isc N-Channel MOSFET Transistor

FEATURES ·Drain Current -ID= 30A@ TC=25℃ ·Drain Source Voltage -VDSS= 500V(Min) ·Static Drain-Source On-Resistance -RDS(on) = 160mΩ(Max)@VGS= 10V DESCRIPTION ·Motor drive, DC-DC converter, power switch and solenoid drive.

HiPerFET Power MOSFETs ISOPLUS247

HiPerFET Power MOSFETs ISOPLUS247

文件：92.65 Kbytes Page：4 Pages

HiPerFET Power MOSFETs ISOPLUS247

文件：92.65 Kbytes Page：4 Pages

TMOS POWER FET 30 AMPERES 500 VOLTS RDS(on) = 0.150 OHM

ISOTOP TMOS E-FET Power Field Effect Transistor N–Channel Enhancement–Mode Silicon Gate This advanced TMOS E–FET is designed to withstand high energy in the avalanche mode and switch efficiently. This new energy design also offers a drain–to–source diode with fast recovery time. Designed for hig

TMOS POWER FET 30 AMPERES 500 VOLTS RDS(on) = 0.15 OHM

TMOS E-FET Power Field Effect Transistor N–Channel Enhancement–Mode Silicon Gate This advanced TMOS power FET is designed to withstand high energy in the avalanche and commutation modes. This new energy efficient design also offers a drain–to–source diode with fast recovery time. Designed for hi

TMOS POWER FET 30 AMPERES 500 VOLTS RDS(on) = 0.15 OHM

TMOS E-FET Power Field Effect Transistor N–Channel Enhancement–Mode Silicon Gate This advanced TMOS power FET is designed to withstand high energy in the avalanche and commutation modes. This new energy efficient design also offers a drain–to–source diode with fast recovery time. Designed for hi