode Silicon Gate This advanced TMOS E–FET is designed to withstand high energy in the avalanche mode and switch efficiently. This new energy design also offers a drain–to–source diode with fast recovery time. Designed for hig

TMOS POWER FET 30 AMPERES 500 VOLTS RDS(on) = 0.150 OHM

N-Channel MOSFET

Applications: ●Adaptor ● Charger ●SMPS Features: ● RoHS Compliant ● Low ON Resistance ● Low Gate Charge ●Peak Current vs Pulse Width Curve ● Inductive Switching Curves

HiPerFET Power MOSFETs

N-Channel Enhancement Mode High dv/dt, Low trr, HDMOSTM Family Features • International standard packages • Low RDS (on) HDMOSTM process • Rugged polysilicon gate cell structure • Unclamped Inductive Switching (UIS) rated • Low package inductance - easy to drive and to protect • Fast intrin

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current : ID= 30A@ TC=25℃ ·Drain Source Voltage : VDSS= 500V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 0.16Ω(Max) @ VGS= 10V ·100 avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION ·motor drive, DC-

15TQ060

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THINKISEMI 24A,500V N-CHANNEL PLANAR STRIPE POWER MOSFETs

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