isc N-Channel MOSFET Transistor

FEATURES ·Drain Current –ID=20A@ TC=25℃ ·Drain Source Voltage- : VDSS=1200V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 0.75Ω(Max)@VGS= 10V ·100 avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION ·motor drive, DC-DC co

N-Channel: Power MOSFETs with Fast Intrinsic Diode (HiPerFET™)

HiPerFET Power MOSFETs

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Polar Power MOSFET HiPerFET

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N通道HiPerFET

63A, 1200V, NPT Series N-Channel IGBT with Anti-Parallel Hyperfast Diode

63A, 1200V, NPT Series N-Channel IGBT with Anti-Parallel Hyperfast Diode The HGTG20N120CND is a Non-Punch Through (NPT) IGBT design. This is a new member of the MOS gated high voltage switching IGBT family. IGBTs combine the best features of MOSFETs and bipolar transistors. This device has

General purpose inverters

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Insulated-Gate Bipolar Transistor in a TO-3P Plastic Package

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1200V, 20A Trench IGBT

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1200V, 20A Trench IGBT

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