PolarHV HiperFET Power MOSFET

PolarHV™ HiperFET Power MOSFET N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode Features • International Standard Packages • Avalanche Rated • Fast Intrinsic Diode • Low Package Inductance Advantages • High Power Density • Easy to Mount • Space Savings Applications • S

N-Channel MOSFET Transistor

FEATURES · Drain Current -ID= 16A@ TC=25℃ · Drain Source Voltage -VDSS=500V(Min) · Static Drain-Source On-Resistance -RDS(on) = 400mΩ(Max)@VGS= 10V DESCRIPTION · DC-DC Converters · Motor Drive · Power Switch

N通道HiPerFET

Power MOSFET

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N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Rectifier

Polar3 ™ HiPerFET™ Power MOSFET N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Rectifier Features • International Standard Packages • Fast Intrinsic Rectifier • Avalanche Rated • Low RDS(ON) and QG • Low Package Inductance Advantages • High Power Density • Easy to Mount • Sp

16 Amps, 500 Volts N-CHANNEL POWER MOSFET

DESCRIPTION The UTC 16N50 is an N-channel mode power MOSFET using UTC’s advanced technology to provide customers with planar stripe and DMOS technology. This technology allows a minimum on-state resistance and superior switching performance. It also can withstand high energy pulse in the avalan

500V, 16A N-Channel MOSFET

General Description The AOT16N50 & AOTF16N50 have been fabricated using an advanced high voltage MOSFET process that is designed to deliver high levels of performance and robustness in popular AC-DC applications. By providing low RDS(on), Ciss and Crss along with guaranteed avalanche capabili

16A 500V N-channel enhanced field effect transistor

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16A竊?00V N-CHANNEL MOSFET

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isc N-Channel MOSFET Transistor

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