High Speed IGBT

High Speed IGBT Short Circuit SOA Capability Features ● International standard packages ● Short Circuit SOA capability ● High frequency IGBT ● New generation HDMOSTM process Applications ● AC motor speed control ● DC servo and robot drives ● DC choppers ● Uninterruptible power supplies

封装/外壳：TO-268-3，D³Pak（2 引线 + 接片），TO-268AA 包装：管件 描述：IGBT 600V 55A 200W TO268 分立半导体产品 晶体管 - UGBT、MOSFET - 单

Short Circuit Rated PT IGBTs

High Speed IGBT with Diode

Short Circuit SOA Capability Features • International standard packages: JEDEC TO-247, TO-264& TO-268 • Short Circuit SOA capability • Medium freqeuncy IGBT and anti-parallel FRED in one package • New generation HDMOSTM process Applications • AC motor speed control • DC servo

封装/外壳：TO-268-3，D³Pak（2 引线 + 接片），TO-268AA 包装：管件 描述：IGBT 600V 48A 250W TO268 分立半导体产品 晶体管 - UGBT、MOSFET - 单

Short Circuit Rated PT IGBTs

High Speed IGBT

High Speed IGBT Short Circuit SOA Capability Features ● International standard packages ● Short Circuit SOA capability ● High frequency IGBT ● New generation HDMOSTM process Applications ● AC motor speed control ● DC servo and robot drives ● DC choppers ● Uninterruptible power supplies

Insulated Gate Bipolar Transistor

Insulated Gate Bipolar Transistor N–Channel Enhancement–Mode Silicon Gate This Insulated Gate Bipolar Transistor (IGBT) uses an advanced termination scheme to provide an enhanced and reliable high voltage–blocking capability. Short circuit rated IGBT’s are specifically suited for applications re

Insulated Gate Bipolar Transistor with Anti-Parallel Diode

Insulated Gate Bipolar Transistor with Anti-Parallel Diode N–Channel Enhancement–Mode Silicon Gate This Insulated Gate Bipolar Transistor (IGBT) is co–packaged with a soft recovery ultra–fast rectifier and uses an advanced termination scheme to provide an enhanced and reliable high voltage–block

Short Circuit Rated IGBT

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Short Circuit Rated IGBT

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